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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFE 44N60 VDSS ID25 RDS(on) = = = 600 V 41 A 130 m D trr 250 ns G S S Maximum Ratings 600 600 20 30 41 176 44 60 3 5 500 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C C V~ V~ ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features *Conforms to SOT-227B outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 4.5 200 TJ = 25C TJ = 125C V V nA * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls power supplies VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 3 mA V DS = VGS, ID = 8 mA V GS = 20 VDC, VDS = 0 V DS = VDSS V GS = 0 V V GS = 10 V, ID = IT Note1 100 A 2 mA 130 m Advantages * Low cost * Easy to mount * Space savings * High power density (c) 2002 IXYS All rights reserved 98894 (1/02) IXFE 44N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 8900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 330 42 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External), 55 110 45 330 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 60 65 0.25 0.07 45 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT, Note:1 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note:1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 44 176 1.3 250 1.4 8 A A V ns C A Please see IXFN44N60 data sheet for characteristic curves. IF = 50A, -di/dt = 100 A/s, VR = 100 V Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. Test current IT = 22A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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