 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BS809 DMOS Transistors (N-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S09 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at TSB = 50 C Power Dissipation at TSB = 50 C Junction Temperature Storage Temperature Range 1) Value 400 400 20 100 3101) 150 -65 to +150 Unit V V V mA mW C C VDSS VDGS VGS ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.)at VGS = 0, IF = 0.3 A, Tj = 25 C IF VF Value 300 1.0 Unit mA V 4/98 BS809 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at ID = 100 A, VGS = 0 V Gate-Body Leakage Current, Forward at VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at VGSR = 20 V, VDS = 0 V Drain Cutoff Current at VDS = 400 V, VGS = 0 V Gate-Source Threshold Voltage at VGS = VDS, ID = 250 A Drain-Source ON Resistance at VGS = 5 V, ID = 100 mA Capacitances at VDS = 25 V, VGS = 0 V, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at VGS = 10 V, VDS = 10 V, RD = 100 Turn-On Time Turn-Off Time Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air 1) Min. 400 - - - 1 - Typ. 430 - - - 1.5 18 Max. - 100 100 500 2.5 22 Unit V nA nA nA V V(BR)DSS IGSSF IGSSR IDSS VGS(th) RDS(on) CiSS COSS CrS - - - 80 20 10 - - - pF pF pF ton toff RthSB RthJA - - 10 50 - - 3201) ns ns - - 4501) K/W Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) |
Price & Availability of BS809
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |