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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF548 UHF push-pull power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability * Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262A2 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source
5 3
Top view
halfpage
BLF548
PIN CONFIGURATION
1
2
d2 g2 g1 s d1
MBB157
5 4
MSB008
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 150 Gp (dB) > 10 D (%) > 50
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C; total device; both sections equally loaded CONDITIONS - - - - -65 - MIN.
BLF548
MAX. 65 20 15 330 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 330 W; total device; both sections equally loaded total device; both sections equally loaded THERMAL RESISTANCE 0.5 K/W 0.15 K/W
102 handbook, halfpage ID (A)
MRA997
MRA532
handbook, halfpage P
400 350
tot (W)
(2)
300
(2)
(1)
250 200 150 100 50
(1)
10
1
1
10
VDS (V)
102
0
0
20
40
60
80
100 120 Th (oC)
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 40 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 160 mA; VDS = 10 V ID = 4.8 A; VDS = 10 V ID = 4.8 A; VGS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 2.4 - 16 - - - TYP. - - - - 3.5 0.25 20 105 90 25
BLF548
MAX. - 0.5 1 4 - 0.3 - - - -
UNIT V mA A V S A pF pF pF
3 handbook, halfpage TC (mV/K) 2 1 0 -1 -2 -3 -4 10-2
MRA524
handbook, halfpage
25
MRA529
ID (A) 20
15
10
5
10-1
1
ID (A)
10
0 0 4 8 12 VGS (V) 16
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
handbook, halfpage
0.5
MRA522
RDS(on) ()
handbook, halfpage
400
MRA525
C (pF) 300
0.4
0.3 200 0.2 Cis 100 0.1 Cos
0 0 40 80 Tj (oC) 120
0 0 10 20 VDS (V) 30
ID = 4.8 A; VGS = 10 V.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
handbook, halfpage
100 Crs (pF) 80
MRA521
60
40
20
0
0
10
20
VDS (V)
30
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a common source, push-pull, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 IDQ (mA) 2 x 160 PL (W) 150 Gp (dB) > 10 typ. 11
BLF548
D (%) > 50 typ. 55
Ruggedness in class-B operation The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
handbook, halfpage
20 GP (dB) 16
MRA527
100
D
(%) 80 GP
handbook, halfpage
200
MRA531
PL (W) 160
12
60
120
8
D
40
80
4
20
40
0 0 50 100 150 PL (W)
0 200
0
0
10
20
PIN (W)
30
Class-B operation; VDS = 28 V; IDQ = 2 x 160 mA; f = 500 MHz; ZL = 1.1 + j0.6 (per section).
Class-B operation; VDS = 28 V; IDQ = 2 x 160 mA; f = 500 MHz; ZL = 1.1 + j0.6 (per section).
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
October 1992
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
+VD C12 C13 R1 Vbias R2 L10 R7 L11
50 input
,,, ,,,
C7 C8 C14 R3 L12 L1 L2 C1 L4 L6 DUT L8 L13 L18 L20 C23 L22 C19 C21 L23 C3 C4 C5 C6 C9 C22 L3 C18 C20 L24 C2 L5 L7 L9 L14 L19 L21 C24 R4 C10 C15 L15
MBC232
50 output
C11
L16 Vbias R5 R6 C17
R8
L17
C16 +VD
f = 500 MHz.
List of components (see class-B test circuit) COMPONENT C1, C2 C3 C4 C5 C6, C21, C22 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 2) film dielectric trimmer VALUE 22 pF 16 pF 2 to 9 pF 27 pF 2 to 18 pF 390 pF 100 nF 2 x 56 pF in series 2222 852 47104 2222 809 09006 2222 809 09005 DIMENSIONS CATALOGUE NO.
C7, C10, C14, C15 multilayer ceramic chip capacitor (note 1) C8, C11, C12, C17 C9 multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 3)
October 1992
agewidth
Fig.11 Test circuit for class-B operation.
7
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
COMPONENT C13, C16 C18 C19 C20 C23, C24 L1, L3, L22, L24 L2, L23 L4, L5 L6, L7 L8, L9 L10, L11, L16, L17 L12, L15
DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 1) stripline (note 4) semi-rigid cable (note 5) stripline (note 4) stripline (note 4) stripline (note 4) grade 3B Ferroxcube wideband RF choke 1 turn enamelled 1.5 mm copper wire stripline (note 4) stripline (note 4) stripline (note 4) 0.4 W metal film resistor 10 turn potentiometer 0.4 W metal film resistor 1 W metal film resistor
VALUE 10 F, 63 V 18 pF 12 pF 8.2 pF 30 pF 34.5 50 22.3 22.3 22.3
DIMENSIONS
CATALOGUE NO. 2222 030 38109
length 66.5 mm width 4 mm length 66.5 mm width 3.6 mm length 35 mm width 7 mm length 10 mm width 7 mm length 5.5 mm width 7 mm 4312 020 36642
17 nH
length 5 mm int. dia. 9 mm leads 2 x 5 mm length 15 mm width 7 mm length 36 mm width 7 mm length 8.5 mm width 7 mm 2322 151 72473 2322 151 71053 2322 151 51009
L13, L14 L18, L19 L20, L21 R1, R5 R2, R6 R3, R4 R7, R8 Notes
22.3 22.3 22.3 24.7 k 5 k 10.5 k 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 4. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 0.79 mm. 5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively.
October 1992
8
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
R2
handbook, full pagewidth
V DS L10 R7 C13 C12 L22/L23
L1/L2
C8 C7 R3 C1 C3 C4 C2 L4 L5 L6 C5 C6 C9 L7 R4 C10 L8
C14
L11
L12 L13 C18 C19 L9 L14 L18 C22 L19 L21 C24 C23 L20
C20 C21
L15 C15 L16 R8 L17 R6 V DS
MBC231 - 1
C17 L24 C16
L3
C11
handbook, full pagewidth
200 mm
strap
strap
strap
strap
rivets
rivets 70 mm
strap
strap
strap
strap
MBC230
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
handbook, halfpage
1 Zi () 0
MRA528
handbook, halfpage
ri
6 ZL () 5
MRA530
-1
xi
4 RL 3
-2 2 XL -3 1 -4 50
150
250
350
450 550 f (MHz)
0 50
150
250
350
450 550 f (MHz)
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device).
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device).
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage G
30 P (dB) 25
MRA526
20
15
handbook, halfpage
10
Zi
ZL
MBA379
5
0 50
150
250
350
450 550 f (MHz)
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device).
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values per section.
October 1992
10
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF548
SOT262A2
D
A F
U1 q H1 C w2 M C
B
c
1
2
H
U2
p
E1 w1 M A B
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.39 4.62 0.212 0.182 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2,47 2.20 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.395 0.396
0.230 0.006 0.220 0.004
0.097 1.100 0.087
OUTLINE VERSION SOT262A2
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
11
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF548
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
12

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