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APT15GP60B APT15GP60S
600V
POWER MOS 7 IGBT
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* 100 kHz operation @ 400V, 19A * 200 kHz operation @ 400V, 12A * SSOA rated
G
C
E
All Ratings: TC = 25C unless otherwise specified.
APT15GP60B_S UNIT
600 20 30 56 27 65 65A @ 600V 250 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 25C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 250
2
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-7413
Rev C
I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
5-2006
I CES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
A
2500
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
1 APT15GP60B_S
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 15A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 15A
4
MIN
TYP
MAX
UNIT pF V nC A
1685 210 15 7.5 55 12 15 65 8 12 29 58 130 152 121 8 12 69 88 130 267 268
MIN TYP MAX UNIT C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
44 55
R G = 5 TJ = +25C
Turn-on Switching Energy (With Diode) 5
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 15A R G = 5 TJ = +125C
Turn-on Switching Energy (With Diode)
66
J
THERMAL AND MECHANICAL CHARACTERISTICS .50 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7413
Rev C
5-2006
TYPICAL PERFORMANCE CURVES
30 25 20 15 10 5 0 TC=25C TC=125C TC=-55C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
30 25 20 15 10 5 0
APT15GP60B_S
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=25C TC=125C TC=-55C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 15A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 100 TJ = -55C
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60 VCE = 480V
IC, COLLECTOR CURRENT (A)
80
VCE = 120V VCE = 300V
60
40 TJ = 25C 20 TJ = 125C 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5
3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC =30A IC = 15A
IC =30A IC = 15A IC = 7.5A
2 1.5 1 0.5 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 0 6 IC = 7.5A
0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80
0 -50
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
5-2006 050-7413 Rev C
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
18
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
80 70 60 50 40 30 20 10 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C VGE =10V,TJ=125C
APT15GP60B_S
VGE =15V,TJ=125C
16 14 12 10 8 6 4 2 0 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H VGE= 10V VGE= 15V
VGE =10V,TJ=25C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30
TJ = 25 or 125C,VGE = 10V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
25
tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 10V or 15V
20 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG =5, L = 100H, VCE = 400V
60
TJ = 25C, VGE = 10V or 15V
40
20
RG =5, L = 100H, VCE = 400V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 700
EON2, TURN ON ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 700
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
0
TJ = 125C, VGE = 10V or 15V
600 500 400 300 200
TJ =125C, VGE=15V
600 500 400 300 200 100 0
TJ =125C,VGE=10V
TJ = 25C, VGE=15V
100 0
TJ = 25C, VGE=10V
TJ = 25C, VGE = 10V or 15V
0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 900
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 700
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
800 700 600 500 400 300 200 100 0 0
Eon2 30A
600 500
Eoff 30A
Eon2 30A 400 300 200 100 0 -50
Eoff 30A
Eon2 15A Eoff 15A Eon2 7.5A Eoff 7.5A
5-2006
Eon2 15A Eoff 15A
Eon2 7.5A Eoff 7.5A
Rev C
050-7413
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000
IC, COLLECTOR CURRENT (A)
70 Cies 60 50 40 30 20 10 0
APT15GP60B_S
1,000
C, CAPACITANCE ( F)
500 Coes 100 50 Cres 10
P
10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.3
ZJC, THERMAL IMPEDANCE (C/W)
Note:
PDM t1 t2
0.20
0.10 0
0.1 0.05 10-5 10-4
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
292
FMAX, OPERATING FREQUENCY (kHz)
TJ ( C)
0.216 Dissipated Power (Watts) 0.0060 0.161
TC ( C)
0.284
100
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
50
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
5
10
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
5-2006 050-7413 Rev C
TJ - TC R JC
APT15GP60B_S
Gate Voltage
APT15DF60
10%
TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
Switching Energy
10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage Collector Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
A V CE 100uH IC V CLAMP B
td(off)
tf
90%
10% Switching Energy
0
A DRIVER* D.U.T.
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-247 (B) Package Outline
D PAK (S) Package Outline
3
Collector (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
15.95 (.628) 16.05(.632)
1.04 (.041) 1.15(.045)
13.41 (.528) 13.51(.532)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
5-2006
0.40 (.016) 0.79 (.031)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
19.81 (.780) 20.32 (.800)
Heat Sink (Collector) and Leads are Plated
1.01 (.040) 1.40 (.055)
Gate Collector Emitter
Rev C
2.21 (.087) 2.59 (.102)
050-7413
5.45 (.215) BSC 2-Plcs.
Emitter Collector Gate Dimensions in Millimeters (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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