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| SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.013 @ VGS = 4.5 V ID (A) 70a 60 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP70N03-09BP SUB70N03-09BP N-Channel MOSFET DS Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 30 "20 70b 50 200 30 61 93b -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71229 S-20102--Rev. B, 11-Mar-02 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 1.6 Unit _C/W 1 SUP/SUB70N03-09BP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea VGS = 10 V, ID = 30 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 0.010 45 70 0.007 0.009 0.0135 0.017 0.013 S W Symbol Test Condition Min Typ Max Unit 30 V 0.8 2.0 "100 1 50 150 A m mA nA Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Gate Resistance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg VDD = 15 V, RL = 0.21 W ID ] 70 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 5 V, ID = 70 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 530 240 15.5 5 6 10 8 25 9 2 18 15 45 16 W ns 19 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 70 A, VGS = 0 V IF = 70 A, di/dt = 100 A/ms 1.1 30 70 A 200 1.5 60 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71229 S-20102--Rev. B, 11-Mar-02 SUP/SUB70N03-09BP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 160 5V I D - Drain Current (A) 120 4V 80 3V 40 1, 2 V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 I D - Drain Current (A) 150 25_C TC = -55_C 200 Vishay Siliconix Transfer Characteristics 100 125_C 50 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C g fs - Transconductance (S) r DS(on) - On-Resistance ( W ) 80 25_C 60 125_C 40 0.020 0.025 On-Resistance vs. Drain Current 0.015 VGS = 4.5 V 0.010 VGS = 10 V 20 0.005 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2400 10 Gate Charge V GS - Gate-to-Source Voltage (V) 2000 C - Capacitance (pF) Ciss 1600 8 VDS = 15 V ID = 70 A 6 1200 4 800 Crss 400 Coss 2 0 0 6 12 18 24 30 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71229 S-20102--Rev. B, 11-Mar-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP/SUB70N03-09BP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( W) (Normalized) 1.6 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.2 0.8 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 45 ID = 250 mA 40 V(BR)DSS (V) 35 30 25 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71229 S-20102--Rev. B, 11-Mar-02 SUP/SUB70N03-09BP New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 80 1000 Limited by rDS(on) 60 I D - Drain Current (A) I D - Drain Current (A) 10 ms 100 100 ms 1 ms 10 10 ms 100 ms dc 1 TC = 25_C Single Pulse Vishay Siliconix Safe Operating Area 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance 0.1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (sec) 1 10 100 Document Number: 71229 S-20102--Rev. B, 11-Mar-02 www.vishay.com 5 |
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