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| GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES * SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS * LOW CRSS: 0.02 pF (TYP) * HIGH GPS: 20 dB (TYP) AT 900 MHz * LOW NF: 1.1 dB TYP AT 900 MHz * LG1 = 1.0 m, LG2 = 1.5 m, WG = 800 m * ION IMPLANTATION * AVAILABLE IN TAPE & REEL OR BULK Power Gain, GPS (dB) NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz 20 GPS 10 10 5 NF 0 0 0 5 10 DESCRIPTION The NE253 is an 800 m dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, IDS = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, IDS = 20 A Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 A Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 A Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 Gate 2 Reverse Current at VDS = 0. VG2S = -4V, VG1S = 0 Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, IDS = 10 mA, f = 1.0 kHz Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, IDS = 10 mA, f = 1 MHz UNITS dB dB V mA V V A A mS pF pF 25 1.0 35 1.5 0.02 2.0 0.035 16 10 10 40 80 -3.5 -3.5 10 10 MIN NE25339 39 TYP 1.1 20 MAX 2.5 California Eastern Laboratories Noise Figure, NF (dB) NE25339 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDSX VG1S VG2S ID TCH TSTG PT PARAMETERS Drain to Source Voltage Gate 1 to Source Voltage Gate 2 to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA C C mW RATINGS 10 -4.5 -4.5 80 125 -55 to +125 200 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 100 DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE VDS = 5 V VG2S = 1 V Total Power Dissipation, PT (mW) FREE AIR Drain Current, ID (mA) 200 0.5 V 150 50 0V 100 -0.5 V 50 -1.0 V 0 0 25 50 75 100 125 0 1.8 -1.2 -0.6 0 +0.6 +1.2 Ambient Temperature, TA (C) Gate 1 to Source Voltage, VG1S (V) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Forward Transfer Admittance, |YFS| mS VDS = 5 V f = 1 kHz Forward Transfer Admittance, |YFS| mS 80 80 VDS = 5 V f = 1kHz 40 VG2S = 1 V 40 VGS2 =1V 0.5 V 0V 0.5 V 0 0 -1.8 -1.2 -0.6 0 -0.5 V +0.6 +1.2 0 0 -0.5 V 50 100 Gate 1 to Source Voltage, VG1S (V) Drain Current, ID (mA) NE25339 TYPICAL PERFORMANCE CURVES (TA = 25C) INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2.0 30 GPS POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 10 Input Capacitance, CISS (pF) VG1S = 1 V at ID = mA 15 Power Gain, GPS (dB) VG1S = 1 V at ID = 5 mA 0 5 -15 1.0 -30 NF VDS = 5 V f = 1 kHz 0 -1.0 0 +1.0 -45 -3.0 -2.0 -1.0 0 +1.0 0 +2.0 Gate 2 to Source Voltage, VG2S (V) Gate 2 to Source Voltage, VG2S (V) POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT 25 GPS 10 Power Gain, GPS (dB) 15 VDS = 5 V VG2S = 1 V f = 900 MHz 5 10 5 NF 0 0 5 10 0 Drain Current, ID (mA) TEST CIRCUIT DIAGRAM 900 MHz GPS and NF TEST CIRCUIT VG2S (1 V) 1000pF 47 k 1000 pF UP TO 10 pF INPUT 50 UP TO 10 pF L1 47 k G2 UP TO 10 pF L2 RFC UP TO 10 pF D G1 S OUTPUT 50 1000pF 1000pF L1, L2, 35 X 5 X 0.2 mm Note: IDS = 10 mA VG1S VDD (5 V) Noise Figure, NF (dB) 20 Noise Figure, NF (dB) NE25339 NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters UGW NGF IS N RG RD RS RIS RID TAU CDSO C11O C11TH VINFL DELTGS DELTDS LAMBDA C11DELT C12O C12SAT CGDSAT KBK VBR NBR (1) Libra EEFET3 Model FET1 100e-6 4 8.78e-10 1.33 0 0 0 0 0 1.0e-12 5.0e-15 0.25e-12 0.1e-12 -1.12 1.2 1 0.25 0 0 0.01e-12 1.0e-15 0.03 6.5 2 FET2 100e-6 4 8.78e-10 1.33 0 0 0 0 0 1.0e-12 5.0e-15 0.5e-12 0.1e-12 -1.12 1.2 0.1 0.25 0 0 0.01e-12 1.0e-15 0.03 6.5 2 Parameters IDSOC RDB CBS GDBM KDB VDSM GMMAXAC GAMMAAC KAPAAC PEFFAC VTOAC VTSOAC VDELTAC GMMAX GAMMA KAPA PEFF VTO VTSO VDELT VCH VSAT VGO VDSO FET1 0.07 1.0e9 0.16e-12 0.00035 0 1 0.0195 0.006 0.95 1.67 -1.895 -10 3 0.0294 0.005 0.8 1.636 -2 -10 1.47 1 3 1.47 3 FET2 0.07 1.0e9 0.16e-12 0 0 1 0.0394 0.06 0.95 2.07 -1.895 -10 3 0.0394 0.006 0.026 1.636 -2 -10 1.47 1 3 1.47 3 NE25339 SCHEMATIC PORT Pdrain port = 2 CAP CpkgG2D C = 0.15 IND Ld L = 1.30e-02 RES Rd R = 4.50 CAP Cg2d C = 0.15 PORT P1 port = 3 IND Lg2 L = 2.50 RES Rg2 R = 0.2 EEFET3 FET2 UGW=800 N=4 FILE=720 m_t.mdif MODE=nonlinear CAP CpkgDS C = 0.21 CAP CpkgG1G2 C = 0.21 CAP Cg1d C = 4.30e-02 IND Lg1 L = 1.00e-02 RES R12 R = 0.10 EEFET3 FET1 UGW=800 N=4 FILE=720 m_b.mdif MODE=nonlinear PORT Pgate1 port = 1 RES Rg1 R = 0.2 CAP Cg1s C = 1.00e-02 CAP Cg2s C = 0.25 RES Rs R = 5.30 IND Ls L=3 CAP CpkgG1S C = 0.15 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms PORT P4 port = 4 NOTES: 1. This UGW value scales the model parameters on page 1. 2. This N value is the number of gate fingers and scales the model parameters on page 1. Frequency: Bias: 0.1 to 1.5 GHz VDS = 3 V, Vg1s= -1.45 V, Vg2s= 1 V, ID = 3 mA NE25339 OUTLINE DIMENSIONS (Units in mm) OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) ORDERING INFORMATION PART NUMBER NE25339 NE25339-T1 AVAILABILITY Bulk up to 3 K 3K/Reel IDSS RANGE (mA) 10 - 80 10 - 80 MARKING - 2.9 0.2 0.95 0.85 2 3 1.9 1 +0.10 0.6 -0.05 4 +0.2 1.1 -0.1 0.8 0.16 +0.10 -0.06 1. Source 2. Drain 3. Gate 2 4. Gate 1 5 0 to 0.1 5 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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