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| BAS31 Discrete POWER & Signal Technologies BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 2 SOT-23 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 90 200 600 700 1.0 2.0 -50 to +150 150 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max BAS31 350 2.8 357 Units mW mW/C C/W (c)1997 Fairchild Semiconductor Corporation BAS31 High Voltage General Purpose Diode (continued) Electrical Characteristics Symbol BV IR VF TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Forward Voltage Test Conditions I R = 1.0 mA VR = 90 V VR = 90 V, TA = 150C I F = 10 mA I F = 50 mA I F = 100 mA I F = 200 mA I F = 400 mA VR = 0, f = 1.0 MHz I F = IR = 30 mA, VR = 6.0 V, I RR = 3.0 mA, RL = 100 Min 120 Max 100 100 750 840 900 1.0 1.25 35 50 Units V nA A mV mV mV V V pF nS CO TRR Diode Capacitance Reverse Recovery Time |
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