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Composite Transistors
XN04604 (XN4604)
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For amplification of low-frequency output Features
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
3 2 1
(0.65)
2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 6
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
0.30+0.10 -0.05
Basic Part Number
* 2SD1328 + 2SB0970 (2SB970)
0.50+0.10 -0.05 10
1.1+0.2 -0.1
Absolute Maximum Ratings Ta = 25C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 25 20 12 0.5 1 -15 -10 -7 - 0.5 -1 300 150 -55 to +150 Unit V V V A A V
Tr2
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74
0 to 0.1
1.1+0.3 -0.1
4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package
Marking Symbol: 5I Internal Connection
4 5 6
Tr1
V V A A mW C C
3 2 1
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004 SJJ00084BED
0.40.2
5
1
XN04604
Electrical Characteristics Ta = 25C 3C
* Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistance *2
*1
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron
Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 20 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 25 20 12
Typ
Max
Unit V V V A V V MHz pF
0.1 200 60 0.13 0.40 1.2 200 10 1.0 800
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 k *2: Ron test circuit
IB = 1 mA VB VV VB x 1 000 () V A - VB f = 1 kHz V = 0.3 V
VA
* Tr2
Parameter
Ron =
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = - 0.5 A VCE = -2 V, IC = -1 A IC = - 0.4 A, IB = -8 mA IC = - 0.4 A, IB = -8 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min -15 -10 -7
Typ
Max
Unit V V V
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *
- 0.1 100 60 - 0.16 - 0.30 - 0.8 130 22 -1.2 350
A V V MHz pF
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
2
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XN04604
Common characteristics chart PT Ta
500
Total power dissipation PT (mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of Tr1 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
1.2 Ta = 25C IB = 4.0 mA 3.5 mA 102
VCE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 25
102
VBE(sat) IC
IC / IB = 10
1.0
Collector current IC (A)
3.0 mA 0.8 2.5 mA 0.6 2.0 mA 1.5 mA 0.4 1.0 mA 0.2 0.5 mA
10
10
25C 1 Ta = -25C 75C
1
Ta = 75C 10-1 25C -25C
10-1
0
0
1
2
3
4
5
6
10-2 10-2
10-1
1
10
10-2 10-2
10-1
1
10
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE IC
1 200 VCE = 2 V
400
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
VCB = 10 V Ta = 25C
Cob VCB
24 f = 1 MHz IE = 0 Ta = 25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 000
20
300
800 Ta = 75C 600 25C -25C
16
200
12
400
8
100
200
4
0 10-2
10-1
1
10
0 -1
-10
-102
0
1
10
102
Collector current IC (A)
Emitter current IE (mA)
Collector-base voltage VCB (V)
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XN04604
Characteristics charts of Tr2 IC VCE
Ta = 25C IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-102
VBE(sat) IC
-102
-1.2
-1.0
Collector current IC (A)
-10
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 50
IC / IB = 50
-10
- 0.8
25C -1
- 0.6
-1 Ta = 75C 25C -25C
Ta = -25C 75C
- 0.4
-10-1
-10-1
- 0.2
0
0
-1
-2
-3
-4
-5
-6
-10-2 -10-2
-10-1
-1
-10
-10-2 -10-2
-10-1
-1
-10
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE IC
600 VCE = -2 V
200
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
VCB = -10 V Ta = 25C
Cob VCB
80 f = 1 MHz IE = 0 Ta = 25C 60
Forward current transfer ratio hFE
Transition frequency fT (MHz)
500
160
400
Ta = 75C 25C
120
300 -25C 200
40
80
20
100
40
0 -10-2
-10-1
-1
-10
0
1
10
102
0 -1
-10
-102
Collector current IC (A)
Emitter current IC (mA)
Collector-base voltage VCB (V)
4
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Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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