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Phototransistors
PNA1605F (PN116)
Silicon planar type
Unit: mm
For optical control systems
1.50.2
4.50.15 3.50.15
Not soldered 2.0
2.10.15 1.60.15 0.80.1
12.5 min.
10 min.
* High sensitivity * Wide directivity characteristics, suited for detecting GaAs LEDs: = 70 (typ.) * Fast response: tr , tf = 8 s (typ.) * Side-view type package
3.90.25
Features
(2.4)
3-0.450.2 0.450.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-emitter voltage (Base open) Collector-base voltage (Emitter open) Emitter-collector voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Rating 20 30 5 5 10 100 -25 to +85 -30 to +100 Unit V V V V mA mW C C
1.27
1.27
1
2
3
1: Emitter 2: Collector 3: Base LSTFR103-001 Package
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Photocurrent Dark current Peak emission wavelength Half-power angle Rise time *2 Fall time *2 Collector-emitter saturation voltage *1
*1
Symbol ICE(L) ICEO p tr tf VCE(sat) VCE = 10 V VCE = 10 V
Conditions VCE = 10 V, L = 100 lx
Min 0.2
Typ 0.8 0.05 900 70 8 9
Max
Unit mA A nm s s
2.00
The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 1 mA, RL = 100 ICE(L) = 1 mA, L = 1 000 lx
0.3
0.6
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit
Sig. in VCC (Input pulse) Sig. out (Output pulse) RL 90% 10% td tr tf td: Delay time tr: Rise time tf: Fall time
50
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004 SHE00003BED
1
PNA1605F
PC Ta
120 10 L = 1 000 lx
ICE(L) VCE
Ta = 25C 900 lx T = 2 856 K 800 lx 700 lx 6 600 lx 500 lx 4 400 lx 300 lx 2 200 lx 100 lx 103
ICE(L) L
VCE = 10 V Ta = 25C T = 2 856 K
Collector power dissipation PC (mW)
100
8
Photocurrent ICE(L) (mA)
80
Photocurrent ICE(L) (mA)
102
10
60
1
40
20
10-1
0 -20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10-2
1
10
102
103
104
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Illuminance L (lx)
ICEO Ta
102 VCE = 10 V 102
ICE(L) Ta
VCE = 10 V L = 100 lx T = 2 856 K
Spectral sensitivity characteristics
100 VCE = 10 V Ta = 25C
10
80 10
1
Relative sensitivity S (%)
Photocurrent ICE(L) (mA)
Dark current ICEO (A)
60
10
-1
40
10-2
1
10-3
20
10-4 -20
0
20
40
60
80
100
10-1 -40
0
40
80
120
0 200
400
600
800
1 000
1 200
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Wavelength (nm)
Directivity characteristics
0 10 100 80 60 40 20 20 30 40 103
tr ICE(L)
VCC = 10 V Ta = 25C 103
tf ICE(L)
VCC = 10 V Ta = 25C
Relative sensitivity S (%)
50 60 70 80 90 102 RL = 1 k 102 RL = 1 k 500 100 1
Rise time tr (s)
10
500 100
Fall time tf (s)
10
1
10-1
10-1
10-2 -2 10
10-1
1
10
102
10-2 -2 10
10-1
1
10
102
Photocurrent ICE(L) (mA)
Photocurrent ICE(L) (mA)
2
SHE00003BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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