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| GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm * * * * FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 s (typ.) (IC = 60 A) FRD : trr = 0.8 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25C) Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25C) Junction Temperature Storage Temperature Screw Torque DC 1 ms DC 1 ms symbol VCES VGES IC ICP IECF IECFP PC Tj Tstg 3/4 Rating 1000 25 60 120 15 120 170 150 -55~150 0.8 Unit V V A JEDEC A W C C Nm 2-21F2C JEITA TOSHIBA Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25C) Characteristic Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr 10 9 ton tf toff VECF trr Rth(j-c) Rth(j-c) 15 V 0 -15 V IEC = 15 A, VGE = 0 IF = 15 A, VGE = 0, di/dt = -20 A/ms 3/4 3/4 51 W Test Condition VGE = 25 V, VCE = 0 VCE = 1000 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 10 A, VGE = 15 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3/4 3/4 3.0 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1.6 2.3 4000 0.23 0.33 0.25 0.70 1.5 0.8 3/4 3/4 Max 500 1.0 6.0 2.3 2.8 3/4 Unit nA mA V V V pF 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.40 ms 600 V 3/4 2.0 2.5 0.74 4.0 V ms C/W C/W 2 2002-01-18 GT60N321 IC - VCE 100 10 VCE - VGE Common emitter Tc = 25C Common emitter Tc = -40C 80 6 80 (V) 25 V (A) 10 V 15 V IC 60 VGE = 7 V 40 Collector-emitter voltage Collector current VCE 20 V 8 4 30 2 IC = 10 A 0 0 60 20 0 0 1 2 3 4 5 5 10 15 20 25 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter Tc = 25C 80 6 10 VCE - VGE Common emitter Tc = 125C 80 6 (V) VCE Collector-emitter voltage 4 60 2 30 0 0 IC = 10 A Collector-emitter voltage VCE 8 (V) 8 4 60 2 30 0 0 IC = 10 A 5 10 15 20 25 5 10 15 20 25 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 4 Common Emitter VCE = 5 V Common emitter VGE = 15 V 3 VCE (sat) - Tc (A) 80 Collector-emitter saturation voltage VCE (sat) (V) 80 60 IC Collector current 60 2 30 40 25 20 40 TC = 125C 0 0 2 4 6 8 1 IC = 10 A 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-01-18 GT60N321 VCE, VGE - QG Collector-emitter voltage VCE (V) (10 V) Gate-emitter voltage VGE (V) 20 Common emitter RL = 2.5 W TC = 25C 10 VCC = 600 V IC = 60 A VGG = 15 V TC = 25C Switching time - RG Common emitter 16 (ms) Switching time 12 VCE = 150 V toff ton tr tf 1 8 100 V 4 50 V 0 0 0.1 1 50 100 150 200 250 300 350 400 10 100 1000 Gate charge QG (nC) Gate resistance RG (W) Switching Time - IC 10 Common emitter VCC = 600 V RG = 51 W VGG = 15 V TC = 25C 10000 C - VCE Common emitter VGE = 0 V f = 1 MHz TC = 25C (pF) Cies 1000 (ms) Switching time 1 toff ton tf tr Capacitance C 100 Coes Cres 10 1 10 100 1000 10000 0.1 0 Collector-emitter voltage 20 40 60 80 VCE (V) Collector current IC (A) Reverse Bias SOA Safe Operating Area 1000 300 Tj < 125C = 100 VGE = 15 V RG = 10 W (A) (A) DC Operation * Single 10 non-repetitive pulse Tc = 25C curves must be derated linearly with increase in temperature. 1 10 1 1 ms* 10 ms* 100 ms* 50 30 Collector current Collector current IC max (Pulsed)* IC max 100 (Continuous) IC 10 ms* IC 10 5 3 100 1000 3000 1 1 30 100 300 1000 3000 Collector- emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2002-01-18 GT60N321 10 3 Rth (t) - tw 100 Tc = 25C Common collector IECF - VECF Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (C/W) 10 2 80 10 1 Diode Stage 10 0 IGBT Stage 60 10-1 10-2 10-3 10-5 40 -40 20 Tc = 125C 25 0 0.0 0.5 1.0 1.5 2.0 2.5 10-4 10-3 10-2 10-1 10 0 10 1 10 2 Pulse width tw (s) Collector-emitter forward voltage VECF (V) Irr, trr - IECF 10 Common emitter di/dt = -20 A/ms Tc = 25C 2 50 Irr, trr - di/dt 1 Common emitter IECF = 60 A Tc = 25C Irr (A) Irr (A) (ms) 9 1.6 40 0.8 trr Peak reverse recovery current Peak reverse recovery current Reverse recovery time 8 trr Irr 7 1.2 30 0.6 0.8 20 0.4 6 0.4 10 0.2 5 0 20 40 60 80 0 100 0 0 50 100 150 200 0 250 Emitter-collector forward current IECF (A) di/dt (A/ms) 5 2002-01-18 Reverse recovery time trr (ms) trr GT60N321 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-18 This datasheet has been download from: www..com Datasheets for electronics components. |
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