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Fast Recovery Epitaxial Diode (FRED)
DSEI 2x 101
VRRM = 600 V IFAVM = 2x 96 A trr = 35 ns
VRSM V 600
VRRM V 600
Type
miniBLOC, SOT-227 B E72873
DSEI 2x 101-06A
Symbol IF(RMS) IF(AV)M x IFRM IFSM
Test Conditions
Maximum Ratings (per diode) 150 96 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W V~ Nm/lb.in. Nm/lb.in. g
TVJ = TVJM TC = 70C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ matched diodes f. parallel operation Planar passivated chips two independent diodes Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour
q q q q q q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 100 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C TC = 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque Terminal connection torque (M4)
miniBLOC, SOT-227 B
250 2500 1.5/13 1.5/13 30
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
031
Characteristic Values (per diode) typ. max. 3 1 20 1.17 1.25 0.70 4.7 0.5 0.05 mA mA mA V V V mW K/W K/W ns A
VF VT0 rT RthJC RthCH trr IRM
For power-loss calculations only
IF = 1 A; -di/dt = 400 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 80 A; -diF/dt = 200 A/s L 0.05 mH; TVJ = 100C
35 19
50 24
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
DSEI 2x 101, 600V
150 A 125 IF Qr 100
7 T = 100C C VJ V = 300V 6R 5 4
IF=200A IF=100A IF= 50A
80 A TVJ= 100C 70 VR = 300V IRM 60 50 40 30
IF=200A IF=100A IF= 50A
75
TVJ=150C
3 2 1
TVJ=25C
50
TVJ=100C
20 10 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
25 0 0.0
0.5
1.0 V VF
1.5
0 100
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
260 ns 240 trr 220 200
TVJ= 100C VR = 300V
Fig. 3 Peak reverse current IRM versus -diF/dt
60 V 50 VFR 40 2.0
tfr VFR TVJ= 100C IF = 100A
1.4
3.0 s 2.5 tfr
1.2 Kf 1.0
Qr IRM
0.8
180 160
IF=200A IF=100A IF= 50A
30 20 10 0
1.5 1.0 0.5 0.0 1000 A/ms
0.6 140 0.4 0 50 100 TVJ C 150 120 0 200 400 600 A/ms 1000 800 -diF/dt
0
200
400
600 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.02 0.05 0.076 0.24 0.114 ti (s) 0.00002 0.00081 0.01 0.94 0.45
D=0.7
ZthJC
0.5 0.3 0.2 0.1
1 2 3 4 5
0.1
0.05 Single Pulse
DSEI 2x101-06
0.05 0.001
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
(c) 2000 IXYS All rights reserved
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