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| Advanced Monolithic Systems * High Collector-Emitter Breakdown * High Frequency of 1.2GHz at 50mA * Available in TO-220 Package AMS264 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES APPLICATIONS 120V Min. * High density Television * Computer Monitors GENERAL DESCRIPTION The AMS264 is an RF type small signal bipolar transistor designed for use in high performance applications such as advanced color CRT monitor drivers that require both high frequency and high voltage. The use of fully ion implanted technology and silicon nitride passivation makes the AMS264 a highly reliable device. For a complimentary NPN transistor in applications where the matching characteristics are important use AMS232. ORDERING INFORMATION: PACKAGE TYPE TO-220 AMS264 OPERATING JUNCTION TEMP. RANGE -40C to +150C PIN CONNECTIONS 1- Emitter 2- Collector 3- Base FRONT VIEW 3 2 1 ABSOLUTE MAXIMUM RATINGS (Note 1) Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current 125V 130V 3.5V 250mA Operating Junction Temperature Storage Temperature Power Dissipation @ TC =75C Thermal Resistance, Junction to Case 150C -40C to +150C 5W 25C/W Note1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS264 ELECTRICAL CHARACTERISTICS Electrical Characteristics at TC = 25C, unless otherwise specified Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cutoff Current On Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Collector Base Capacitance Input Capacitance Transistor Frequency COB CCB CIB fT VCB = 10V, IE = 0, f = 1MHz VCB = 10V, IE = 0, f = 1MHz VEB = 3V, f = 1MHz VCE = 15V, IC = 50mA 1.2 2.8 2.2 5.8 pF pF pF GHz HFE IC = 50mA, VCE = 15V 30 V(BR)CEO V(BR)CBO V(BR)EBO ICES IC = 1mA, IB = 0 IC = 100A, IB = 0 IE = 100nA, IC = 0 VCE = 110V, VBE = 0 120 120 3 100 V V V nA Symbol Conditions Min AMS264 Typ Max Units TYPICAL PERFORMANCE CHARACTERISTICS Gain Bandwidth Product vs Collector Current GAIN BANDWIDTH PRODUCT (MHz) 1400 10 8 CAPACITANCE (pF) 6 4 Junction Capacitance vs Voltage 20 16 CAPACITANCE (pF) 12 8 Input Capacitance vs Voltage 1200 1000 800 600 400 f =250MHz VCE = 25V C OB C IB 2 0 0 3 6 C CB 4 0 0 15 30 45 60 75 90 105 120 135 150 COLLECTOR CURRENT (mA) 9 12 15 18 21 24 27 30 0 1 2 3 4 5 COLLECTOR BASE VOLTAGE (V) EMITTER BASE VOLTAGE (V) Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS264 PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted. 3 LEAD TO-220 PLASTIC PACKAGE (T) 0.390-0.415 (9.906-10.541) 0.147-0.155 (3.734-3.937) DIA 0.230-0.270 (5.842-6.858) 0.570-0.620 (14.478-15.748) 0.165-0.180 (4.191-4.572) 0.045-0.055 (1.143-1.397) 0.460-0.500 (11.684-12.700) 0.330-0.370 (8.382-9.398) 0.980-1.070 (24.892-27.178) 0.218-0.252 (5.537-6.401) 0.520-0.570 (13.208-14.478) 0.090-0.110 (2.286-2.794) 0.028-0.038 (0.711-0.965) 0.050 (1.270) TYP 0.013-0.023 (0.330-0.584) 0.095-0.115 (2.413-2.921) T (TO-220) AMS DRW# 042193 Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 |
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