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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V
ID25
RDS(on)
67 A 25 mW 75 A 20 mW
trr 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 67N10 75N10 67N10 75N10 67N10 75N10
Maximum Ratings 100 100 20 30 67 75 268 300 67 75 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2.0 4 100 TJ = 25C TJ = 125C 250 1 0.025 0.020 V V nA mA mA W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays
q q q q q q q q
67N10 75N10 Pulse test, t 300 ms, duty cycle d 2 %
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
q q q
IXYS reserves the right to change limits, test conditions, and dimensions.
91521F (10/95)
(c) 2000 IXYS All rights reserved
1-4
IXFH 67N10 IXFM 67N10
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 30 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 800 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 W, (External) 60 80 60 180 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 36 85 30 110 110 90 260 70 160 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXFH 75N10 IXFM 75N10
TO-247 AD (IXFH) Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = ID25, pulse test
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 67N10 75N10 67N10 75N10 67 75 268 300 1.75 200 300 A A A A V ns ns
J K L M N
1.5 2.49
TO-204 AE (IXFM) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/ms, TJ = 25C VR = 25 V TJ = 125C
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66
Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFH 67N10 IXFM 67N10
Fig. 1 Output Characteristics
200
TJ = 25C VGS = 10V 9V
IXFH 75N10 IXFM 75N10
Fig. 2 Input Admittance
150 125
150
ID - Amperes
8V
ID - Amperes
100 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10
TJ = 125C
100
7V 6V
50
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5V
TJ = 25C
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.3
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75
ID = 37.5A
1.2
VGS = 10V
1.1 1.0
VGS = 15V
0.9 0.8 0 20 40 60 80 100 120 140 160
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
80
Fig. 5 Drain Current vs. Case Temperature
75N10 67N10
1.2 1.1
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
VGS(th) BVDSS
60
BV/VG(th) - Normalized
50 75 100 125 150
ID - Amperes
1.0 0.9 0.8 0.7 0.6
40
20
0 -50
-25
0
25
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFH 67N10 IXFM 67N10
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 50V ID = 37.5A IG = 1mA Limited by RDS(on)
IXFH 75N10 IXFM 75N10
Fig.8 Forward Bias Safe Operating Area
10s 100s
100
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200
ID - Amperes
VGS - Volts
1ms
10
10ms 100ms
1 1 10 100
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
6000 5000
150 125
Fig.10 Source Current vs. Source to Drain Voltage
Capacitance - pF
3000 2000 1000 0 0 5
f = 1MHz VDS = 25V Coss
IS - Amperes
4000
Ciss
100 75 50
TJ = 125C
25
Crss
TJ = 25C
10
15
20
25
0 0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS - Volts
VSD - Volt
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
(c) 2000 IXYS All rights reserved
4-4

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