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| PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses * HEXFRED TM soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast CoPack IGBT VCES = 600V VCE(sat) 3.8V G E @VGE = 15V, IC = 14A n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter VCES I C @ TC = 25C I C @ TC = 100C I CM I LM I F @ TC = 100C I FM t sc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 23 14 46 46 12 46 10 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s V W C Thermal Resistance Parameter RJC RJC RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, (PCB Mount)** Junction-to-Ambient, typical socket mount Weight Min. -------------------------- Typ. -------------------2 (0.07) Max. 1.2 2.5 40 80 ------ Units C/W g (oz) ** When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application note #AN-994. IRGBC30KD2-S Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---Collector-to-Emitter Saturation Voltage ---VCE(on) ------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 3.3 gfe Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---IGES V(BR)CES Typ. ---0.30 2.5 3.3 2.5 ----13 6.5 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 3.8 IC = 14A VGE = 15V See Fig. 2, 5 ---V IC = 23A ---IC = 14A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 14A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Max. Units Conditions 58 IC = 14A 13 nC VCC = 400V 23 See Fig. 8 ---TJ = 25C ---ns IC = 14A, VCC = 480V 170 VGE = 15V, RG = 23 140 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 2.4 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 23, VCPK < 500V Turn-On Delay Time ---64 ---TJ = 150C, See Fig. 9, 10, 11, 18 t d(on) Rise Time ---- 100 ---ns IC = 14A, VCC = 480V tr t d(off) Turn-Off Delay Time ---- 190 ---VGE = 15V, RG = 23 Fall Time ---- 180 ---Energy losses include "tail" and tf Total Switching Loss ---- 2.2 ---mJ diode reverse recovery. Ets Internal Emitter Inductance ---- 7.5 ---nH Measured 5mm from package LE Input Capacitance ---- 740 ---VGE = 0V Cies Coes Output Capacitance ---92 ---pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 9.4 --- = 1.0MHz Cres Diode Reverse Recovery Time ---42 60 ns TJ = 25C See Fig. t rr ---80 120 TJ = 125C 14 IF = 12A Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25C See Fig. Irr ---- 5.6 10 TJ = 125C 15 VR = 200V Diode Reverse Recovery Charge ---80 180 nC TJ = 25C See Fig. Q rr ---- 220 600 TJ = 125C 16 di/dt = 200A/ 180 s di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/s TJ = 25C See Fig. During t b ---120 Notes: ---TJ = 125C =80%(V CES), VGE=20V, L=10H, Pulse width 5.0s, VCC 17 single shot. RG = 23, ( See fig. 19 ) Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Pulse width 80s; duty factor 0.1%. Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. ------------------------------10 Typ. 39 8.7 15 67 120 110 94 1.1 0.5 1.6 ---- IRGBC30KD2-S 15 Duty cycle: 50% TJ = 125C Tsink = 90C Gate dr ive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 21W 12 Load Current (A) 9 60% of rated voltage 6 3 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 IC , Collector-to-Emitter Current (A) TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGBC30KD2-S 25 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 6.0 VGE = 15V 80s PULSE WIDTH 20 5.0 I C = 28A 4.0 15 3.0 10 I C = 14A 2.0 I C = 7.0A 1.0 5 0 25 50 75 100 125 A 150 0.0 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 Notes: 1. Duty fact or D = t 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case IRGBC30KD2-S 1400 20 1200 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = Cce + C gc VCE = 400V I C = 14A 16 C, Capacitance (pF) 1000 C ies 800 12 C oes 600 8 400 4 200 Cres A 1 10 100 0 0 0 10 20 30 A 40 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.80 100 Total Switching Losses (mJ) 1.76 1.72 Total Switching Losses (mJ) VCC VGE TC IC = 480V = 15V = 25C = 14A RG = 23 V GE = 15V V CC = 480V 10 I C = 24A 1.68 I C = 14A 1 1.64 I C = 7.0A 1.60 1.56 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 RG , Gate Resistance () TC, Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGBC30KD2-S 8.0 6.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 23 T C = 150C V CC = 480V V GE = 15V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 4.0 10 2.0 0.0 0 10 20 A 30 1 1 10 100 A 1000 IC , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - IF (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current IRGBC30KD2-S 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif /dt 600 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C di(rec)M/dt - (A/s) 400 1000 Q RR - (nC) IF = 6.0A I F = 24A I F = 12A I F = 12A 100 200 IF = 6.0A I F = 24A 0 100 di f /dt - (A/s) 1000 10 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M /dt vs. dif/dt IRGBC30KD2-S 90% Vge +Vge Same type device as D.U.T. Vce Ic 80% of Vce 430F D.U.T. 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 DIODE RECOVERY WAVEFORMS t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRGBC30KD2-S Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a L 1000V 50V 6000F 100V Vc* D.U.T. R L= 0 - 480V 480V 4 X IC @25C Fig. 19 - Clamped Inductive Load Test Circuit 4.69 (0.185) Fig. 20 - Pulsed Collector Current Test Circuit 4.20 (0.165) 1.32 (0.052) 10.54 (0.415) 10.29 (0.405) 1.40 (0.055) MAX. 4 1.22 (0.048) 10.67 (0.420) 15.49 (0.610) 14.73 (0.580) 9.91 (0.390) 1 2 3 2 LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR 1.78 (0.070) 1.27 (0.050) 2.79 (0.110) 2.29 (0.090) 5 TYP. 1.15 (0.045) MIN. 1.40 (0.055) 0.64 (0.025) 0.46 (0.018) 0.010 (0.004) 1.15 (0.045) 0.93 (0.037) 0.69 (0.027) 2.54 (0.100) 5.08 (0.200) REF. 2.89 (0.114) 2.64 (0.104) OUTLINE SMD-220 Dimensions in Millimeters and (Inches) |
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