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PD - 97012 IRF6610 DirectFETTM Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 3.6nC RDS(on) Qgs2 1.3nC RDS(on) Qoss 5.9nC 20V max 20V max 5.2m@ 10V 8.2m@ 4.5V Qrr 6.4nC Vgs(th) 2.1V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFETTM ISOMETRIC Description The IRF6610 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR 30 Typical RDS(on) (m) Max. 20 20 15 12 66 120 13 12 VGS, Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 ID= 12A A mJ A 25 20 15 10 5 0 3 4 5 T J = 25C 6 7 8 ID = 15A VDS= 16V VDS= 10V T J = 125C 9 10 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 12A. www.irf.com 1 05/25/05 IRF6610 Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 1.65 --- --- --- --- --- 41 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units --- 15 5.2 8.2 2.1 -5.2 --- --- --- --- --- 11 3.9 1.3 3.6 2.4 4.9 5.9 2.0 12 51 15 5.7 1520 440 220 --- --- 6.8 10.7 2.55 --- 1.0 150 100 -100 --- 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 10V = 1.0MHz ns nC Conditions VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A V mV/C A nA S VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 12A VDS = 10V nC VGS = 4.5V ID = 12A See Fig. 15 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 12A Clamped Inductive Load VDS = VGS, ID = 250A Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 12 2.4 1.0 18 3.6 V ns nC --- --- 120 Min. --- Typ. Max. Units --- 2.8 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A di/dt = 100A/s Notes: Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. 2 www.irf.com IRF6610 Absolute Maximum Ratings Parameter PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. 2.2 1.4 42 270 -40 to + 150 Units W C Thermal Resistance Parameter RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor Typ. --- 12.5 20 --- 1.4 0.017 Max. 58 --- --- 3.0 --- Units C/W W/C 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 1 2 3 4 5 5 A 1 Ri (C/W) 1.6195 2.14056 22.2887 20.0457 11.9144 i (sec) 0.000126 0.001354 0.375850 7.41 99 0.1 Ci= i/Ri Ci= i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C. Surface mounted on 1 in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) www.irf.com 3 IRF6610 1000 TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 BOTTOM 10 BOTTOM 10 1 60s PULSE WIDTH 0.1 2.5V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Tj = 25C 1 2.5V 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 VDS = 10V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C Typical RDS(on) (Normalized) Fig 5. Typical Output Characteristics 1.5 ID = 15A V GS = 10V V GS = 4.5V ID, Drain-to-Source Current () 10 1.0 1 0.1 1 2 3 4 5 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 6. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Fig 7. Normalized On-Resistance vs. Temperature 40 T J = 25C 30 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V Ciss 1000 Coss Typical RDS(on) ( m) C oss = C ds + C gd C, Capacitance(pF) 20 10 Crss 0 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 20 40 60 80 100 120 140 ID, Drain Current (A) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage 4 www.irf.com IRF6610 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 T J = 150C T J = 25C 1 T J = -40C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100sec 1 VGS = 0V 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD, Source-to-Drain Voltage (V) T A = 25C T J = 150C Single Pulse 0.10 1.00 10.00 1msec 10msec 100.00 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C) 2.0 ID = 250A 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 50 40 30 20 10 0 25 50 75 3.6A 5.3A BOTTOM 12A 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy Vs. Drain Current www.irf.com 5 IRF6610 Current Regulator Same Type as D.U.T. Id Vds 50K 12V .2F .3F Vgs D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V(BR)DSS 15V tp DRIVER VDS L VGS RG D.U.T IAS + V - DD A 20V tp 0.01 I AS Fig 16c. Unclamped Inductive Waveforms Fig 16b. Unclamped Inductive Test Circuit LD VDS 90% + VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% VDS 10% VGS td(on) tr td(off) tf Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms 6 www.irf.com IRF6610 D.U.T Driver Gate Drive + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer Reverse Recovery Current P.W. Period D= P.W. Period VGS=10V * + D.U.T. ISD Waveform Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs DirectFETTM Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. www.irf.com 7 IRF6610 DirectFETTM Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.52 E 0.48 0.52 F 0.48 0.92 G 0.88 0.82 H 0.78 N/A J N/A 0.97 K 0.93 2.10 L 2.00 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.019 0.020 0.035 0.036 0.031 0.032 N/A N/A 0.037 0.038 0.079 0.083 0.023 0.028 0.001 0.003 0.003 0.007 DirectFETTM Part Marking 8 www.irf.com IRF6610 DirectFETTM Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6610). For 1000 parts on 7" reel, order IRF6610TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MAX MIN MAX MAX MIN 12.992 6.9 A N.C N.C 177.77 N.C 330.0 N.C 0.795 0.75 B N.C 19.06 20.2 N.C N.C N.C 0.504 0.53 C 0.50 0.520 13.5 12.8 13.2 12.8 0.059 0.059 D 1.5 1.5 N.C N.C N.C N.C 3.937 2.31 E 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 12.4 N.C 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 N.C 0.606 15.4 12.01 Loaded Tape Feed Direction NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.158 0.165 4.20 4.00 0.197 0.205 5.20 5.00 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/05 www.irf.com 9 |
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