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| RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N10, transistors requiring high speed and low gate drive power. RFP12 These types can be operated directly from integrated N08, circuits. RFP12 Formerly developmental type TA09594. N10) /SubOrdering Information ject PART NUMBER PACKAGE BRAND 12A, 0V and RFM12N08 TO-204AA RFM12N08 00V, RFM12N10 TO-204AA RFM12N10 .2 RFP12N08 TO-220AB RFP12N08 hm, -Chan- RFP12N10 TO-220AB RFP12N10 el NOTE: When ordering, use the entire part number. ower OSPackaging ETs) /Author JEDEC TO-204AA ) DRAIN /Key(FLANGE) ords Harris emionducor, NSOURCE (PIN 2) hanGATE (PIN 1) el ower OSETs, O04AA, O20AB) /Cre- 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs Features * 12A, 80V and 100V * rDS(ON) = 0.200 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N08 80 80 12 30 20 75 0.6 -55 to 150 300 260 RFM12N10 100 100 12 30 20 75 0.6 -55 to 150 300 260 RFP12N08 80 80 12 30 20 60 0.48 -55 to 150 300 260 RFP12N10 100 100 12 30 20 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 80 100 VGS(TH) IDSS VGS = VDS, ID = 250A (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) RFM12N08, RFM12N10 RFP12N08, RFP12N10 45 250 85 100 4 1 25 100 0.200 2.4 70 375 130 150 850 300 150 1.67 2.083 V V V A A nA V ns ns ns ns pF pF pF oC/W oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM12N08, RFP12N08 RFM12N10, EFP12N10 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 12A, VGS = 10V (Figures 6, 7) ID = 12A, VGS = 10V VDD = 50V, ID = 6A, RG = 50, VGS = 10V, RL = 8, (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulse test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 6A ISD = 4A, dISD/dt = 100A/s MIN TYP 150 MAX 1.4 UNITS V ns 2 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 14 12 ID, DRAIN CURRENT (A) RFM12N08, RFM12N10 10 RFP12N08, RFP12N10 8 6 4 2 0 0.8 0.6 0.4 0.2 0 0 50 100 150 25 50 TC, CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TC = 25oC ID (MAX) CONTINUOUS 16 VGS = 20V VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VGS = 9V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC OP ER VGS = 8V 8 VGS = 7V 4 VGS = 6V VGS = 5V 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 AT I ON 1 VDSS (MAX) 80V RFM12N08, RFP12N08 VDSS (MAX) 100V RFM12N10, RFP12N10 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 16 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 12 TC = -40oC 8 TC = 125oC 4 TC = 25oC TC = -40oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 12 TC = 25oC TC = 125oC 0.8 VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 0.6 0.4 TC = 125oC 0.2 TC = 25oC TC = -40oC 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Typical Performance Curves Unless Otherwise Specified 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 10V ID = 12A PULSE DURATION = 80s NORMALIZED GATE THRESHOLD VOLTAGE (Continued) 1.4 VGS = VDS ID = 250A 1.5 1.2 1.0 1 0.5 0.8 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1200 1000 C, CAPACITANCE (pF) 800 600 CISS 400 200 0 0 COSS CRSS 10 20 30 40 50 VDS, DRAIN TO SOURCE (V) 60 70 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 75 VDD = BVDSS GATE SOURCE VOLTAGE VGS = 10V VDD = BVDSS 8 6 50 0.75 BVDSS 0.50 BVDSS 25 0.25 BVDSS DRAIN SOURCE VOLTAGE 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) 0 2 4 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 4 VGS, GATE TO SOURCE VOLTAGE (V) RL = 8.33 IG(REF) = 0.56mA 10 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Test Circuits and Waveforms tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS 5 |
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