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Freescale Semiconductor Technical Data
Document Number: MC13820/D Rev. 1.1, 09/2005
MC13820
MC13820
Low Noise Amplifier with Bypass Switch
Device MC13820
Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Marking or Operating Temperature Range 820 Package QFN-12
1
Introduction
Contents:
1 2 3 4 5 6 7 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Electrical Specifications . . . . . . . . . . . . . . . . 3 Application Information . . . . . . . . . . . . . . . . 10 Printed Circuit Board . . . . . . . . . . . . . . . . . . 23 Scattering Parameters . . . . . . . . . . . . . . . . . 26 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Product Documentation . . . . . . . . . . . . . . . . 36
The MC13820 is a high gain LNA with extremely low noise figure, designed for cellular, GPS and ISM band applications. An integrated bypass switch is included to preserve input intercept performance. The input and output match are external to allow maximum design flexibility. The MC13820 is fabricated using Motorola's advanced RF BiCMOS process using the SiGe:C option and is packaged in the QFN12 leadless package.
1.1
* * *
Features
RF Input Frequency: 1000 MHz to 2.4 GHz Gain: 18 dB (typ) at 1575 MHz and 15.7 dB (typ) at 2140 MHz Output 3rd Order Intercept Point (OIP3): 18.5 dBm (typ) at 1575 MHz and 19.7 dBm (typ) at 2140 MHz Noise Figure (NF): 1.25 dB (typ) at 1575 MHz and 1.3 dB (typ) at 2140 MHz 1dB Compression Point (P1dB): -10 dBm (typ) at 1575 MHz and -5 dBm (typ) at 2140 MHz
* *
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. (c) Freescale Semiconductor, Inc., 2005. All rights reserved.
Introduction
* * *
* * *
Freescale's IP3 Boost Circuitry Bypass Mode Included for Improved Intercept Point Performance Total Supply Current: 2.8 mA @ 2.7 Vdc 10 A (typ) in Bypass Mode Bias Stabilized for Device and Temperature Variations QFN-12 Leadless Package with Low Parasitics SiGe Technology Ensures Lowest Possible Noise Figure
NC 12
NC 11
NC 10
NC
1
MC13820
9
Gnd
VCC1
2 Logic
8
Gain
LNA Out
3
7
Enable
4 Rbias
5 Emit Gnd
6 LNA In
Figure 1. Simplified Block Diagram
MC13820 Technical Data, Rev. 1.1 2 Freescale Semiconductor
Electrical Specifications
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings Symbol VCC Tstg TA Prf Pdis RJC RJA Value 3.3 -65 to 150 -30 to 85 10 100 24 90 Unit V C C dBm mW C/W C/W
Supply Voltage Storage Temperature Range Operating Ambient Temperature Range RF Input Power Power Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient, 4 layer board
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 200 V, Charge Device Model (CDM) 450 V, and Machine Model (MM) 50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic RF Frequency range Supply Voltage Logic Voltage Input High Voltage Input Low Voltage Symbol fRF VCC Min 1000 2.7 1.25 0 2.75 Typ Max 2400 3 VCC 0.8 Unit MHz V V
Table 3. Electrical Characteristics
(VCC = 2.75 V, TA = 25C, unless otherwise noted.) Characteristic Insertion Gain R1=1.2 k, Freq=1.575 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.575 GHz R1=2 k, Freq=2.14 GHz Maximum Stable Gain and/or Maximum Available Gain1 R1=1.2 k, Freq=1.575 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.575 GHz R1=2 k, Freq=2.14 GHz Minimum Noise Figure R1=1.2 k, Freq=1.575 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.575 GHz R1=2 k, Freq=2.14 GHz Symbol |S21|2 16 14.5 14.3 13 MSG, MAG 21.5 19.5 20.5 19.5 NFmin 1.01 0.96 1.01 0.96 1.1 1.05 1.1 1.05 22.5 20.5 21.5 19.6 dB 17.1 15.6 15.3 14.2 dB Min Typ Max Unit dB
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 3
Electrical Specifications
Table 3. Electrical Characteristics (continued)
(VCC = 2.75 V, TA = 25C, unless otherwise noted.) Characteristic Associated Gain at Minimum Noise Figure R1=1.2 k, Freq=1.575 GHz R1=1.2 k, Freq=2.14 GHz R1=2 k, Freq=1.575 GHz R1=2 k, Freq=2.14 GHz
1
Symbol Gnf
Min
Typ
Max
Unit dB
21.7 19 21.7 19
22.7 19.8 22.7 19.8
-
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
S 2 21 MAG = ---------- K K - 1 S 12
, if K > 1,
S 21 MSG = ---------S 12
, if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(VCC = 2.75 V, TA = 25C, Rbias = 2 k, unless otherwise noted.) Characteristic 1575 MHz (Refer to Figure 9) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current 1960 MHz (Refer to Figure 10) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 16 0 -7.0 -5.0 23 1960 16.4 1.25 1 -6 2.8 -4 4.7 25 10 1.4 3.3 5.1 20 MHz dB dB dBm dBm mA dB dB dBm A f G NF IIP3 P1dB ICC G NF IIP3 17.5 -1.0 -11 -6.0 26 1575 18 1.25 0.5 -10 2.8 -5.0 4.8 27 10 1.4 3.3 5.2 20 MHz dB dB dBm dBm mA dB dB dBm A Symbol Min Typ Max Unit
MC13820 Technical Data, Rev. 1.1 4 Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25C, Rbias = 2 k, unless otherwise noted.) Characteristic 2140 MHz (Refer to Figure 11) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current 2400 MHz (Refer to Figure 12) Frequency Active Gain Active Noise Figure Active Input Third Order Intercept Point Active Input 1dB Compression Point Active Current @ 2.75 V Bypass Gain Bypass Noise Figure Bypass Input Third Order Intercept Point Bypass Current f G NF IIP3 P1dB ICC G NF IIP3 13.8 3.5 -5.0 -5.0 22 2400 14 1.49 4.0 -4.0 2.8 -4.0 4.2 24 10 1.6 3.2 4.7 20 MHz dB dB dBm dBm mA dB dB dBm A f G NF IIP3 P1dB ICC G NF IIP3 15.3 2.5 -6.0 -4.2 22.5 2140 15.7 1.3 3.5 -5 2.8 -3.2 3.2 24.5 10 1.4 3.2 3.6 20 MHz dB dB dBm dBm mA dB dB dBm A Symbol Min Typ Max Unit
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 5
Electrical Specifications
Table 5. Truth Table
Enable Pin Function Pin Name Low Gain Circuit Bias VCC1 Toggles Gain Mode (Active or Bypass) Toggles LNA On/Off LNA Bias VCC3
NOTES: 1. 2. 3. 4.
Disable High Gain 1 1 1 1 Low Gain 1 0 0 1 High Gain 1 1 0 1
VCC1 GAIN ENABLE LNA Out
1 0 1 1
Logic state "1" equals VCC voltage. Logic state of "0" equals ground potential. VCC3 is inductively coupled to LNA OUT pin Minimum logic state "1" for enable and gain pins is 1.25 V. Maximum logic state "0" for enable and gain pins is 0.8 V.
Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency Rbias is 2 kohm
30 MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain, (dB) 25 20 15 |S21|2 10 5 0 0.5 1.5 2.5 3.5 4.5 5.5 f, Frequency (GHz) MAG
MSG
Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 2 k)
MC13820 Technical Data, Rev. 1.1 6 Freescale Semiconductor
Electrical Specifications
Maxim um Stable/Available Gain and Forw ard Insertion Gain vs. Frequency Rbias is 1.2 kohm 35 30 25 20 MAG 15 10 5 0 0.5 1.5 2.5 f, Frequency (GHz) 3.5 4.5 |S21|2 MSG M
Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 1.2 k)
MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain (dB)
Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
24 MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain (dB) 23 MSG/MAG 1.575 GHz 22 MSG/MAG 1.96 GHz 21 20 MSG/MAG 2.14 GHz 19 18 17 16 15 14 2.5 3 3.5 4 Icc (m A) 4.5 5 5.5
S|21|2 1.575 GHz
S|21|2 1.96 GHz
S|21|2 2.14 GHz
Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 7
Electrical Specifications
Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 2 kohm
1.2 NFmin, Minimum Noise Figure (dB) 1.15 1.1 1.05 Gnf
30 Gnf, Associated Gain (dB) Gnf, Associated Gain (dB) 25 20 15
1 0.95 0.9 0.85 1000
NFm in
10 5 0 2400
1200
1400
1600
1800
2000
2200
f, Frequency (MHz)
Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 2 k)
Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 1.2 kohm
1.12 NFmin, Minimum Noise Figure (dB) 1.1 1.08 1.06 1.04 1.02 1 0.98 1000 NFm in Gnf
30 25 20 15 10 5 0 2400
1200
1400
1600
1800
2000
2200
f, Frequency (MHz)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 1.2 k)
MC13820 Technical Data, Rev. 1.1 8 Freescale Semiconductor
Electrical Specifications
Input 3rd Order Intercept Point vs. Icc 1960 MHz Application Ckt.
6 4 2 0 -2 -4 -6 1.5 2.5 3.5 Icc (mA) 4.5 5.5
Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit (Rbias varied from 1.2 k to 3 k)
Input 3rd Order Intercept Point (dBm)
Input 3rd Order Intercept Point vs. Icc 2140 MHz Application Circuit
6 5 4 3 2 1 0 -1 -2 1 2 3 Icc (mA) 4 5 Input 3rd Order Intercept Point, IIP3 (dBm)
Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit (Rbias varied from 1.2 k to 3 k)
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 9
Application Information
3
Application Information
The MC13820 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain and Enable pins. The logic truth table is given in Table 5. In these application examples a balance is made between the competing RF performance characteristics of ICC, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For a particular application or spec requirement, the matching can be changed to achieve enhanced performance of one parameter at the expense of other parameters. Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 k and 2 k, see Table 6, Table 7, Table 8, and Table 9. These two current drain states offer variation in intercept point, gain, and noise figure. Measurements are made at a bias of VCC = 2.75 V. Freq. spacing for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dB. The board loss corrections for these boards are: Input 0.16 dB, Output 0.2 dB. Gain and NF results incorporate these corrections in order to better reflect the actual performance of the device.
3.1
1575 MHz Application
This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 6. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
MC13820 Technical Data, Rev. 1.1 10 Freescale Semiconductor
Application Information
NC 12 NC 11
NC 10
NC C5 .01uf Vcc1 C2 1 pf C6 33 pf
1
MC13820 1575 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 680 C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
L2 5.6 nH
4
5
6
L1 5.6 nH
LNA IN C1 22pF
Figure 9. 1575 MHz LNA Application Schematic Table 6. Typical 1575 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 620 Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass f G OIP3 IIP3 P1dBout P1dBin -8.0 10 dBm 2.0 25.5 dBm 20 20.8 dBm 18 -4.7 dBm 1575.42 MHz dB Symbol Min Typ Max Unit
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 11
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1= 2.0 k, R2 = 680 Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass f G OIP3 IIP3 P1dBout P1dBin -10 8.2 dBm 0.5 27 dBm 18.7 21.7 dBm 18 -5.0 dBm 1575.42 MHz dB S11 S21 S12 S22 -13.9 -6.8 -23.7 -4.4 dB 18.2 -4.1 dB -15.5 -8.1 dB Symbol G NF ICC 4.45 4.0 1.2 620 mA A k dB 1.25 4.8 18.5 -3.4 dB Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 12 Freescale Semiconductor
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 S21 S12 S22 -10.8 -7.2 -22.9 -4.3 dB 17.9 -4.1 dB -13.5 -9.0 dB Symbol G NF ICC 2.8 4.0 2.0 680 mA A k dB 1.25 4.8 18.1 -3.6 dB Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 13
Application Information
3.2
1960 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 17 dBm with S11 better than -10 dB and S22 better than -10 dB at 1960 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 7. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
NC 12 NC 11 NC 10
NC C5 .01uf Vcc1 C2 0.9pf L2 2.7 nH C6 33 pf
1
MC13820 1960 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 3.3 k C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
4
5
6
L1 4.3 nH
LNA IN C1 33pF
Figure 10. 1960 MHz LNA Application Schematic Table 7. Typical 1960 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G OIP3 IIP3 5.5 25 22 20.5 dBm 16 -4.5 dBm 1960 MHz dB Symbol Min Typ Max Unit
MC13820 Technical Data, Rev. 1.1 14 Freescale Semiconductor
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 2.0 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G OIP3 IIP3 1.0 25 17.4 21 dBm 16.4 -4.0 dBm 1960 MHz dB S11 S21 S12 S22 -14.6 -6.3 -21.7 -4.2 dB 16.6 -3.8 dB -9.7 -8.7 dB Symbol P1dBout P1dBin G NF ICC 4.45 10 1.2 3.3 mA A k k dB 1.26 2.5 16.8 -3.7 dB -6.0 dBm 10.5 dBm Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 15
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 S21 S12 S22 -25 -7.8 -21.1 -4.0 dB 16.6 -3.9 dB -9.2 -9.8 dB Symbol P1dBout P1dBin G NF ICC 2.8 4.0 2.0 3.3 mA A k k dB 1.25 4.7 16.5 -3.7 dB -6.0 dBm 10.4 dBm Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 16 Freescale Semiconductor
Application Information
3.3
2140 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 8. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
NC 12 NC 11 NC 10
NC C5 .01uf Vcc1 C2 0.9pf L2 2.7 nH C6 33 pf
1
MC13820 2140 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 3.3 k C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
4
5
6
L1 4.3 nH
LNA IN C1 33pF
Figure 11. 2140 MHz LNA Application Schematic Table 8. Typical 2140 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G OIP3 IIP3 5.0 20 20.7 16.4 dBm 15.7 -3.4 dBm 2140 MHz dB Symbol Min Typ Max Unit
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 17
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 2.0 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G OIP3 IIP3 3.5 24.5 19.7 21.3 dBm 15.7 -3.2 dBm 2140 MHz dB S11 S21 S12 S22 -12.5 -6.1 -22.2 -4.5 dB 16.5 -4.1 dB -8.5 -8.9 dB Symbol P1dBout P1dBin G NF ICC 4.45 10 1.2 3.3 mA A k k dB 1.49 3.4 14.8 -3.4 dB -5.0 dBm 10.7 dBm Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 18 Freescale Semiconductor
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 S21 S12 S22 -12.1 -14.6 -20.9 -3.3 dB 15.5 -3.0 dB -13.7 -17.1 dB Symbol P1dBout P1dBin G NF ICC 2.8 10 2.0 3.3 mA A k k dB 1.3 3.2 14.8 -3.5 dB -5.0 dBm 10.7 dBm Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 19
Application Information
3.4
2400 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 9. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
NC 12 NC 11 NC 10
NC C5 .01uf Vcc1 C2 0.6pf L2 2.4 nH C6 33 pf
1
MC13820 2400 MHz LNA
9
Gnd
2
Logic
8
Gain
LNA OUT
3 R2 3.3 k C3 33 pf C4 .01uf R1 2k Vcc3 Rbias
7
Enable
4
5
6
L1 2.7 nH
LNA IN C1 33pF
Figure 12. 2400 MHz LNA Application Schematic Table 9. Typical 2400 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic R1 = 1.2 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G OIP3 IIP3 7.0 22 21 19 dBm 14 -3.8 dBm 2400 MHz dB Symbol Min Typ Max Unit
MC13820 Technical Data, Rev. 1.1 20 Freescale Semiconductor
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass R1 = 2.0 k, R2 = 3.3 k Frequency Power Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass Input Third Order Intercept Point High Gain Bypass f G OIP3 IIP3 4.0 24 18.5 20 dBm 14 -3.6 dBm 2400 MHz dB S11 S21 S12 S22 -11 -7.0 -20.2 -4.0 dB 14.5 -4.1 dB -8.5 -8.9 dB Symbol P1dBout P1dBin G NF ICC 4.45 10 1.2 3.3 mA A k k dB 1.55 3.8 14 -3.8 dB -4.0 dBm 10.7 dBm Min Typ Max Unit dBm
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 21
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Out Ref P1dB High Gain Bypass In Ref P1dB High Gain Bypass Insertion Gain High Gain Bypass Noise Figure High Gain Bypass Current Drain High Gain Bypass Rbias R1 Value Rstability R2 Value Input Return Loss High Gain Bypass Gain High Gain Bypass Reverse Isolation High Gain Bypass Output Return Loss High Gain Bypass S11 Symbol P1dBout P1dBin G NF ICC 2.8 10 2.0 3.3 -10 -9.7 14 -3.6 -20 -3.8 -10 -9.1 mA A k k dB 1.49 4.2 14 -4.0 dB -4.0 dBm 10 dBm Min Typ Max Unit dBm
S21
dB
S12
dB
S22
dB
MC13820 Technical Data, Rev. 1.1 22 Freescale Semiconductor
Printed Circuit Board
4
Printed Circuit Board
C2
L2 R2 C3 C4 R1
Q1
L1 C1
MBC1 3720/21 V2R1
NOT E: COMPON EN TS C5 AND C6 ARE LOCATED ON THE BACK OF THE BOARD
Figure 13. Front Side
C5 C6
Figure 14. Back Side
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 23
Printed Circuit Board
Table 10. Bill of Materials
Component 1575 MHz C1 C2 C3 C4 C5 C6 L2 L1 R1 R2 Q1 1960 MHz C1 C2 C3 C4 C5 C6 L1 L2 R1 R2 Q1 2140 MHz C1 C2 C3 C4 C5 C6 L1 L2 33 pF 0.9 pF 33 pF .01 F .01 F 33 pF 4.3 nH 2.7 nH 402 402 402 402 402 402 1005 1005 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match 33 pF 0.9 pF 33 pF .01 F .01 F 33 pF 4.3 nH 2.7 nH 1.2 or 2 k 3.3 k MC13820 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft Coilcraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match Bias for 4.45 or 2.8 mA Stability 22 pF 1.0 pF 33 pF .01 F .01 F 33 pF 5.6 nH 5.6 nH 1.2 or 2 k 680 MC13820 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Output match Input match Bias for 4.45 or 2.8 mA Stability Value Case Manufacturer Comments
MC13820 Technical Data, Rev. 1.1 24 Freescale Semiconductor
Printed Circuit Board
Table 10. Bill of Materials (continued)
Component R2 R1 Q1 2400 MHz C1 C2 C3 C4 C5 C6 L1 L2 R2 R1 Q1 33 pF 0.6 pF 33 pF .01 F .01 F 33 pF 2.7 nH 2.4 nH 1.2 or 2 k 3.3 k MC13820 402 402 402 402 402 402 1005 1005 402 402 QFN-12 Murata Taiyo Yuden Murata Murata Murata Murata CoilCraft CoilCraft KOA KOA Freescale Input match Output match RF bypass Low freq bypass Low freq bypass RF bypass Input match Output match Bias for 4.45 or 2.8 mA Stability Value 3.3 k 1.2 or 2 k MC13820 Case 402 402 QFN-12 Manufacturer KOA KOA Freescale Comments Stability Bias for 4.45 or 2.8 mA
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 25
Scattering Parameters
5
Scattering Parameters
Table 11. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain = 2.75 V, Enable = 2.75 V, Rbias resistor R1 = 2 k), ICC = 2.6 mA f GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.852 0.836 0.803 0.814 0.782 0.772 0.752 0.718 0.672 0.688 0.695 0.686 0.653 0.661 0.646 0.639 0.628 0.608 0.61 0.609 0.637 0.57 0.536 0.515 0.506 0.489 0.483 0.487 0.488 -29.22 -32.9 -36.02 -42.84 -42.6 -45.55 -47.28 -50.24 -52.29 -49.98 -53.95 -54.86 -57.19 -57.81 -60.4 -62.48 -61.9 -63.13 -63.96 -65.96 -69.48 -74.63 -75.03 -75.6 -75.28 -73.7 -74.54 -76.91 -78.25 |S11| 7.029 7.279 7.034 6.856 6.687 6.29 6.242 6.082 5.696 5.662 5.499 5.348 5.334 5.098 5.035 4.766 4.575 4.529 4.366 4.251 4.307 4.168 3.933 3.819 3.665 3.572 3.523 3.495 3.484 S21 142.03 137.43 133.48 127 125.21 122.03 116.95 114.12 112.14 107.49 104.8 101.62 97.81 95.37 90.65 86.29 86.75 82.12 79.31 77.33 75.4 68.94 65.73 62.83 61.56 60.5 58.09 55.25 51.93 |S11| 0.021 0.024 0.027 0.029 0.031 0.034 0.036 0.039 0.04 0.043 0.044 0.047 0.05 0.052 0.058 0.058 0.059 0.06 0.063 0.067 0.072 0.073 0.075 0.074 0.074 0.07 0.07 0.075 0.082 S12 75.16 73.13 70.95 66.71 68.53 65.83 65.66 64.76 61.29 61.9 60.95 60.42 59.47 60.14 56 52.65 51.95 52.38 53.62 51.2 50.86 46.36 42.72 42.14 39.24 39.17 43.49 46.63 45.9 |S11| 0.956 0.946 0.966 0.887 0.924 0.898 0.897 0.912 0.943 0.882 0.865 0.866 0.892 0.863 0.844 0.818 0.8 0.78 0.779 0.777 0.811 0.756 0.716 0.697 0.683 0.702 0.716 0.714 0.699 S22 -14.42 -15.76 -19.49 -17.77 -22.03 -23.58 -25.56 -26.44 -30.51 -35.18 -35.67 -36.55 -41.25 -42.78 -46.94 -49.01 -50.61 -51.67 -52.93 -54.38 -57.38 -63.02 -62.94 -64.16 -63.26 -63.69 -66.71 -70.44 -74.6
MC13820 Technical Data, Rev. 1.1 26 Freescale Semiconductor
Scattering Parameters
Table 12. Bypass Mode Scattering Parameters
((VCC1 and VCC3 = 2.75V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1= 2 k), ICC = 3.0 A) f (GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.549 0.511 0.47 0.458 0.434 0.421 0.404 0.384 0.36 0.362 0.367 0.363 0.35 0.355 0.335 0.332 0.322 0.32 0.319 0.323 0.354 0.317 0.296 0.284 0.283 0.274 0.269 0.265 0.261 -51.13 -53.94 -55.73 -59.65 -58.46 -59.33 -59.6 -61.06 -62.48 -59.49 -60.21 -60.18 -63.26 -63.18 -66.36 -65.87 -63.97 -63.46 -63.28 -63.96 -65.66 -73.59 -74.61 -74.6 -72.89 -72.04 -74.74 -77.34 -76.71 |S11| 0.578 0.596 0.608 0.615 0.624 0.629 0.634 0.633 0.638 0.638 0.639 0.64 0.645 0.639 0.64 0.64 0.64 0.639 0.632 0.627 0.64 0.637 0.622 0.616 0.616 0.618 0.618 0.609 0.603 S21 17.83 13.17 8.45 3.3 1.11 -2.37 -5.19 -8.02 -10.97 -13.09 -15.43 -17.77 -20.27 -22.63 -24.42 -26.93 -28.95 -31.11 -33.88 -35.14 -36.78 -40.56 -42.77 -44.14 -45.7 -47.38 -50.21 -52.62 -54.36 |S11| 0.583 0.6 0.614 0.617 0.628 0.635 0.639 0.639 0.641 0.643 0.643 0.645 0.649 0.643 0.643 0.645 0.644 0.642 0.638 0.633 0.645 0.643 0.629 0.621 0.619 0.622 0.623 0.615 0.607 S12 18.83 14.15 10.08 5.12 2.52 -0.96 -3.8 -6.66 -9.5 -11.89 -14.26 -16.58 -19.08 -21.39 -23.2 -25.56 -27.79 -30.01 -32.07 -33.64 -35.11 -38.92 -41.1 -42.65 -43.94 -45.84 -48.62 -51.03 -52.96 |S11| 0.578 0.542 0.524 0.455 0.453 0.42 0.407 0.394 0.388 0.374 0.353 0.335 0.348 0.327 0.342 0.324 0.309 0.294 0.279 0.274 0.297 0.282 0.245 0.23 0.236 0.245 0.238 0.212 0.194 S22 -41.21 -42.25 -45.13 -43.82 -46.74 -48.02 -48.56 -47.62 -49.7 -53.61 -53.66 -53.3 -53.86 -54.83 -57.82 -60.95 -63.15 -64.43 -64.25 -62.49 -62.47 -72.82 -73.08 -70.36 -67.03 -68.8 -75.51 -77.5 -77.94
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 27
Scattering Parameters
Table 13. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain and Enable = 2.75 V, Rbias resistor R1 = 1.2 k, ICC = 4.8 mA) f (GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.784 0.765 0.721 0.724 0.692 0.678 0.662 0.626 0.576 0.594 0.599 0.594 0.56 0.568 0.548 0.546 0.543 0.532 0.527 0.529 0.551 0.485 0.454 0.434 0.433 0.436 0.437 0.437 0.433 -32.04 -35.9 -39 -45.16 -44.87 -47.17 -48.64 -51.75 -53.11 -49.59 -52.85 -54.14 -56.18 -57.13 -58.62 -59.79 -59.25 -59.9 -61.63 -62.78 -67.21 -70.76 -71.28 -70.94 -67.82 -66.18 -68.3 -72.51 -73.15 |S11| 10.275 10.162 9.646 9.184 8.773 8.23 7.98 7.638 7.185 6.972 6.691 6.444 6.34 6.029 5.885 5.568 5.318 5.189 4.979 4.816 4.839 4.649 4.382 4.207 4.048 3.936 3.847 3.81 3.767 S21 132.74 127.59 122.89 116.28 114.36 110.64 106.21 103.36 100.91 96.71 93.81 90.92 87.3 85.12 80.96 76.96 76.8 72.95 70.13 68.35 66.22 60.62 57.65 55.39 54.44 52.8 50.72 48.36 45.48 |S11| 0.021 0.022 0.025 0.027 0.029 0.033 0.034 0.037 0.039 0.041 0.042 0.044 0.049 0.05 0.054 0.056 0.057 0.059 0.062 0.064 0.072 0.072 0.074 0.072 0.068 0.069 0.072 0.078 0.082 S12 72.91 71.83 68.97 67.34 67.52 67.56 66.62 64.27 63.47 62.78 62.14 62.34 60.88 60.42 57.9 56.61 54.83 54.79 53.59 53.44 52.3 47.22 44.14 42.21 41.81 43.96 47.68 46.81 45.71 |S11| 0.92 0.907 0.923 0.842 0.877 0.846 0.845 0.858 0.893 0.835 0.816 0.817 0.843 0.817 0.798 0.774 0.761 0.742 0.741 0.743 0.768 0.715 0.68 0.666 0.669 0.674 0.684 0.687 0.676 S22 -15.77 -16.82 -20.31 -18.21 -22.39 -23.69 -25.47 -25.98 -29.67 -34.46 -34.49 -35.3 -39.86 -41.18 -45.47 -46.98 -48.63 -49.56 -50.7 -52 -55.57 -60.12 -60.09 -60.36 -60.12 -61.04 -63.24 -66.49 -70.55
MC13820 Technical Data, Rev. 1.1 28 Freescale Semiconductor
Scattering Parameters
Table 14. Bypass Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1 = 1.2 k, ICC = 3 A) f (GHz) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 S11 |S11| 0.556 0.514 0.475 0.459 0.427 0.412 0.391 0.379 0.368 0.358 0.352 0.346 0.341 0.334 0.329 0.319 0.308 0.299 0.293 0.285 0.279 0.274 0.267 0.27 0.264 0.261 0.26 0.26 0.265 -44.11 -46.8 -49.46 -50.05 -50.66 -51.99 -52.85 -53.91 -53.94 -54.86 -55.36 -55.58 -55.61 -56.07 -56.92 -57.96 -57.61 -57.89 -59.25 -60.49 -62.48 -64.02 -66.58 -68.28 -70.53 -72.44 -73.31 -73.49 -73.26 |S11| 0.573 0.591 0.6 0.618 0.623 0.633 0.635 0.637 0.638 0.64 0.641 0.641 0.641 0.638 0.635 0.636 0.64 0.641 0.64 0.636 0.636 0.634 0.629 0.623 0.618 0.617 0.616 0.613 0.61 S21 20.27 15.11 10.38 6.77 3.34 -0.34 -3.09 -6.45 -8.92 -11.49 -14.09 -16.37 -18.68 -20.97 -23.12 -24.75 -26.81 -29.13 -31.4 -33.55 -35.59 -37.84 -39.74 -42.19 -43.48 -45.42 -47.61 -49.49 -52.15 |S11| 0.573 0.591 0.599 0.617 0.621 0.632 0.634 0.636 0.638 0.639 0.64 0.641 0.641 0.639 0.633 0.636 0.64 0.64 0.642 0.636 0.635 0.633 0.63 0.623 0.616 0.616 0.615 0.613 0.61 S12 20.39 15.3 10.66 6.98 3.51 -0.19 -2.98 -6.18 -8.66 -11.33 -13.92 -16.17 -18.47 -20.85 -22.91 -24.45 -26.59 -28.92 -31.04 -33.11 -35.51 -37.69 -39.66 -42.06 -43.19 -45.19 -47.35 -49.26 -51.84 |S11| 0.595 0.549 0.511 0.479 0.462 0.43 0.421 0.395 0.384 0.374 0.358 0.345 0.334 0.321 0.312 0.314 0.306 0.295 0.291 0.277 0.272 0.258 0.247 0.232 0.241 0.241 0.227 0.209 0.179 S22 -42.94 -43.78 -43.02 -46.66 -47.17 -49.25 -49.35 -50.53 -51.37 -52.64 -53.9 -54.87 -56.07 -56.45 -56.2 -57.47 -59.76 -61.28 -62.5 -62.84 -65.72 -67.26 -67.95 -68.55 -64.77 -69.24 -74.2 -76.39 -78.56
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 29
Scattering Parameters
Table 15. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 1.2 k, ICC = 4.8 mA) f (GHz) 1 1.575 1.9 2.14 2.4 NFmin (dB) 1.11 0.99 0.96 0.96 0.97 Gamma Opt Mag 0.27 0.29 0.30 0.30 0.30 Ang 25.3 40.8 46.9 50.1 54.0 Rn () 14 13 12.5 12.5 12 rn () 0.28 0.26 0.25 0.25 0.24 GNF (dB) 26.21 22.63 20.83 19.8 18.3
K
0.63 0.74 0.70 0.78 0.89
Table 16. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 2 k, ICC = 2.8 mA) f (GHz) 1 1.575 1.9 2.14 2.4 NFmin (dB) 1.16 1.02 0.97 0.96 0.95 Gamma Opt Mag 0.23 0.35 0.37 0.37 0.37 Ang 27.6 39.0 46.2 49.7 54.1 Rn () 15.5 15 14 14 13.5 rn () 0.31 0.3 0.28 0.28 0.27 GNF (dB) 26.09 22.57 20.81 19.79 18.3
K
0.48 0.56 0.53 0.61 0.77
MC13820 Technical Data, Rev. 1.1 30 Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 1.575 NFmin 1.02 Gamma-Opt 0.30/_38.2 Rn () 13.5 K 0.74
Figure 15. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 k
(shaded regions are potentially unstable) f(GHz) 1.575 NFmin 0.97 Gamma-Opt 0.34/_39.1 Rn () 17.0 K 0.56
Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 k
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 31
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 1.9 NFmin 0.96 Gamma-Opt 0.30/_46.9 Rn () 12.5 K 0.68
Figure 17. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 k
(shaded regions are potentially unstable) f(GHz) 1.9 NFmin 0.97 Gamma-Opt 0.37/_46.2 Rn () 14.0 K 0.50
Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 k
MC13820 Technical Data, Rev. 1.1 32 Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 2.1 NFmin 0.96 Gamma-Opt 0.30/_50.1 Rn () 12.5 K 0.76
Figure 19. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
(shaded regions are potentially unstable) f(GHz) 2.1 NFmin 0.96 Gamma-Opt 0.37/_49.7 Rn () 14.0 K 0.58
Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 33
Scattering Parameters
(shaded regions are potentially unstable) f(GHz) 2.3 NFmin 0.96 Gamma-Opt 0.30/_52.8 Rn () 12.0 K 0.85
Figure 21. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 k
(shaded regions are potentially unstable) f(GHz) 2.3 NFmin 0.95 Gamma-Opt 0.38/_53 Rn () 13.5 K 0.70
Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 k
MC13820 Technical Data, Rev. 1.1 34 Freescale Semiconductor
Packaging
6
Packaging
LASER MARK FOR PIN 1 IDENTIFICATION IN THIS AREA
3
2X
A G
M 0.1 C 1.0 1.00 0.8 0.75 (0.24) (0.5) DETAIL G
VIEW ROTATED 90 CLOCKWISE
0.1 C 3
0.05 C
5
0.05 0.00
2X
C
SEATING PLANE
B
0.1 C
M
0.1 C A B 1.25 0.95 0.1 0.05
12X M M DETAIL M PIN 1 IDENTIFIER
12
CAB C
9
10
EXPOSED DIE ATTACH PAD
8X
(1.177)
4X
0.3 0.18
(45)
1
1.25 0.95
0.1 C A B
12X
7
3
0.065 0.015
3X
(R0.09) 4X (0.18) DETAIL N
12X
0.75 0.5
6
4
N 0.5
CORNER CONFIGURATION
8X
4
VIEW M-M
NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. THE COMPLETE JEDEC DESIGNATOR FOR THIS PACKAGE IS: HF-PQFP-N. 4. CORNER CHAMFER MAY NOT BE PRESENT. DIMENSIONS OF OPTIONAL FEATURES ARE FOR REFERENCE ONLY. 5. COPLANARITY APPLIES TO LEADS, CORNER LEADS, AND DIE ATTACH PAD. 2X
DETAIL S
(90)
4X
(0.25)
2X
0.39 0.31
8X
(0.777) 0.1 0.0
DETAIL M
PIN 1 BACKSIDE IDENTIFIER
DETAIL S
PIN 1 BACKSIDE IDENTIFIER
Figure 23. Outline Dimensions for QFN-12 (Case Outline 1345-01, Issue A)
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 35
Product Documentation
7
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com. Table 17 summarizes revisions made to this document since Rev. 1.0 was released.
Table 17. Revision History
Location Section 1.1, "Features", on page 1 Table 1 Maximum Ratings Updated text. Updated Thermal Resistance, Junction to Case and added Thermal Resistance, Junction to Ambient, 4 layer board. Revision
Table 2 Recommended Operating Conditions Updated Logic Voltage. Table 5 Truth Table Table 6 Typical 1575 MHz LNA Demo Board Performance Table 7 Typical 1960 MHz LNA Demo Board Performance Table 8 Typical 2140 MHz LNA Demo Board Performance Table 9 Typical 2400 MHz LNA Demo Board Performance Table 10 Bill of Materials Added notes. Updated Current Drain Typ numbers. Updated Current Drain. Updated to R1 = 2.0 k, R2 = 3.3 k. Updated to R1 = 2.0 k, R2 = 3.3 k. Updated 1575 MHz R1, 1960 MHz R1, 2140 MHz R1, and 2400 MHz R2.
Figure 13 Front Side of Printed Circuit Board Updated.
MC13820 Technical Data, Rev. 1.1 36 Freescale Semiconductor
NOTES
MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 37
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Document Number: MC13820/D Rev. 1.1 09/2005

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