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 bq O@ 1/2- |/ NeAE3/4
PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER GENERAL DESCRIPTION \aO-z
The M7615 is a low power PIR ( passive infra-red ) controller with hi level output , paired with M3766 for battery power door bell/ relay /alarm application. With special noise immunity technique , M7615 is the most stable PIR controller you can find on the market. More than this , there are few components needed in its application circuit which can reduce material cost and increase competitive.
FEATURES ~So
E High noise immunity. E Low stand-by current < 90uA E Drive either Relay. E Adjustable play on duration and latch duration. E On-chip voltage regulator. E 20 second warm-up. E CDS input conditionally. E 14 pin DIP or SOP package.
APPLICATIONS ~AI
E PIR light controller , Motion Detector , Alarm system , Auto-door bell.
PIN ASSIGNMENT
M7615-P14
VDD 1 14 RELAY UOU1 II1 TE VSS CDS RTX 7 8 NII1 II2 UOU2 RT1
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PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER PIN DESCRIPTION
Pin Name VDD TE VSS CDS I I I/O Description Operation voltageG 5VA Stand by currentG 80~90uA TE = 1M[ System ground. Connect to a CDS for inhibit , when Vinhi = 0 disable ,Vinhi = 1 enable trigger Delay timer oscillator input The delay time of receiving PIR signal to trigger Encoder or a high signal to trigger relay. The range forG RTX=2 K[ ~ 5 M[ CTX=100P~0.01UF FOR 100P or 0.01uf delay time=45000 R*C FOR 1000P delay time=35000 R*C Delay TimeG 20 ms ~ 2250s ExG CTX=100pA RTX=680K[A Delay Time=3.1s CTX=1000pA RTX=100K[A Delay Time=3.5s CTX=0.01ufA RTX=10K[A Delay Time=4.5s Latch timer oscillator input The latch time of the range forG RTI=100 K[ ~ 1 M[ CTI=0.1UF(fix) Contain Time=35 R*C Contain timeG > 0.5s ~ ExG CTI=0.1ufA RTI=1MA Contain Time=3.5s [ 2 nd stage OP amp output. 2 stage OP amp negative input. 1 stage OP amp positive input. 1 stage OP amp negative input. To drive relayA active high. 1st stage OP amp output.
st st nd
Pin No. 1 4 5 6
RTX
I
7
RTI
I
8
UOU2 II2 NII1 II1 RELAY UOU1
O I I I O I
9 10 11 12 13 14
Delay timing and Latch timing oscillator input pin, connect to external RC to obtain desired delay duration. Variable delay(latch) duration can be obtained by selecting various values of RC or using a variable resistor. 2/7
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PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER
RD
CD
Fig.1
Timing Oscillator
The PIR signal amplifier needs a warm up period after power-on, so during this time the input should be disabled
OP1O OP1P OP1N OP2O OP2N OP2P VCN OP2 OP1 comparator VCP
Fig.2
PIR Amplifier Block Diagram
TIMING RELATIONSHIPG
0.7 VDD Signal on UOU2 Pin 0.5 VDD 0.3 VDD
Window detector Pulse width detector
RELAY T T1 T2
T1G Delay Time
T2G Latch ( Contain )Time
TG Warm Up Time (20s ) O
BLOCK DIAGRAM
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PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER
M7615
VDD TE
RTI
OSC
LATCH TIMMER
VDD RELAY CONTROL RTX OSC VDD DELAY TIMMER LOGIC
CDS
CDS VDD 0.3VDD WINDOW DETECTOR
+
REF. VOLTAGE 0.7VDD
+
PULSE WIDTH DETECTOR
0.5VDD
NII1 PIR
+
+
II1 UOU1 NII2
II2 UOU2
ABSOLUTE MAXIMUM RATING
Parameter Sym. 4/7 Rating Unit
2005-08-01
(TA=25J )
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PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER
Power Supply VDD With Respect to VSS Voltage On Any Pin Operating Temperature Storage Temperature VDD - VSS Top 5.6 -0.3 to 5.6 -20 to 70 -65 to 150 J J V V
ELECTRICAL CHARACTERISTICS
Characteristics Supply Voltage Stand by Current Operating Current Stable Voltage Source Current of VREF Ripple of VREF Input and Output Regulation of VREF Time Delay Frequency Time Latch Frequency CDS Operating Trigger CDS Operating Trigger CDS Source Current CDS Output Source Current CDS Output Sink Current Relay Source Current Relay Sink Current Relay Operating Voltage Sym. VDD IST IDD VREF IREF Min. 4.2 X 1.8 2.1 200 X X 15 15 1.3 0.6 2.6 9 11.6 X X 13.1 Typ. 5 X X 2.5 X X X 16 16 1.7 0.9 3.5 10.4 13 X X X Max. 5.5 100 2.5 2.75 X 0.5 0.3% 17 17 2.1 1.1 4.4 17.4 21 10 10 18.8 Unit V uA mA V uA mV KHz Hz V V uA mA mA mA mA V Conditions
VDD > 4.2V
FRTX FRTI VT + V TICDS ISOURCE ISINK IRS IRSINK VRO
For Delay 3s For Contain 3s
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PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER APPLICATION DIAGRAM N|OqoI
(A)
VDD
M7615P
RELAY 1 14 UOU1 C1 R1 R6 R4 C4 PIR
R II1 TE R5 VSS UOU2 CDS CDS RTX 7 8 RTI NII1 II2
VDD
R2 C2
C5 R3
C3
C1 C2 C3 C4 C5 R
0.033uF 0.033uF 33uF/16V 0.01uF 33uF/16V 1M[
R1 R2 R3 R4 R5 R6
820K[ 820K[ 15K[ 15K[ 680K[ 47 K[
VDD
VDD1 1K VDD 5.1V 10g / 50V 2.2K 12V
M3766
Z 1 16 LO VDD1 Rz
K6 X K5 Y K4 BB K3 BZ K2 100[ K1 VSS 8 9 POR 882 100[ 882 600[ 945 Rosc 772 BUZZER 945 772
*ALARMG M3766
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PIR CONTROLLER
MOSDESIGN SEMICONDUCTOR CORP.
M7615 DC PIR CONTROLLER
(B)
VDD
4002 VDD
LOAD
M7615P
RELAY 1 14 UOU1
R6 945 C1 R1 R7 R4 C4 PIR
R II1 TE R5 VSS CDS CDS RTX 7 8 RTI NII1 II2 UOU2
VDD
R2 C2
C5 R3
C3
C1 C2 C3 C4 C5 R
0.033uF 0.033uF 33uF/16V 0.01uF 33uF/16V 1M[
R1 R2 R3 R4 R5 R6 R7
820K[ 820K[ 15K[ 15K[ 680K[ 22 K[ 47 K[
* All specs and applications shown above subject to change without prior notice. (HWqWN|O(R)aeE oI ,1/2qow|ae-x )
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2005-08-01


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