View IXTA110N055P_455344.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P IXTA 110N055P IXTP 110N055P
VDSS ID25
RDS(on)
= 55 V = 110 A = 13.5 m
TO-3P (IXTQ)
Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Tranisent TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C
Maximum Ratings 55 55 20 30 110 75 250 110 30 1.0 10 330 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns
G G DS (TAB) G D S (TAB)
TO-220 (IXTP)
TO-263 (IXTA)
W C C C C C
G = Gate S = Source
S (TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220)
300 260
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Md Weight
1.13/10 Nm/lb.in. 5.5 4 3 g g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 55 2.5 5.0 100 25 250 11 13.5 V V nA A A m
Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
DS99182A(05/05)
IXTA 110N055P IXTP 110N055P IXTQ 110N055P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 23 36 2210 VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 550 27 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 (External) 53 66 45 76 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 33 S pF pF pF ns ns ns ns nC nC nC 0.38 K/W (TO-3P) (TO-220) 0.21 0.25 K/W K/W TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 110 250 1.5 A A V TO-220 (IXTP) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 25 V 120 1.4
ns C
TO-263 (IXTA) Outline
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
Pins:
1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXTA 110N055P IXTP 110N055P IXTQ 110N055P
Fig. 1. Output Characteristics @ 25C
110 100 90 80 VGS = 10V 9V 220 200 180 160 9V VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
60 50 40 30 20 10 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 6V 7V
I D - Amperes
70
8V
140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 5V 8 9 10 6V 7V 8V
V D S - Volts Fig. 3. Output Characteristics @ 150C
110 100 90 80 VGS = 10V 9V 2.2 2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
I D - Amperes
70 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2
8V
1.8 1.6 1.4 I D = 55A 1.2 1 0.8 I D = 110A
7V
6V
5V
2.4
2.8
-50
-25
0
25
50
75
100
125
150
175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
2.8 2.6 2.4 100 120
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 100 125 150 175 200 225 250 0 -50 -25 0 25 50 75 100 125 150 175 VGS = 15V TJ = 25C 20 VGS = 10V TJ = 175C
I D - Amperes
80
60
40
I D - Amperes
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P IXTQ 110N055P
Fig. 7. Input Adm ittance
250 225 200 175 TJ = -40C 25C 150C 50 45 40
Fig. 8. Transconductance
g f s - Siemens
35 30 25 20 15 10 5 0
TJ = -40C 25C 150C
I D - Amperes
150 125 100 75 50 25 0 2 3 4 5 6 7 8 9 1 0 1 1
0
50
100
150
200
250
300
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 8 7 VDS = 22.5V I D = 55A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
200
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80
150
100
50
0
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000
Fig. 11. Capacitance
10000
Capacitance - picoFarads
C iss
R DS(on) Limit
25s 100s
I D - Amperes
100
1000 C oss
1ms 10ms DC TJ = 175C TC = 25C 1
10 C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40
1
10
100
IXYS reserves the right to change limits, test conditions, and dimensions.
V DS - Volts
V D S - Volts
IXTA 110N055P IXTP 110N055P IXTQ 110N055P
Fig. 13. Maximum Transient Thermal Resistance
1.00
R( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
(c) 2005 IXYS All rights reserved

▲Up To Search▲

Price & Availability of IXTA110N055P

	To Download IXTA110N055P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .