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| SI9939DY Vishay Siliconix Complimentary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Ch l 30 rDS(on) (W) 0.05 @ VGS = 10 V 0.07 @ VGS = 6 V 0.08 @ VGS = 4.5 V 0.10 @ VGS = -10 V 0.12 @ VGS = -6V 0.16 @ VGS = -4.5 V ID (A) "3.5 "3 "2.5 "3.5 "3 "2.5 P-Channel P Ch l -30 30 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET D2 D2 G2 G1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "3.5 "2.8 "20 1.7 2.0 1.3 P-Channel -30 "20 "3.5 "2.8 "20 -1.7 Unit V A W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70146 S-00652--Rev. G, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P- Channel 62.5 Unit _C/W 1 SI9939DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -24 V, VGS = 0 V VDS = 15 V, VGS = 0 V, TJ = 70_C VDS = -15 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V On-State Drain Currentb OS DiC ID(on) VDS v -5 V, VGS = -10 V VDS w 5 V, VGS = 4.5 V VDS v -5 V, VGS = -4.5 V VGS = 10 V, ID = 3.5 A VGS = -10 V, ID = 3.5 A OS Ri Drain-Source On-State Resistanceb DiS VGS = 6 V, ID = 3 A rDS(on) VGS = - 6 V, ID = 3 A VGS = 4.5 V, ID = 2.5 A VGS = -4.5 V, ID = 2 A Forward Transconductanceb gfs VDS = 15 V, ID = 3.5 A VDS = -15 V, ID = -3.5 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 3.5 -3.5 0.04 0.074 0.045 0.090 0.054 0.115 9 6 0.75 -0.75 1.2 -1.2 V 0.05 0.10 0.07 0.12 0.08 0.16 S W A N-Ch P-Ch 1.0 -1.0 "100 1 -1 5 -5 mA A nA V Symbol Test Condition Min Typa Max Unit Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Channel N Ch l VDS = 10 V VGS = 10 V ID = 3.5 A V, V, 35 Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -10 V ID = -3.5 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel N Ch l VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 3.5 A, di/dt = 100 A/ms N-Ch P-Ch 14 14.5 1.9 2.7 2.8 3.5 10 11 10 11 26 30 10 12 60 40 30 30 40 40 50 50 50 50 120 100 ns 35 35 nC C Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70146 S-00652--Rev. G, 27-Mar-00 SI9939DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 4V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 N CHANNEL Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C -55_C 0 4 3V 2, 1 V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1400 1200 r DS(on) - On-Resistance ( ) 0.16 C - Capacitance (pF) 1000 800 600 400 200 0 0 6 12 18 24 30 0 6 Crss Coss Capacitance 0.12 0.08 VGS = 4.5 V 6V Ciss 0.04 10 V 0 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A V GS - Gate-to-Source Voltage (V) VGS = 10 V ID = 3.5 A 6 r DS(on) - On-Resistance ( ) (Normalized) 6 9 12 15 8 1.6 1.2 4 0.8 2 0.4 0 0 3 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70146 S-00652--Rev. G, 27-Mar-00 3 SI9939DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 I S - Source Current (A) r DS(on) - On-Resistance ( ) 0.3 0.4 N CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.2 TJ = 25_C 0.1 ID = 3.5 A 1 0 0.4 0.8 1.2 1.6 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 40 Single Pulse Power 0.2 V GS(th) - Variance (V) ID = 250 mA -0.0 Power (W) 32 24 -0.2 16 -0.4 8 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70146 S-00652--Rev. G, 27-Mar-00 SI9939DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6V 16 5V I D - Drain Current (A) 12 I D - Drain Current (A) 12 16 20 P CHANNEL Transfer Characteristics 8 4V 4 2, 1 V 3V 0 0 2 4 6 8 10 8 TC = 125_C 4 25_C -55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 1500 Capacitance 0.5 r DS(on) - On-Resistance ( ) C - Capacitance (pF) 1200 0.4 900 Coss 0.3 VGS = 4.5 V 0.2 6V 0.1 10 V 0 0 4 8 12 16 20 600 Ciss 300 Crss 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VGS = 10 V ID = 3.5 A V GS - Gate-to-Source Voltage (V) Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A 6 r DS(on) - On-Resistance ( ) (Normalized) 0 3 6 9 12 15 8 1.6 1.2 4 0.8 2 0.4 0 0 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70146 S-00652--Rev. G, 27-Mar-00 5 SI9939DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 P CHANNEL On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( ) 0.4 0.3 ID = 3.5 A 0.2 TJ = 25_C 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 40 Single Pulse Power 0.6 V GS(th) Variance (V) 32 0.4 ID = 250 A 0.2 Power (W) 24 16 0.0 8 -0.2 -0.4 -50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 Time (sec) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 6 Document Number: 70146 S-00652--Rev. G, 27-Mar-00 |
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