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| NTE5470 thru 5476 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5470 through NTE5476 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: D Uniform Low-Level Noise-Immune Gate Triggering D Low Forward "ON" Voltage D High Surge-Current Capability Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM NTE5470 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5471 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5472 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5473 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5474 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5475 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5476 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak Forward Surge Current (One Cycle, 60Hz, TJ = -40 to +100C), ITSM . . . . . . . . . . . . . . 100A Circuit Fusing (TJ = -40 to +100C, t 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2sec Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb. Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode. Electrical Characteristics: (TC = +25C unles otherwise specified) Parameter Peak Forward or Reverse Blocking Current Symbol IDRM, IRRM IGT VGT Test Conditions Rated VDRM or VRRM, TJ = +25C Gate Open TJ = +100C VD = 7V, RL = 100, Note 3 VD = 7V, RL = 100 TC = -40C TJ = +100C Forward "ON" Voltage Holding Current vTM IH ton toff ITM = 15.7A, Note 4 VD = 7V, Gate Open TC = -40C Turn-On Time (td + tr) Turn-Off Time IG = 20mA, IF = 5A, VD = Rated VDRM IF = 5A, IR = 5A, VD = Rated VDRM, dv/dt = 30V/s TC = -40C Min - - - - - - 0.2 - - - - - TJ = +100C - - Typ - - 10 - 0.75 - - 1.4 10 - 1 15 25 50 Max Unit 10 2 30 60 1.5 2.5 - 2.0 30 60 - - - - A mA mA mA V V V V mA mA s s s V/s Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC Forward Voltage Application Rate (Exponential) dv/dt Gate Open, TJ = +100C, VD = Rated VDRM Note 3. For optimum operation, i.e. faster turn-on, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum. Note 4. Pulsed, 1ms Max, Duty Cycle 1%. .431 (10.98 Max Gate Cathode .855 (21.7) Max .125 (3.17) Max .453 (111.5) Max Anode 10-32 UNF-2A |
Price & Availability of NTE5470
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