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| NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 Boca Semiconductor Corp. BSC http://www.bocasemi.com General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous IB Base Current PD Power Dissipation @ Tc=25 deg C Derate Above 25 deg C Tj, Tstg Operating And Storage Junction Temperature Range Lead Temperature for Soldering 1/16" TL from Body for 10 Seconds. Thermal Resistance Rth (j-c) Junction to Case VALUE 80 80 5.0 3.0 1.0 30 0.24 -65 to +150 260 UNIT V V V A A W W/deg C deg C deg C 4.16 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus) IC=100mA, IB=0 Collector -Emitter Sustaining Voltage ICEO VCE=40V, IB=0 Collector Cut off Current ICBO VCB=80V, IE=0 ICEX VCB=80V,VEB(0ff)=1.5V Tc=125 deg C VCB=80V,VEB(0ff)=1.5V IEBO VEB=5V, IC=0 Emitter Cut off Current hFE * IC=50mA,VCE=1V DC Current Gain IC=500mA,VCE=1V IC=1A,VCE=1V VCE(sat)* IC=1A, IB=0.1A Collector Emitter Saturation Voltage VBE(sat)* IC=1A, IB=0.1A Base Emitter Saturation Voltage VBE(on) * IC=1A,VCE=1V Base Emitter on Voltage DYNAMIC CHARACTERISTICS ft IC=250mA,VCE=10V,f=1MHz Transistors frequency Cob VCB=10V, IE=0, f=100kHz Output Capacitance hfe IC=250mA,VCE=10V,f=1kHz Small Signal Current Gain *Pulse Test PW=300us, Duty Cycle=2% MIN 80 40 30 10 3.0 25 TYP - MAX 0.5 0.1 0.1 0.5 1.0 150 0.6 1.3 1.3 100 - UNIT V mA mA mA mA mA V V V MHz pF - Continental Device India Limited Data Sheet Page 1 of 2 TO-126 (SOT-32) Plastic Package C N P B 1 2 3 A DIM A B C D E F G L M N P S MIN. MAX. S D M F E G All dimensions in mm. 1 2 3 L PIN CONFIGURATION 1. EMITTER 2. COLLEC TOR 3. BASE 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 TYP. 0.49 0.75 4.5 TYP. 15.7 TYP. 1.27 TYP. 3.75 TYP. 3.0 3.2 2.5 TYP. |
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