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SPD30N08S2L-21 OptiMOS(R) Power-Transistor
Feature
* N-Channel
Product Summary VDS R DS(on) ID 75 20.5 30
P- TO252 -3-11
V m A
* Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated
Type SPD30N08S2L-21
Package Ordering Code P- TO252 -3-11 Q67060-S7414
Marking 2N08L21
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1)
TC=25C
Symbol ID
Value 30 30
Unit A
Pulsed drain current
TC=25C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
120 240 14 6 20 136 -55... +175 55/175/56 kV/s V W C mJ
Avalanche energy, single pulse
ID=30 A , V DD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=30A, VDS=60V, di/dt=200A/s, T jmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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SPD30N08S2L-21
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.7 max. 1.1 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 75 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID=80A
Zero gate voltage drain current
V DS=75V, VGS=0V, Tj=25C V DS=75V, VGS=0V, Tj=125C
A 0.01 1 1 19.1 15.3 1 100 100 26 20.5 nA m
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=25A
Drain-source on-state resistance
V GS=10V, I D=25A
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 54A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2
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SPD30N08S2L-21
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =60V, ID =30A, VGS =0 to 10V VDD =60V, ID =30A
Symbol
Conditions min.
Values typ. 45 1600 320 130 11 15 21 15 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS 2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz
23 -
S
2130 pF 425 200 16 24 30 23 ns
VDD =40V, VGS =4.5V, ID =30A, RG =3.9
-
5.1 21 54 3.4
6.8 32 72 -
nC
V(plateau) VDD =60V, ID =30A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =30A VR =40V, IF =lS , diF /dt=100A/s
IS
TC=25C
-
0.9 52 122
30 120 1.3 65 153
A
V ns nC
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SPD30N08S2L-21
1 Power dissipation Ptot = f (TC) parameter: VGS 4 V
SPD30N08S2L-21
2 Drain current ID = f (T C) parameter: VGS 10 V
32
SPD30N08S2L-21
150
W A
120 110 24
P tot
100
ID
100 120 140 160 C 190
90 80 70 60 50 40 30 20 10 0 0 20 40 60 80
20
16
12
8
4
0 0 20 40 60 80
100 120 140 160 C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0.01 , TC = 25 C
10
3 SPD30N08S2L-21
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPD30N08S2L-21
K/W A
10
t = 10.0s p 0
10
2
Z thJC
= V
DS
ID
10
-1
/I
D
DS (on )
100 s
D = 0.50 10
-2
10
1
R
0.20 0.10 0.05
1 ms
10
-3
0.02 single pulse 0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
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tp
2003-05-09
SPD30N08S2L-21
5 Typ. output characteristic ID = f (V DS); T j=25C parameter: tp = 80 s
SPD30N08S2L-21
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
70
SPD30N08S2L-21
75
A
Ptot = 136W
V [V] GS a
c d e f i h g f
60
3.0 3.3 3.5 3.8 4.0 4.3 4.5 4.8 10.0
60 55 50
b c d e
55
R DS(on)
50 45 40 35 30 25
g h
ID
45
e
f g h
40 35 30 25 20 15
b c
di
20 15 10 V [V] = GS 5 4
c 3.5 d 3.8 e 4.0 f 4.3 g 4.5 h i 4.8 10.0
i
10 5 0 0 0.5 1 1.5 2 2.5 3 3.5
a
V
0 5 0 10 20 30 40 50
A
65
VDS
ID
7 Typ. transfer characteristics ID= f ( V GS ); V DS 2 x ID x RDS(on)max parameter: tp = 80 s
60
8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs
50
A
50 45
S
40 35
g fs V5 VGS
ID
40 35 30 25 20
30 25 20 15
15 10 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 0 0 5 10 15 20 25 30
A 40 ID
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SPD30N08S2L-21
9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 25 A, VGS = 10 V
80
SPD30N08S2L-21
10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS
2
60
400 A
V V GS(th)
80 A
R DS(on)
50
40
1
30 98% 20 typ 10 0.5
0 -60
-20
20
60
100
140 C
200
0 -60
-20
20
60
100
C Tj
180
Tj
11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz
10
4
12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s
10
3 SPD30N08S2L-21
A
pF
C iss
10
2
10
3
C oss
IF
10
1
C
T j = 25 C typ T j = 175 C typ
C rss
T j = 25 C (98%) T j = 175 C (98%)
10
2
10 5 10 15 20
0
0
V
30
0
0.4
0.8
1.2
1.6
2
2.4 V
3
V DS
VSD
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SPD30N08S2L-21
13 Typ. avalanche energy E AS = f (T j) par.: I D = 30 A , V DD = 25 V, R GS = 25
240
14 Typ. gate charge VGS = f (QGate) parameter: ID = 30 A pulsed
16
SPD30N08S2L-21
mJ
V
200 180 12
E AS
160 140 120 100
VGS
10
0,2 VDS max 0,8 VDS max
8
6 80 60 40 2 20 0 25 45 65 85 105 125 145 4
C 185 Tj
0 0 10 20 30 40 50 60 70 nC 85
QGate
15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA
92
SPD30N08S2L-21
V
88
V(BR)DSS
86 84 82 80 78 76 74 72 70 68 -60 -20 20 60 100 140 C 200
Tj
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SPD30N08S2L-21
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD30N08S2L-21, for simplicity the device is referred to by the term SPD30N08S2L-21 throughout this documentation.
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