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CHIPLED
LG Q971
Besondere Merkmale
q q q q q q
Gehausebauform: 0603 Industriestandard bzgl. Lotpadraster geringe Bauteilhohe fur IR-Lotung geeignet fur Hinterleuchtungen und als opt. Indikator einsetzbar gegurtet (8-mm-Filmgurt)
VEO06989
Features
q q q q q q
0603 package Industry standard footprint low profile suitable for IR reflow soldering process for use as optical indicator and backlighting available taped on reel (8 mm tape)
Typ
Type
Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area green colorless clear
Lichtstarke
Lichtstrom
Bestellnummer
Luminous Intensity IF = 20 mA I V (mcd) 6.30 (15 typ.)
Luminous Flux IF = 20 mA V (mlm) 120 (typ.)
Ordering Code
LG Q971-KO
Q62702-P5098
Semiconductor Group
1
1998-08-28
LG Q971
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current tp 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Sperrschicht / Umgebung Thermal resistance Junction / air Symbol Symbol Werte Values - 30 ... + 85 - 40 ... + 85 + 95 20 0.1 Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot Rth JA
5 55 800
V mW K/W
Semiconductor Group
2
1998-08-28
LG Q971
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite Spectral bandwidth IF = 20 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 5 V (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol Werte Values 565 Einheit Unit nm
peak
dom
570
nm
28
nm
2
160 2.2 2.6 0.01 10 0.06 0.10
Grad deg. V V A A nm/K nm/K
VF VF IR IR
TC TC
Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA Temperaturkoeffizient von (IF = 20 mA) Temperature coefficient of (IF = 20 mA) Temperaturkoeffizient von VF, IF = 20 mA (typ.) Temperature coefficient of VF, IF = 20 mA (typ.) Temperaturkoeffizient von IV, IF = 20 mA (typ.) Temperature coefficient of IV, IF = 20 mA (typ.) (typ.) (typ.)
TC TCV TCIv
0.02 - 1.2 - 0.6
nm/K mV/K %/K
Semiconductor Group
3
1998-08-28
LG Q971
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve
1.0 rel % 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 450 500 550 600 650 700 nm 750
OHL00406
V
Abstrahlcharakteristik Irel = f () Radiation characteristic
40 30 20 10 0
OHL00408
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
Semiconductor Group
4
1998-08-28
LG Q971
Durchlastrom IF = f (VF) Forward current TA = 25 C
10 2
OHL00427
Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C
10 1 V V (20 mA) 10 0 5
OHL00426
F mA
10 1
10 0
10 -1
10 -1
5
10
-2
10 -2 5
10 -3 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
V 3.2
10 -3 -1 10
5 10 0
5 10 1
mA 10 2
VF
F
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
30 mA
OHL00428
F 25
20
15
10
5
0
0 10 20 30 40 50 60 70 80
C 100
TA
Semiconductor Group
5
1998-08-28
LG Q971
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
(0.3)
0.8 0.05
0.8 0.05 0.3 0.05
Soldering terminal LED die Cathode mark
1.6 0.05
(1.08)
1.0 0.15
(1.2)
(0.3)
Soldering terminal
Polarity
(0.4) P.C. board Resin
0.3 0.15
GEO06989
Semiconductor Group
6
1998-08-28

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