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 PD55008 - PD55008S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V * NEW RF PLASTIC PACKAGE
DESCRIPTION The PD55008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55008 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature
0
PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55008 PD55008
PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55008S XPD55008S
Value 40 20 4 52.8 165 -65 to 165
Unit V V A W
OC OC
THERMAL DATA
R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8
OC/W
1/10
PD55008 - PD55008S
ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC
Symbol IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter VDS = 28 V VDS = 0 V ID = 150 mA ID = 1.5 A ID = 1.5 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz 1.6 58 39 2.6 2.0 Min. Typ. Max. 1 1 5.0 1.0 Unit A A V V mho pF pF pF
DYNAMIC
Symbol POUT GPS D LOAD Mismatch f = 500 MHz f = 500 MHz f = 500 MHz Parameter VDD = 12.5 V VDD = 12.5 V VDD = 12.5 V IDQ = 150 mA POUT = 8 W POUT = 8 W POUT = 8 W IDQ = 150 mA IDQ = 150 mA IDQ = 150 mA 20:1 Min. 8 17 55 Typ. Max. Unit W dB % VSWR
f = 500 MHz VDD = 15.5 V ALL PHASE ANGLES
PIN CONNECTION
SOURCE
D
ZDL
GATE
DRAIN G Zin
Typical Input Impedance
Typical Drain Load Impedance
SC15200
SC13140
S
PD55008
Frequency MHz 520 500 480 Zin
IMPEDANCE DATA PD55008S
Zdl
Frequency MHz 520 500 480
Zin
Zdl
1.649 - j1.965 1.589 - j1.185 1.141 - j2.054
1.716 - j1.552 1.561 - j2.639 1.649 - j2.916
1.586 - j2.087 1.409 - j3.448 1.075 - j2.727
3.082 + j2.043 2.129 + j3.219 2.046 +j1.960
2/10
PD55008 - PD55008S TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
1000
f=1MHz
Drain Current vs. Gate Voltage
8 7
Id, DRAIN CURRENT (A)
C, CAPACITANCES (pF)
6 5 4 3 2
VDS=10V
100
Ciss
Coss
10
Crss
1 0
1 0 5 10 15 20 25
VDD, DRAIN VOLTAGE (V)
1
2
3
4
5
6
7
8
9
VGS, GATE-SOURCE VOLTAGE (V )
Gate-Source vs. Case Temperature
VGS, GATE-SOURCE VOLTAGE(NORMALIZED)
1.06 1.04 1.02 1
ID=2A
0.98 0.96
VDS=10V
ID = 1.5A ID =1A
0.94 0.92 -25
ID =.5A ID=.25A
0
25
50
75
100
Tc, CASE TEMPERATURE (C)
3/10
PD55008 - PD55008S TYPICAL PERFORMANCE
Output Power vs. Input Power
14 12
Pout, OUTPUT POWER (W)
480MHz 500MHz
PD55008
Power Gain vs. Output Power
22 20
Pg, POWER GAIN (dB)
480MHz
520MHz
10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Pin, INPUT POWER (W)
VDD =12.5V IDQ=150mA
18 16
520MHz
14 12 10 8 6 0 2 4 6 8
VDD =12.5V IDQ=150mA
500MHz
10
12
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
80
520MHz
Input Return Loss vs. Output Power
0
Rtl, INPUT RETURN LOSS (dB)
70
Nd, DRAIN EFFICIENCY (%)
60 50 40 30 20 10 0 0 2 4
500MHz 480MHz
-10
500MHz
-20
480MHz
-30
VDD=12.5V IDQ=150mA 520MHz
VDD=12.5V IDQ=150 mA
-40 6 8 10 12 0 2 4 6 8 10 12
Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
12 10 8
500MHz 480MHz
Drain Efficiency vs. Bias Current
70
500MHz
Pout, OUTPUT POWER (W)
Nd, DRAIN EFFICIENCY (%)
60 50
480MHz 520MHz
6 4 2 0 0
520MHz
40 30 20 10
VDD=12.5V Pin=21.7 dBm
VDD=12.5V Pin=21.7dBm
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
0
100 200 300 400 500 600 700
IDQ, BIAS CURRENT (mA)
800
4/10
PD55008 - PD55008S TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
13 12
Pout, OUTPUT POWER (W)
480 MHz 500 MHz
Drain Efficency vs. Supply Voltage
70
500MHz
11 10 9 8 7 6 5 4 3 9 10 11
Nd, DRAIN EFFICIENCY (%)
60
480MHz 520MHz
50
520MHz
40
Idq=150mA Pin=21.7 dB m
30
Idq=150mA Pin=21.7 dBm
20 12 13 14 15 9 10 11 12 13 14 15
VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V)
Output Power vs. Gate-Source Voltage
12
480MHz
Output Power vs. Input Power
14
500M Hz
PD55008S
Pout, OUTPUT POWER (W)
10
Pout, OUTPUT POWER (W)
12 10 8 6 4 2 0 0 0.1
480MHz 520MHz
8
500MHz
6 4 2 0 0 1 2 3
520MHz
VDD=12.5 V Pin=21.7 dBm
VDD=12.5V IDQ=150mA
4
0.2
0.3
0.4
0.5
VGS, GATE-SOURCE VOLTAGE (V)
Pin, INPUT POWER (W)
Power Gain vs. Output Power
22 20
Pg, POWER GAIN (dB)
520MHz 480M Hz
Drain Efficiency vs. Output Power
80 70
Nd, DRAIN EFFICIENCY (%)
520 MHz
18
500M Hz
60
500MHz
16 14 12 10 8 6 0 2 4 6 8 10 12 14
Pout, OUTPUT POWER (W)
VDD=12.5V IDQ=150mA
50 40 30 20 10 0 0 2 4 6 8 10 12
Pout, OUTPUT POWER (W)
VDD= 12.5V IDQ= 150 mA 480MHz
5/10
PD55008 - PD55008S TYPICAL PERFORMANCE
Input Return Loss vs. Output Power
0
Output Power vs. Bias Current
12
Rtl, INPUT RETURN LOSS (dB)
520MHz
10
Pout, OUTPUT POWER (W)
500M Hz 480M Hz
-10
480MHz
8
500MHz
-20
6 4 2 0 0 100
520MHz
-30
VDD=12.5V IDQ=150mA
VDD=12.5V Pin=21 dBm
-40 0 2 4 6 8 10 12
Pout, OUTPUT POWER (W)
200
300
400
500
600
700
800
IDQ, BIAS CURRENT (mA)
Drain Efficiency vs. Bias Current
70 60
Nd, DRAIN EFFICIENCY (%)
Output Power vs. Supply Voltage
11 10
Pout, OUTPUT POWER (W)
520MHz
9 8 7 6 5 4 3
520MHz
480MHz 520MHz 500MHz
50
500MHz
40 30 20 10 0 100 200 300 400 500
480MHz
VDD=12.5V Pin=21dBm
Idq=150mA Pin=21dBm
600
700
800
9
10
11
12
13
14
15
IDQ, BIAS CURRENT (mA)
VDD, SUPPLY VOLTAGE (V)
Drain Efficency vs. Supply Voltage
60
520MHz
Output Power vs. Gate-Source Voltage
12 10
Pout, OUTPUT POWER (W)
Nd, DRAIN EFFICIENCY (%)
50
500MHz
8 6 4
520MHz 480M Hz 500MHz
40
480 MHz
30
Idq=150 mA Pin= 21dBm
2 0
VDD=12.5V Pin=21dBm
20 9 10 11 12 13 14 15
VDD, SUPPLY VOLTAGE (V)
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
6/10
PD55008 - PD55008S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2 C1,C12 C2,C3,C10,C11 C4 C5,C16 C6,C13 C7,C14 C8,C15 C9 L1 N1,N2 R1 R2 R3 SHORT FERRITT BEAD, FAIR RITE PRODUCTS (2743021446) 240pF, 100 mil CHIP CAPACITOR 0 to 20 pF TRIMMER CAPACITOR 82pF, 100 mil CHIP CAP 120pF, 100 mil CHIP CAP 10F, 50V ELECTROLYTIC CAPACITOR 1.200pF mil CHIP CAP 0.1 F, 100 mil CHIP CAP 30pF, 100 mil CHIP CAP 55.5 nH, TURN, COILCRAFT TYPE N FLANGE MOUNT 15 , 0805 CHIP RESISTOR 51 , 1/2 W RESISTOR 10 , 0805 CHIP RESISTOR R4 Z1 Z2 Z3 Z4 Z5,Z6 Z7 Z8 Z9 Z10 BOARD 33K, 1/8 W RESISTOR 0.451" X 0.080" MICROSTRIP 1.005" X 0.080" MICROSTRIP 0.020" X 0.080" MICROSTRIP 0.155" X 0.080" MICROSTRIP 0.260" X 0.223" MICROSTRIP 0.065" X 0.080" MICROSTRIP 0.266" X 0.080" MICROSTRIP 1.113" X 0.080" MICROSTRIP 0.433" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 THK 0.030" r = 2.55 2oz ED Cu 2 SIDES
7/10
PD55008 - PD55008S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
8/10
4 inches
PD55008 - PD55008S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
9/10
PD55008 - PD55008S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
10/10


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