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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jun 24 2004 May 12 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency, reduces heat generation * Reduces printed-circuit board area required * Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS * Major application segments: - Automotive 42 V power - Telecom infrastructure - Industrial. * Power management: - DC-to-DC conversion - Supply line switching. * Peripheral driver - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load driver (e.g. relays, buzzers and motors). Top view handbook, halfpage PBSS4160T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 60 1 2 250 UNIT V A A m 3 3 1 2 1 2 MAM255 DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. MARKING TYPE NUMBER PBSS4160T Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION TYPE NUMBER PBSS4160T PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 MARKING CODE(1) *U5 Fig.1 Simplified outline (SOT23) and symbol. 2004 May 12 2 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation tp 300 s; 0.02 Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; notes 1 and 3 Tstg Tj Tamb Notes storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector note 1 note 2 t = 1 ms or limited by Tj(max) - - - - - - - - - - - -65 - -65 MIN. PBSS4160T MAX. 80 60 5 0.9 1 2 300 1 270 400 1.25 +150 150 +150 V V V A A A UNIT mA A mW mW W C C C 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle 20%, pulse width tp 10 ms. handbook, halfpage 500 MLE128 Ptot (mW) 400 (1) 300 (2) 200 100 0 0 40 80 120 160 Tamb (C) (1) Device mounted with 1 cm2 collector tab. (2) Device mounted on standard footprint. Fig.2 Power derating curves. 2004 May 12 3 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 in free air; notes 1 and 3 Notes VALUE 465 312 100 PBSS4160T UNIT K/W K/W K/W 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle 20%, pulse width tp 10 ms. 103 handbook, full pagewidth =1 Zth (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 0.02 0.01 MLE127 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) Mounted on printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 12 4 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 C VCE = 60 V; VBE = 0 A VEB = 5 V; IC = 0 A VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA; note 1 VCE = 5 V; IC = 1 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 VBEsat RCEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz MIN. - - - - 250 200 100 - - - - - - 150 PBSS4160T TYP. - - - - 400 350 150 90 110 200 0.95 200 0.82 220 5.5 MAX. 100 50 100 100 - - - 110 140 250 1.1 250 0.9 - 10 UNIT nA A nA nA mV mV mV V m V MHz pF VCB = 10 V; IE = Ie = 0 A; f = 1 MHz - handbook, halfpage 800 MLE130 handbook, halfpage 1.2 MLE133 hFE 600 (1) VBE (V) (1) 0.8 (2) (2) (3) 400 (3) 0.4 200 0 10-1 1 10 102 103 104 IC (mA) 0 10-1 1 10 102 103 104 IC (mA) VCE = 5 V. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Base-emitter voltage as a function of collector current; typical values. 2004 May 12 5 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T handbook, halfpage 1 MLE135 handbook, halfpage 1 MLE104 VCEsat (V) 10-1 VCEsat (V) 10-1 (2) (1) 10-2 (3) (1) (3) (2) 10-3 10-1 1 10 102 103 104 IC (mA) 10-2 10-1 1 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 1 MLE129 handbook, halfpage 1.2 MLE134 VCEsat (V) VBEsat (V) 0.8 (3) (1) (1) (2) 10-1 (2) 0.4 10-2 10-1 1 10 102 103 104 IC (mA) 0 10-1 1 10 102 103 104 IC (mA) Tamb = 25 C. (1) IC/IB = 100. (2) IC/IB = 50. IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2004 May 12 6 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T handbook, halfpage 2 MLE131 (6) (5) (4) (3) (2) IC (A) (1) 103 handbook, halfpage RCEsat () 102 MLE132 1.6 (7) 1.2 (8) (9) 10 0.8 (10) 1 0.4 (2) (1) (3) 0 0 Tamb = 25 C. (1) IB = 60 mA. (2) IB = 54 mA. (3) IB = 48 mA. (4) IB = 42 mA. (5) IB = 36 mA. (6) IB = 30 mA. (7) IB = 24 mA. (8) IB = 18 mA. (9) IB = 12 mA. (10) IB = 6 mA. 1 2 3 4 VCE (V) 5 10-1 10-1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.10 Collector current as a function of collector-emitter voltage; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. 2004 May 12 7 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PBSS4160T SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 May 12 8 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS4160T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 May 12 9 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 May 12 Document order number: 9397 750 13198 |
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