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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF255/D The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large-signal, common source amplifier applications in 12.5 Volt mobile and base station equipment. * Guaranteed Performance at 54 MHz, 12.5 Volts Output Power -- 55 Watts PEP Power Gain -- 13 dB Min Two-Tone IMD -- -25 dBc Max Efficiency -- 40% Min, Two-Tone Test * Characterized with Series Equivalent Large-Signal Impedance Parameters * Excellent Thermal Stability * All Gold Metal for Ultra Reliability * Aluminum Nitride Package Electrical Insulator * Circuit Board Photomaster Available by Ordering Document MRF255PHT/D from Motorola Literature Distribution. MRF255 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET CASE 211-11, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 36 36 20 22 175 1.0 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.0 Unit C/W Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MOTOROLA RF (c) Motorola, Inc. 1995 DEVICE DATA MRF255 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 20 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 4.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture.) Common Source Amplifier Power Gain, f1 = 54, f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) Intermodulation Distortion (1), f1 = 54.000 MHz, f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) Drain Efficiency, f1 = 54; f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) Drain Efficiency, f = 54 MHz (VDD = 12.5 Vdc, Pout = 55 W CW, IDQ = 400 mA) Output Mismatch Stress, f1 = 54; f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA, VSWR = 20:1, at all phase angles) Gps IMD(d3,d5) 13 -- 40 -- 16 - 30 45 60 -- - 25 -- -- dB dBc % % Ciss Coss Crss -- -- -- 140 285 38 -- -- 44 pF pF pF VGS(th) VDS(on) gfs 1.25 -- 4.2 2.3 -- -- 3.5 0.4 -- Vdc Vdc S V(BR)DSS IDSS IGSS 36 -- -- -- -- -- -- 5.0 5.0 Vdc mAdc Adc Symbol Min Typ Max Unit No Degradation in Output Power Before and After Test (1) To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. MRF255 2 MOTOROLA RF DEVICE DATA RFC1 VGG + + C5 C6 L5 C4 L1 C2 C3 L2 C9 R1 C10 R2 DUT C7 C8 L3 L4 C11 C12 C14 N2 RF OUTPUT C15 C16 + C17 VDD RF INPUT N1 C1 C1 -- 470 pF, Chip Capacitor C2, C3, C11, C12 -- 20 - 200 pF, Trimmer, ARCO #464 C4 -- 100 pF, Chip Capacitor C5, C17 -- 100 F, 15 V, Electrolytic C6 -- 0.001 F, Disc Ceramic C7, C8, C9, C10 -- 330 pF, Chip Capacitor C14 -- 1200 pF, ATC Chip Capacitor C15 -- 910 pF, 500 V, Dipped Mica C16 -- 47 F, 16 V, Electrolytic L1 -- 8 Turns, #20 AWG, 0.126 ID L2 -- 5 Turns, #18 AWG, 0.142 ID L3 -- 3 Turns, #20 AWG, 0.102 ID L4 -- 7 Turns, #24 AWG, 0.070 ID L5 -- 6.5 Turns, #18 AWG, 0.230 ID, 0.5 Long N1, N2 -- Type N Flange Mount RFC1 -- Ferroxcube VK-200-19/4B R1 -- 39 k, 1/4 W Carbon R2 -- 150 , 1/4 W Carbon Board -- G-10 .060 Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dB) - 10 Pout , OUTPUT POWER (WATTS PEP) 100 90 80 70 60 50 40 30 20 10 0 VDD = 12.5 Vdc IDQ = 400 mA f1 = 54 MHz, f2 = 54.001 MHz 1 2 3 Pin, INPUT POWER (WATTS PEP) 4 - 20 IMD3 - 30 IMD5 - 40 VDD = 12.5 Vdc IDQ = 400 mA f1 = 54 MHz, f2 = 54.001 MHz 0 10 20 30 40 50 60 70 OUTPUT POWER (WATTS PEP) 80 90 - 50 - 60 Figure 2. IMD versus Output Power 100 Pout , OUTPUT POWER (WATTS CW) Pout , OUTPUT POWER (WATTS CW) 90 80 70 60 50 40 30 20 10 0 VDD = 12.5 Vdc IDQ = 400 mA f = 54 MHz 1 2 3 Pin, INPUT POWER (WATTS CW) 4 100 90 80 70 60 50 40 30 20 10 0 9 Figure 3. Output Power versus Input Power Pin = 4 W 2W 1W 0.5 W IDQ = 400 mA f = 54 MHz 10 11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS) 15 16 Figure 4. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF255 3 TYPICAL CHARACTERISTICS 15 IDS , DRAIN CURRENT (AMPS) 1000 Coss 10 C, CAPACITANCE (pF) 100 Ciss 5 VDS = 10 Vdc VGS(th) = 2.3 Vdc 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 6 Crss VGS = 0 Vdc f = 1 MHz 10 0 5 20 25 10 15 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 30 Figure 6. Drain Current versus Gate Voltage VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 - 25 VDD = 12.5 Vdc 0 1A 0.5 A 150 175 1 1 3A 5A ID = 7 A I D, DRAIN CURRENT (AMPS) Figure 7. Capacitance versus Voltage TC = 25C 10 25 50 75 100 125 TC, CASE TEMPERATURE (C) 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 Figure 8. Gate-Source Voltage versus Case Temperature Figure 9. DC Safe Operating Area Table 1. Series Equivalent Input and Output Impedance VDD = 12.5 Vdc, IDQ = 400 mA, Pout = 55 W PEP Optimized for Efficiency and IM Performance f MHz 54 Zin Ohms 6.50 + j7.96 ZOL* Ohms 1.27 + j1.54 ZOL* = Conjugate of the optimum load impedance into which the device operates at a given power, voltage and frequency. MRF255 4 MOTOROLA RF DEVICE DATA Table 2. Common Source Scattering Parameters (VDS = 12.5 Vdc) ID = 100 mA f (MHz) 1 2 5 10 20 30 40 50 60 70 80 90 100 120 140 160 180 200 220 240 260 S11 |S11| 0.98 0.92 0.81 0.76 0.74 0.75 0.75 0.76 0.78 0.79 0.80 0.81 0.82 0.85 0.87 0.88 0.90 0.91 0.92 0.93 0.94 e - 32 - 60 - 110 - 140 - 158 - 163 - 166 - 167 - 168 - 168 - 169 - 169 - 169 - 170 - 171 - 172 - 173 - 174 - 175 - 176 - 177 S21 |S21| 39.6 34.6 21.3 11.9 6.08 4.03 2.98 2.35 1.91 1.60 1.36 1.18 1.03 0.81 0.65 0.54 0.45 0.38 0.33 0.29 0.25 e 161 145 118 102 90 82 77 72 67 63 59 56 52 46 41 37 33 30 27 25 23 S12 |S12| 0.013 0.023 0.035 0.039 0.040 0.039 0.038 0.037 0.036 0.034 0.032 0.031 0.029 0.025 0.022 0.019 0.017 0.016 0.016 0.016 0.018 e 71 56 29 14 4 -2 -5 -8 - 10 - 12 - 13 - 14 - 15 - 14 - 11 -6 2 12 23 34 44 S22 |S22| 0.32 0.50 0.75 0.83 0.86 0.87 0.87 0.88 0.89 0.89 0.90 0.90 0.91 0.92 0.93 0.94 0.95 0.95 0.96 0.96 0.97 e - 80 - 108 - 143 - 160 - 169 - 173 - 174 - 175 - 176 - 176 - 177 - 177 - 177 - 178 - 179 180 179 178 177 176 175 ID = 400 mA f (MHz) 1 2 5 10 20 30 40 50 60 70 80 90 100 120 140 160 180 200 220 240 260 S11 |S11| 0.98 0.95 0.90 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.89 0.89 0.89 0.89 0.90 0.90 0.91 0.91 0.91 0.92 e - 46 - 80 - 129 - 153 - 167 - 171 - 173 - 175 - 176 - 176 - 177 - 177 - 178 - 178 - 179 - 179 - 180 180 179 179 178 S21 |S21| 56.6 46.1 25.1 13.4 6.82 4.55 3.41 2.72 2.25 1.92 1.67 1.47 1.31 1.08 0.90 0.77 0.67 0.59 0.53 0.47 0.43 e 155 137 113 100 91 87 83 80 78 75 72 70 68 63 59 55 52 48 45 42 40 S12 |S12| 0.008 0.013 0.017 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.021 0.022 0.023 0.025 0.026 e 66 48 25 14 10 9 10 11 12 14 16 18 20 24 29 34 38 43 47 50 53 S22 |S22| 0.45 0.64 0.84 0.89 0.91 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.94 0.94 0.95 0.95 e - 148 - 151 - 164 - 172 - 176 - 178 - 178 - 179 - 179 - 180 180 179 179 179 178 177 177 176 175 175 174 MOTOROLA RF DEVICE DATA MRF255 5 Table 2. Common Source Scattering Parameters (continued) (VDS = 12.5 Vdc) ID = 1 A f (MHz) 1 2 5 10 20 30 40 50 60 70 80 90 100 120 140 160 180 200 220 240 260 S11 |S11| 0.98 0.96 0.93 0.93 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 e - 54 - 91 - 137 - 158 - 169 - 173 - 175 - 176 - 177 - 178 - 179 - 179 - 180 180 179 178 178 177 177 176 176 S21 |S21| 65.5 50.9 26.2 13.7 6.96 4.65 3.49 2.79 2.32 1.99 1.74 1.54 1.39 1.15 0.98 0.86 0.76 0.68 0.61 0.56 0.51 e 152 133 110 99 92 89 86 84 82 80 78 76 74 71 68 65 62 59 56 53 51 S12 |S12| 0.006 0.009 0.011 0.012 0.012 0.012 0.013 0.013 0.013 0.014 0.014 0.015 0.016 0.017 0.019 0.020 0.022 0.024 0.026 0.028 0.030 e 63 44 23 15 15 18 21 25 28 31 34 37 40 44 48 51 54 56 58 59 61 S22 |S22| 0.60 0.75 0.88 0.91 0.92 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.94 e - 162 - 163 - 170 - 175 - 178 - 179 - 180 180 179 179 179 178 178 177 177 176 176 175 175 174 173 DESIGN CONSIDERATIONS The MRF255 is a common-surce, RF power, N-channel enhancement mode Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. This device was designed primarily for HF 12.5 V mobile linear power amplifier applications. The major advantages of RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. MRF255 6 MOTOROLA RF DEVICE DATA GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since the MRF255 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 8 for a typial plot of drain current versus gate voltage. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. The MRF255 was characterized for linear and CW operation at I DQ = 400 mA, which is the suggested value of bias current for typical applications. The gate is a dc open circuit and draws essentially no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some applications may require a more elaborate bias sytem. GAIN CONTROL For CW applications, power output of the MRF255 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, AGC/ALC and modulation systems. The characteristic is very dependent on frequency and load line. MOTOROLA RF DEVICE DATA MRF255 7 PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 SOURCE GATE SOURCE DRAIN MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 STYLE 2: PIN 1. 2. 3. 4. CASE 211-11 ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF255 8 *MRF255/D* MOTOROLA RF DEVICEMRF255/D DATA |
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