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TO-237 Plastic Package
Boca Semiconductor Corp. BSC http://www.bocasemi.com
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N6714 2N6715 2N6716
Designed for General purpose Medium Power Amplifier and Switching Circuits.
E
B
C
1 = EMITTER 2 = BASE 3 = COLLECTOR
123
ABSOLUTE MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation @ Ta=25C Operating And Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD Tj ,Tstg 2N6714 30 40 2N6715 40 50 5.0 1.5 850 -55 to +150 2N6716 60 60 Units V V V A mW C
2N6714 2N6715 2N6716
ELECTRICAL CHARACTERISTICS (Ta =25C unless otherwise specified) Description Collector Cutoff Current VCB=40V, IE=0 VCB=50V, IE=0 VCB=40V, IE=0 D.C. Current Gain IC=10mA, VCE=1V IC=100mA, VCE=1V IC=1A, VCE=1V 2N6714 2N6715 2N6716 2N6714/6715 2N6714/6715 2N6714/6715 Symbol ICBO Min. 55 60 50 80 50 20 VCE(sat) Max. 100 100 100 250 250 0.5 0.35 1.2 V V V Unit nA nA nA
hFE
IC=50mA, VCE=1V 2N6716 IC=250mA, VCE=1V 2N6716 IC=500mA, VCE=1V 2N6716 Collector-Emitter Saturation Voltage IC=1A, IB =100mA 2N6714/6715 I C=250mA, IB=25mA 2N6716 Base Emitter on Voltage IC=1A, VCE=1V 2N6714/6715 DYNAMIC CHARACTERISTICS Output Capacitance VCB=10V, IE=0, ALL f=1MHz Current-Gain-Bandwidth Product IC=50mA, VCE=1V 2N6714/6716 2N6715
V BE(on)
C ob
-
20
pF
fT
50 50
500 400
MHz MHz
Boca Semiconductor Corp. BSC http://www.bocasemi.com
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