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| PA1750 ELECTRICAL CHARACTERISTICS (TA = 25 C, all terminals are connected.) Characteristics Drain to Source On-state Resistance Symbol RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = -3.5 A VDD = -16 V VGS = -10 V IF = 3.5 A, VGS = 0 IF = 3.5 A, VGS = 0 di/dt = 100 A/s Test Conditions VGS = -10 V, ID = -1.8 A VGS = -4 V, ID = -1.8 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.8 A VDS = -20 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = -10 V VGS = 0 f = 1 MHz ID = -1.8 A VGS(on) = -10 V VDD = -10 V RG = 10 540 385 105 10 110 340 230 18 2.0 5.1 0.8 160 310 -1.0 2.0 Min. Typ. 0.065 0.125 -1.7 4.4 -10 Max. 0.090 0.180 -2.5 Unit V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS D.U.T. IG = 2 mA VGS(on) 90 % VGS Wave Form 0 10 % PG. 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 2 10 RL VDD PA1750 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 2 unit 1 unit Mounted on ceramic substrate of 2 000 mm 2 x 1.1 mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed FORWARD BIAS SAFE OPERATING AREA -100 Mounted on ceramic substrate of 2 000 mm2 x 1.1 mm 1 unit m L1 - n) (o = DS GS -20 IC - Drain Current - A s ID - Drain Current - A -10 d ite ) im 0 V ID(DC) ID(pulse) 1 10 -16 -12 -8 -4 RV t (a VGS = -10 V -4 V m s 10 Po 0 m s -1 we rD iss DC ipa tio n Lim -0.1 -0.1 TA = 25 C Single Pulse -1 ite d -10 -100 0 -5 -10 -15 -20 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS -10 Pulsed ID - Drain Current - A -1 TA = -25 C 25 C 75 C 125 C -0.1 -0.01 VDS = -10 V 0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V 3 PA1750 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 0.01 0.001 10 Mounted on ceramic substrate of 2000 mm2 x 1.1 mm Single Pulse , 1 unit 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS= -10 V Pulsed TA = -25 C 25 C 75 C 125 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.3 Pulsed 10 0.2 1 0.1 ID = -1.8 A 0.1 -0.1 -1 -10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT -100 0 -5 -10 -15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-State Resistance - 0.3 Pulsed VGS(off) - Gate to Source Cutoff Voltage - V -2.0 VDS = -10 V ID = -1 mA 0.2 VGS = -4.0 V 0.1 -1.5 -1.0 VGS = -10 V -0.5 0 0 -50 0 50 100 150 Tch - Channel Temperature - C -1 -10 ID - Drain Current - A -100 4 PA1750 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Forward Current - A 0.20 VGS = -4 V -100 RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.15 -10 VGS = -10 V 0.10 -10 V -4 V -1 VGS = 0 0.05 ID = -1.8 A -50 0 50 100 150 -0.1 0 -0.5 -1.0 -1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 f = 1 MHz 1000 SWITCHING CHARACTERISTICS td(off) tr tf 100 td(on) 10 VDD = -10 V VGS(on) = -10 V RG = 10 -10 -100 1 000 Ciss Coss 100 Crss 10 -0.1 -1 -10 -100 1 -0.1 -1 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. BODY DIODE CURRENT 1 000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/ s VGS = 0 100 -30 VDD = -16 V -10 V -4 V -20 -12 VGS -8 10 -10 VDS 0 10 20 30 40 -4 1 -0.1 -1 -10 -100 0 IF - Diode Current - A QG - Gate Charge - nC 5 VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -16 -40 ID = -1.8 A PA1750 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037 6 PA1750 [MEMO] 7 PA1750 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8 |
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