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DG2799
New Product
Vishay Siliconix
0.25-W CMOS, 1.65-V to 4.3-V, Dual DPDT Analog Switch
FEATURES
D Low Voltage Operation (1.65 V to 4.3 V) D Low On-Resistance - rON: 0.25 W @ 2.7 V D Fast Switching: tON = 28 ns tOFF = 17 ns D QFN-16 (3x3) Package D Latch-Up Current >300 mA (JESD78)
BENEFITS
D D D D D Reduced Power Consumption High Accuracy Reduce Board Space TTL/1.8-V Logic Compatible High Bandwidth
APPLICATIONS
D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems
DESCRIPTION
The DG2799 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2799 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2799 is built on Vishay Siliconix's low voltage process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured in QFN packages, the lead (Pb)-free "-E3/E4" suffix is being used as a designator. Lead (Pb)-free QFN products purchased at any time will have either a nickel-palladium-gold device termination or a 100% matte tin device termination. The different lead (Pb)-free materials are interchangeable and meet all JEDEC standards for reflow and MSL rating.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
QFN-16 (3 X 3) COM1 NO1 16 15 V+ 14 NC4 13
DG2799
TRUTH TABLE Logic
12 11 10 9 COM4 NO4 0 1
NC1, 2, 3 and 4
ON OFF
NO1, 2, 3 and 4
OFF ON
NC1 IN1, IN2 NO2 COM2
1 2 3 4
ORDERING INFORMATION
IN3, IN4 NC3
Temp Range
-40 to 85C
Package
16-Pin QFN (3 x 3 mm) Variation 2
Part Number
DG2799DN-T1--E3/E4
5 NC2 NOTE:
6 GND
7
8
NO3 COM3
Top View Underside exposed pad has no device electrical connection. It is recommended that no electrical connection is made to it.
Document Number: 72922 S-41957--Rev. B, 25-Oct-04
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DG2799
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +5.0 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "300 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Package Solder Reflow Conditionsd 16-Pin QFN (3 x 3 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250C Power Dissipation (Packages)b QFN-16c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1385 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 17.3 mW/_C above 70_C d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
New Product
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance VNO, VNC, VCOM rON V+ = 1.8 V, VCOM = 0.2 V/0.9 V, INO, INC = 100 mA Full Room Full 0 0.47 V+ 1.3 1.4 V W
Limits
-40 to 85_C
Symbol
V+ = 1.8 V, VIN = 0.4 or 1.1 Ve
Tempa
Minb
Typc
Maxb
Unit
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.1 0.4 6 -1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Channel On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 100 kHz W, pF, VNO or VNC = 1.5 V, RL = 50 W, CL = 35 pF Room Full Room Full Full Room Room Room Room Room Room Room 8 66 -74 -74 108 108 240 240 pF pC dB 62 24 94 97 52 55 ns
Power Supply
Power Supply Current I+ VIN = 0 or V+ Full 1.0 mA
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Document Number: 72922 S-41957--Rev. B, 25-Oct-04
DG2799
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA V+ = 2.7 V VCOM = 0 to V+ INO, INC = 100 mA V+, Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 0.3 0.07 0.05 1 10 1 10 1 10 nA V+ 0.45 0.55 0.15 W V
Vishay Siliconix
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.5 or 1.4 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Current
V+ = 3.3 V, VNO, VNC = 0.3 V/3.0 V VCOM = 3.0 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3.0 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.4 0.5 6 -1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Channel On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 100 kHz W, pF, VNO or VNC = 1.5 V, RL = 50 W, CL = 35 pF Room Full Room Full Full Room Room Room Room Room Room Room 1 160 -75 -75 102 102 234 234 pF pC dB 28 17 57 60 45 47 ns
Power Supply
Power Supply Range Power Supply Current V+ I+ VIN = 0 or V+ Full 2.7 3.3 1.0 V mA
Document Number: 72922 S-41957--Rev. B, 25-Oct-04
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DG2799
Vishay Siliconix
SPECIFICATIONS (V+ = 4.3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Currentd ICOM(on) V+ = 4.3 V, VCOM = 0.5 V/2.1 V, INO, INC = 100 mA V+ = 4.3 V VCOM = 0 to V+ INO, INC = 100 mA V+, Full Room Full Room Room Room Full Room Full Room Full -10 -100 -10 -100 -10 -100 0 0.29 0.07 0.05 10 100 10 100 10 100 nA V+ 0.43 0.53 0.15 W V
New Product
Limits
-40 to 85_C
Symbol
V+ = 4.3 V, VIN = 0.5 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Currentd
V+ = 4.3 V, VNO, VNC = 0.3 V/4.0 V VCOM = 4.0 V/0.3 V
V+ = 4.3 V, VNO, VNC = VCOM = 0.3 V/4.0 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current VINH VINL
Cin
Full Full Full VIN = 0 or V+ Full
1.6 0.5 6 -1 1
V pF mA
IINL or IINH
Dynamic Characteristics
Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Channel On Capacitanced QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 100 kHz W, pF, Room Room Room Room Room Room Room 320 -73 -73 100 100 230 230 pF pC dB
Power Supply
Power Supply Range Power Supply Current V+ I+ VIN = 0 or V+ Full 4.3 1.0 V mA
Notes:
a. b. c. d. e.
Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, not subjected to production test. VIN = input voltage to perform proper function.
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Document Number: 72922 S-41957--Rev. B, 25-Oct-04
DG2799
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
0.8 0.7 r ON - On-Resistance ( W ) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 V+ = 3.3 V V+ = 3.6 V V+ = 1.65 V T = 25_C IS = 100 mA NC Switch 0.8 0.7 r ON - On-Resistance ( W ) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 IS = 100 mA V+ = 3 V 85_C 25_C -40_C
Vishay Siliconix
rON vs. Analog Voltage and Temperature
V+ = 1.8 V V+ = 2.0 V
V+ = 2.3 V V+ = 2.7 V V+ = 3.0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
0.6 0.5 r ON - On-Resistance ( W ) 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 VCOM - Analog Voltage (V) 1 -60 -40 IS = 100 mA V+ = 4.3 V I+ - Supply Current (nA) 85_C 25_C -40_C 1000 10000
Supply Current vs. Temperature
V+ = 3 V VIN = 0 V
100
10
-20
0
20
40
60
80
100
Temperature (_C)
Supply Current vs. Input Switching Frequency
100 mA 10 mA I+ - Supply Current (A) 1 mA Leakage Current (pA) 100 mA 10 mA 1 mA 100 nA 10 nA 1 nA 100 pA 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) V+ = 2.7 V
Leakage Current vs. Temperature
1000 V+ = 3.3 V INO(off), INC(off) 100
ICOM(off) 10 ICOM(on)
1 -60
-40
-20
0
20
40
60
80
100
Temperature (_C)
Document Number: 72922 S-41957--Rev. B, 25-Oct-04
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DG2799
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
300 250 200 Leakage Current (pA) 150 100 50 0 -50 -100 -150 -200 -250 -300 0.00 0.50 1.00 1.50 2.00 2.50 3.00 0 -60 -40 -20 0 ICOM(on) INO(off), IINC(off)
Leakage vs. Analog Voltage
70 t ON / t OFF - Switching Time (m s) 60 50
Switching Time vs. Temperature
tON V+ = 1.8 V
V+ = 3.3 V ICOM(off)
tON V+ = 2.3 V 40 30 20 10 tOFF V+ = 1.8 V tOFF V+ = 2.3 V 20 40 tOFF V+ = 3.0 V 60 80 100 tON V+ = 3.0 V
VCOM, VNO, VNC - Analog Voltage (V)
Temperature (_C)
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
10 - Switching Threshold (V) LOSS XTALK -30 OIRR -50
2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1.0
Switching Threshold vs. Supply Voltage
-10 Loss, OIRR, X TALK (dB)
-70
V+ = 3 V RL = 50 W
-90 100 K 1M 10 M Frequency (Hz) 100 M 1G
VT
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V+ - Supply Voltage (V)
Charge Injection vs. Analog Voltage
150 100 50 Q - Charge Injection (pC) 0 -50 -100 -150 -200 -250 -300 -350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V+ = 4.3 V V+ = 1.8 V V+ = 3 V
VCOM - Analog Voltage (V)
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Document Number: 72922 S-41957--Rev. B, 25-Oct-04
DG2799
New Product
TEST CIRCUITS
Vishay Siliconix
V+ Logic Input V+ Switch Input Logic Input NO or NC IN GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM R L ) R ON RL RL 50 W CL 35 pF COM Switch Output VOUT Switch Output
VINH 50% VINL
tr t 5 ns tf t 5 ns
0.9 x VOUT 0V tON tOFF
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
Figure 1.
Switching Time
V+ Logic Input COM VO RL 50 W GND CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN
VNC = VNO VO Switch 0V Output
90%
tD
tD
CL (includes fixture and stray capacitance)
Figure 2.
Break-Before-Make Interval
V+
Rgen + Vgen VIN = 0 - V+
V+ NC or NO IN GND COM VOUT CL = 1 nF
VOUT IN
DVOUT
On
Off Q = DVOUT x CL
On
IN depends on switch configuration: input polarity determined by sense of switch. Document Number: 72922 S-41957--Rev. B, 25-Oct-04
Figure 3.
Charge Injection
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DG2799
Vishay Siliconix
TEST CIRCUITS
V+ 10 nF V+ NC or NO IN COM COM 0V, 2.4 V IN NC or NO GND 10 nF V+ COM Meter 0 V, 2.4 V GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
New Product
V+
RL Analyzer
VCOM Off Isolation + 20 log V NO NC
Figure 4.
Off-Isolation
Figure 5.
Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73162. www.vishay.com Document Number: 72922 S-41957--Rev. B, 25-Oct-04
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