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| 2N3903, 2N3904 NPN Version 2004-01-20 Switching Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E 625 mW TO-92 (10D3) 0.18 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCE0 VEB0 Ptot IC Tj TS Grenzwerte (TA = 25/C) 2N3903, 2N3904 40 V 60 V 6V 625 mW 1) 600 mA 150/C - 55...+ 150/C Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspannung IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector cutoff current - Kollektorreststrom VCE = 30 V, VEB = 3 V Emitter cutoff current - Emitterreststrom VCE = 30 V, VEB = 3 V IEBV - ICEV - VCEsat VCEsat VBEsat VBEsat - - - - Kennwerte (Tj = 25/C) Typ. - - - - - - Max. 200 mV 300 mV 850 mV 950 mV 50 nA 50 nA Base saturation voltage - Basis-Sattigungsspannung 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 30 General Purpose Transistors 2N3903, 2N3904 Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 510 mA 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE fT fT CCB0 CEB0 F F ton toff 20 40 35 70 50 100 30 60 15 30 250 MHz 300 MHz - - - - - - RthA Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - - - - - - - - - Max. - - - - 150 300 - - - - - - 4 pF 8 pF 6 dB 5 dB 70 250 200 K/W 1) 2N3905, 2N3906 Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz VCB = 5 V, IE = ie = 0, f = 100 kHz VEB = 0.5 V, IC = ic = 0, f = 100 kHz Noise figure - Rauschzahl VCE = 5 V, IC = 100 :A 2N3903 RG = 1 kS f = 10 Hz ...15.7 kHz 2N3904 Switching times - Schaltzeiten turn-on time turn-off time ICon = 10 mA, IBon = - IBoff = 1 mA Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 31 |
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