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| SHINDENGEN Super Fast Recovery Rectifiers Single SF6L20U 200V 6A FEATURES *oe Low noise *oe trr35ns *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) power supply *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 200 Average Rectified Forward Current 50Hz sine wave, R-load, Tc=126*Z IO 6 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 80 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 Mounting Torque F TOR (Recommended torque*0.3Nm) 0.5 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Forward Voltage VF IF =6.0A, Pulse measurement Reverse Current IR V=V , Pulse measurement R RM Reverse Recovery Time =0.5A,*@ I =1A trr IF R Thermal Resistance AEjc junction to case Ratings Max.1.1 Max.10 Max.35 Max.3.2 Unit *Z *Z V A A kV Nm Unit V EA ns *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF6L20U 100 Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] SF6L20U 10 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 8 0.3 0.2 6 0.05 0.1 0.5 SIN 4 2 0 0 2 4 6 8 10 Average Rectified Forward Current IO [A] Tj = Tjmax IO 0 tp D=tp /T T SF6L20U 10 DC Derating Curve Average Rectified Forward Current IO [A] D=0.8 8 0.5 6 SIN 0.3 0.2 0.1 2 0.05 4 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM IO 0 0 VR tp D=tp /T T SF6L20U Peak Surge Forward Capability IFSM 160 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 120 80 40 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SF6L20U Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 100 10 1 10 100 Reverse Voltage VR [V] |
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