 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE CORPORATION v01.0300 HMC136 GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz Features Chip Integrates Directly into MIC Designs 30 dB of Carrier Suppression Direct Modulation in the 4 - 8 GHz Band Functions also as a Phase Detector Typical Applications The HMC136 is suitable for: * Wireless Local Loop * LMDS & VSAT * Pt. to Pt. Radios * Test Equipment Functional Diagram General Description The HMC136 Bi-Phase Modulator is designed to phase-modulate an RF signal into reference and 180 degree states. Device input is at the RF port and output is at the LO port. The polarity of the bias current at the control port (IF port) defines the phase states. Excellent amplitude and phase balance provided by closely matched monolithic balun and diode circuits delivers 30 dB of carrier suppression in a tiny monolithic chip. The device also functions as a demodulator or phase comparator. As a demodulator, data emerges at the control port when a modulated signal at the RF port is compared to a reference signal at the LO port. As a phase comparator, the phase angle between two signals applied to the RF and LO ports is represented by an analog voltage at the control port. Except for carrier suppression, the data presented here was measured under static conditions in which a DC bias current (nominally 5 mA) is applied to the control port. 6 MODULATORS - CHIP Electrical Specifications, TA = +25 C, 5 mA Bias Current Parameter Frequency Band Insertion Loss Return Loss, RF and LO Ports Amplitude Balance Phase Balance Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p) Input Power for 1 dB Compression Third Order Intercept, Input Second Order Intercept, Input Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V at the control port). 25 4 10 25 2 2.5 Min. Typ. 4-8 8 3.0 0.1 4.0 30 8 15 35 5 10 0.5 6.0 10 Max. Units GHz dB dB dB deg dBc dBm dBm dBm mA 6-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC136 GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz GaAs MMIC Insertion Loss 0 SUB-HARMONICALLY Amplitude Balance 17 - 25 GHz PUMPED MIXER 2 AMPLITUDE BALANCE (dB) 5 INSERTION LOSS (dB) -5 1 -10 0 -15 -1 -2 -20 3 4 6 7 8 9 3 4 5 6 7 8 9 FREQUENCY (GHz) FREQUENCY (GHz) Phase Balance 10 8 6 PHASE BALANCE (Deg) 4 2 0 -2 -4 -6 -8 -10 3 4 5 6 7 8 9 FREQUENCY (GHz) Carrier Suppression * 50 CARRIER SUPPRESSION (dBc) 6 MODULATORS - CHIP 6-7 40 30 20 10 0 4 5 6 7 8 CARRIER FREQUENCY (GHz) Return Loss 0 RETURN LOSS (dB) -5 -10 -15 -20 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) * (For 1.4 Vp-p Square Wave Modulation at 1 MHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC136 GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz Compression vs Frequency * 12 10 INPUT P1dB (dBm) Compression vs Bias at 6 GHz 14 12 INPUT P1dB (dBm) 10 8 6 4 2 0 8 6 4 2 0 4 5 6 7 8 CARRIER FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 BIAS CURRENT (mA) 6 MODULATORS - CHIP Third Order Intercept vs Frequency * Third Order Intercept vs Bias at 6 GHz 25 20 INPUT IP3 (dBm) INPUT IP3 (dBm) 15 10 5 0 0 1 2 CARRIER FREQUENCY (GHz) 3 4 5 6 7 BIAS CURRENT (mA) 8 9 10 * (For 5 mA Bias Current) 6-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC136 GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz Suggested TTL Driver for a Bi-Phase Modulator +5 Vdc +2.5 Vdc MODULATOR I, Q PORTS *R 1 IA .01 uF VCC VCC HCT04 TTL V Z = 2V GND HC04 VA 0.6V GND 2.2K .01 uF HITTITE MODULATOR -2.5 Vdc Notes 1. VAAlternates Between + 2.4 Vdc IA = 2.4 - 0.6 = 5 mA 360 Ohm 2. HCT04 and HC04 are QMOS HEX Inverters. *R1 =300 to 620 2% Select R1 To Supply 3 to 6 mA to the IF Port. 6 MODULATORS - CHIP 6-9 Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BOND PAD SPACING IS .006" CENTER TO CENTER. 4. BACKSIDE METALIZATION: GOLD. 5. BACKSIDE METAL IS GROUND. 6. BOND PAD METALIZATION: GOLD. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
Price & Availability of HMC136
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |