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| NPN Silicon High-Voltage Transistors BF 720 BF 722 q q q q q Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 (PNP) Type BF 720 BF 722 Marking BF 720 BF 722 Ordering Code (tape and reel) Q62702-F1238 Q62702-F1306 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS 110 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol BF 720 VCE0 VCER VCB0 VEB0 IC ICM Ptot Tj Tstg - 300 300 5 Values BF 722 250 - 250 5 50 100 1.5 150 Unit V mA W C - 65 ... + 150 87 27 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BF 720 BF 722 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BF 722 Collector-emitter breakdown voltage IC = 10 A, RBE = 2.7 k BF 720 Collector-base breakdown voltage IC = 10 A, IB = 0 BF 720 BF 722 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 Collector-emitter cutoff current VCE = 200 V, RBE = 2.7 k VCE = 200 V, RBE = 2.7 k, TA = 150 C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 25 mA, VCE = 20 V Collector-emitter saturation voltage1) IC = 30 mA, IB = 5 mA AC characteristics Transition frequency IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 30 V, IC = 0, f = 1 MHz fT Cobo - - 100 0.8 - - MHz pF V(BR)CE0 V(BR)CER V(BR)CB0 300 250 V(BR)EB0 ICB0 ICER - - IEB0 hFE VCEsat - 50 - - - - - - 50 10 10 - 0.6 nA A A Values typ. max. Unit 250 300 - - - - V - - - - - - - 10 nA 5 - - V 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BF 720 BF 722 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector cutoff current ICB0 = f (TA) VCB = 200 V Collector current IC = f (VBE) VCE = 20 V Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 3 BF 720 BF 722 DC current gain hFE = f (IC) VCE = 20 V Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Cobo = f (VCB) IC = 0, f = 1 MHz Semiconductor Group 4 |
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