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DATA SHEET
MICRONAS
HAL810 Programmable Linear Hall Effect Sensor
Edition June 24, 2004 6251-536-3DS
MICRONAS
HAL 810
Contents Page 3 3 3 4 4 4 4 4 4 5 5 7 9 9 10 12 12 16 16 16 17 17 18 19 19 19 21 21 21 22 23 23 23 24 24 24 26 27 28 28 30 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.3.1. 2.3.2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 3.8. 3.9. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Introduction Major Applications Features Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Calibration of the Angle Sensor Specifications Outline Dimensions Dimensions of Sensitive Area Position of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Open-Circuit Detection Typical Characteristics Application Notes Application Circuit Measurement of a PWM Output Signal Temperature Compensation Undervoltage Behavior Ambient Temperature EMC and ESD Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History
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from -40 C up to 150 C. The HAL810 is available in the very small leaded packages TO92UT-1 and TO92UT-2.
Programmable Linear Hall Effect Sensor Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL810 is a member of the Micronas family of programmable linear Hall sensors. The linear output is provided as the duty cycle of a pulse-width modulated output signal (PWM signal). The HAL810 is a universal magnetic field sensor with a linear output based on the Hall effect. The IC is designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics, such as magnetic field range, sensitivity, output quiescent signal (output duty cycle at B = 0 mT), and output duty cycle range are programmable in a non-volatile memory. The HAL810 features a temperature-compensated Hall plate with chopped offset compensation, an A/D converter, digital signal processing, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit as analog offsets, temperature shifts, and mechanical stress do not lower the sensor accuracy. The HAL810 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer's manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be suited to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The sensor is designed for hostile industrial and automotive applications and operates with a supply voltage of typically 5 V in the ambient temperature range
1.1. Major Applications Due to the sensor's versatile programming characteristics, the HAL810 is the optimal system solution for applications such as: - contactless potentiometers, - rotary sensors, - distance measurements, - magnetic field and current measurement.
WARNING:
DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS.
1.2. Features - high-precision linear Hall effect sensor with digital signal processing - PWM output signal with a refresh rate of typically 125 Hz and up to 11 Bit resolution - multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function - open-circuit feature (ground and supply line break detection) - temperature characteristics programmable for matching all common magnetic materials - programmable clamping function - programming via modulation of the supply voltage - operation from -40 C up to 150 C ambient temperature - operation with 4.5 V to 5.5 V supply voltage in specification and functions with up to 8.5 V - operation with static magnetic fields and dynamic magnetic fields - overvoltage and reverse-voltage protection at all pins - magnetic characteristics extremely robust against mechanical stress - short-circuit protected push-pull output - EMC and ESD optimized design
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1.3. Marking Code The HAL810 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A HAL810 810A K 810K 1.6. Solderability
DATA SHEET
Package TO92UT-1/-2: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%.
1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended for the use in qualification tests or as production parts.
1.7. Pin Connections and Short Descriptions Pin No. 1 2 3 Pin Name VDD GND OUT OUT Type IN Short Description Supply Voltage and Programming Pin Ground Push-Pull Output
1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.5. on page 23.
1
VDD
OUT 3
1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A or K Package: UT for TO92UT-1/-2 Type: 810 Example: HAL810UT-K Type: 810 Package: TO92UT Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling".
2
GND
Fig. 1-1: Pin configuration
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ates a PWM output signal. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The PWM output is switched off during the communication. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the chopped offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins.
2. Functional Description 2.1. General Function The HAL810 is a monolithic integrated circuit which provides a pulse-width modulated output signal (PWM). The duty cycle of the PWM signal is proportional to the magnetic flux through the Hall plate. The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted to a pulse-width modulated output signal, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 7. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. As long as the LOCK register is not set, the output characteristics can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2-1). In the supply voltage range from 4.5 V to 5.5 V, the sensor gener-
HAL 810
8 VDD (V) 7 6 5
VDD VOUT (V)
VDD GND
OUT
digital protocol
PWM
Fig. 2-1: Programming with VDD modulation
VDD Internally stabilized Supply and Protection Devices
Temperature Dependent Bias
Oscillator
Open-circuit detection
Protection Devices
Switched Hall Plate
A/D Converter
Digital Signal Processing
Output Conditioning
100 OPA
OUT
EEPROM Memory Supply Level Detection Lock Control GND Digital Output
10 k
Fig. 2-2: HAL810 block diagram
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DATA SHEET
ADC-READOUT Register 14 bit
Digital Output
Digital Signal Processing
A/D Converter
Digital Filter
Multiplier
Adder
Limiter
Output Conditioning
TC 6 bit
TCSQ 5 bit
MODE Register RANGE FILTER 3 bit 3 bit
DCSENSITIVITY 14 bit
DCOQ 11 bit
MINDUTY 10 bit
MAXDUTY 11 bit
LOCK 1 bit
Micronas Registers
EEPROM Memory
Lock Control
Fig. 2-3: Details of EEPROM and Digital Signal Processing
% 100 Output Duty Cycle 80
Range = 30 mT Filter = 500 Hz Max-Duty = 97%
% 100 Max-Out = 90% Output Duty Cycle 80
Range = 100 mT Filter = 2 kHz
DCSensitivity = 0.3 60 60 DCSensitivity = -1.36 DCOQ = -10% 40 DCOQ = 50% 20 20 Min-Out = 10% Min-Duty = 3% 0 -40 -30 -20 -10 0 10 20 B 40
30
40 mT
0 -150 -100 -50
0
50 B
100
150 mT
Fig. 2-4: Example for output characteristics
Fig. 2-5: Example for output characteristics
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2.2. Digital Signal Processing and EEPROM The DSP is the main part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-3. Terminology: MIN-DUTY: name of the register or register value Min-Duty: name of the parameter
Filter = 2 kHz 2000 1500 ADCREADOUT 1000 500 0 -500 -1000 -1500 -2000 -200-150-100 -50 Range 150 mT Range 90 mT Range 60 mT Range 30 mT 0 50 100 150 200 mT B
The EEPROM registers consist of three groups: Group 1 contains the registers for the adaptation of the sensor to the magnetic circuit: Mode for selecting the magnetic field range and filter frequency, TC and TCSQ for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: DCSENSITIVITY, DCOQ, MIN-DUTY, and MAX-DUTY. The output characteristic of the sensor is defined by these 4 parameters (see Fig. 2-5 and Fig. 2-6 for examples). - The parameter DCOQ (Output Quiescent Duty Cycle) corresponds to the duty cycle at B = 0 mT. - The parameter DCSensitivity defines the magnetic sensitivity:
DCSensitivity = DCOUT * 2048 ADC-Readout * 100%
Fig. 2-6: Example for output characteristics
- The output duty cycle can be calculated as:
DCOUT = DCSensitivity * ADC-Readout / 2048 * 100% + DCOQ
The output duty cycle range can be clamped by setting the registers MIN-DUTY and MAX-DUTY in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Group 3 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. Positive values correspond to a magnetic north pole on the branded side of the package. The digital signal is filtered in the internal low-pass filter and is readable in the ADC-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from -30 mT...+30 mT up to -150 mT...+150 mT.
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output duty cycle and limited according to Min-Duty and Max-Duty. The result is converted to the duty cycle of a pulse width modulated signal and stabilized by a push-pull output transistor stage. The ADC-Readout at any given magnetic field depends on the programmed magnetic field range but also on the filter frequency. Fig. 2-6 shows the typical ADC-Readout values for the different magnetic field ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum ADCReadout values and the filter frequency setting is listed in the following table.
Filter Frequency 80 Hz 160 Hz 500 Hz 1 kHz 2 kHz
ADC-Readout range
-3968...3967 -1985...1985 -5292...5290 -2646...2645 -1512...1511
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TC and TCSQ Note: During application design, it should be taken into consideration that the maximum and minimum ADC-READOUT is not exceeded during calibration and operation of the Hall IC. Consequently, the maximum and minimum magnetic fields that may occur in the operational range of a specific application should not saturate the A/ D converter. Please note that the A/D converter saturates at magnetic fields well above, respectively below, the magnetic range limits. This large safety band between specified magnetic range and true operational range helps to avoid saturation.
DATA SHEET
Range The RANGE bits are the three lowest bits of the MODE register; they define the magnetic field range of the A/D converter. Magnetic Field Range -30 mT...30 mT -40 mT...40 mT -60 mT...60 mT -75 mT...75 mT -80 mT...80 mT -90 mT...90 mT -100 mT...100 mT -150 mT...150 mT
Range
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaptation is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about -3100 ppm/K up to 400 ppm/K and quadratic coefficients from about -5 ppm/K to 5 ppm/K. Please refer to Section 4.3. on page 22 for the recommended settings for different linear temperature coefficients.
DCSensitivity The DCSENSITIVITY register contains the parameter for the multiplier in the DSP. The DCSensitivity is programmable between -4 and 4. The register can be changed in steps of 0.00049. DCSensitivity = 1 corresponds to an increase of the output duty cycle by 100% if ADC-Readout increases by 2048. For all calculations, the digital value of the A/D converter is used. This digital information is derived from the magnetic signal and is readable from the ADCREADOUT register.
DCSensitivity = DCOUT * 2048 ADC-Readout * 100%
0 4 5 1 6 2 7 3
DCOQ Filter The FILTER bits are the three highest bits of the MODE register; they define the -3 dB frequency of the digital low pass filter.
-3
The DCOQ register contains the parameter for the adder in the DSP. DCOQ is the output duty cycle without external magnetic field (B = 0 mT, respectively ADC-Readout = 0) and programmable from -100% to 100%. The register can be changed in steps of 0.0976%.
dB Frequency
Filter
80 Hz 160 Hz 500 Hz 1 kHz 2 kHz
0 1 2 3 4
Note: If DCOQ is programmed as negative values, the maximum output duty cycle is limited to:
DCOUTmax = DCOQ+100%
For calibration in the system environment, a 2-point adjustment procedure (see Section 2.3.) is recommended. The suitable DCSensitivity and DCOQ values for each sensor can be calculated individually by this procedure.
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2.3. Calibration Procedure 2.3.1. General Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. In this section, programming of the sensor using this programming tool is explained. Please refer to Section 5. on page 24 for information about programming without this tool. For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2-7 for an example). When using the application kit, the calibration can be done in three steps:
Clamping Function The output duty cycle range can be clamped in order to detect failures like shorts of the output signal to VDD or GND or an open circuit. The MIN-DUTY register contains the parameter for the lower limit. The minimum duty cycle is programmable between 0% and 50% in steps of 0.0488%. The MAX-DUTY register contains the parameter for the upper limit. The maximum duty cycle is programmable between 0% and 100% in steps of 0.0488%.
LOCKR By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit.
Step 1: Input of the registers which need not be adjusted individually Warning: This register cannot be reset! The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping duty cycles are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. - Filter (according to the maximum signal frequency) - Range (according to the maximum magnetic field at the sensor position) - TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) - Min-Duty and Max-Duty (according to the application requirements) Write and store the appropriate settings into the HAL810 registers.
ADC-READOUT This 14-bit register delivers the actual digital value of the applied magnetic field before the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment.
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Step 2: Calculation of DCOQ and DCSensitivity The calibration points 1 and 2 can be set inside the specified range. The corresponding values for DC1 and DC2 result from the application requirements.
Min-Duty DC1,2 Max-Duty
DATA SHEET
2.3.2. Calibration of the Angle Sensor The following description explains the calibration procedure using an angle sensor as an example. The required output characteristic is shown in Fig. 2-7. - the angle range is from -25 to 25 - temperature coefficient of the magnet: -500 ppm/K
For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the duty cycle between calibration point 1 and calibration point 2 should be more than 70%. Set the system to calibration point 1 and read the register ADC-READOUT. The result is ADC-Readout1. Now, set the system to calibration point 2, read the register ADC-READOUT, and get ADC-Readout2. With these readouts and the nominal duty cycles DC1 and DC2, for the calibration points 1 and 2, respectively, the values for DCSensitivity and DCOQ are calculated as:
DC2 - DC1 DCSensitivity = ADC-Readout2 - ADC-Readout1 * 2048 100%
% 100 Output Duty Cycle 80 Max-Duty = 95% Calibration Point 1
60
40
DCOQ = DC1 -
ADC-Readout1 * DCSensitivity * 100% 2048
20 Min-Duty = 5% Calibration Point 2 0 -30 -20 -10 0 10 20 Angle 30
This calculation has to be done individually for each sensor. Next, write and store the calculated values for DCSensitivity and DCOQ into the IC for adjusting the sensor. The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary.
Fig. 2-7: Example for output characteristics
Step 3: Locking the Sensor The last step is activating the lock function with the "LOCK" command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands.
Warning: This register cannot be reset!
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Software Calibration: Use the menu CALIBRATE from the PC software and enter the values 95% for DC1 and 5% for DC2. Set the system to calibration point 1 (angle 1 = -25), press the key "Read ADC-Readout1", set the system to calibration point 2 (angle 2 = 25), press the key "Read ADC-Readout2", and hit the button "Calculate". The software will then calculate the appropriate DCOQ and DCSensitivity. This calculation has to be done individually for each sensor. Now, write the calculated values with the "write and store" command into the HAL810 for programming the sensor.
Step 1: Input of the registers which need not be adjusted individually The register values for the following registers are given for all applications: - Filter Select the filter frequency: 500 Hz - Range Select the magnetic field range: 30 mT - TC For this magnetic material: 6 - TCSQ For this magnetic material: 14 - Min-Duty For our example: 5% - Max-Duty For our example: 95% Enter these values in the software, and use the "write and store" command for permanently writing the values in the registers.
Step 3: Locking the Sensor The last step is to activate the lock function with the "lock" command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands.
Step 2: Calculation of DCOQ and DCSensitivity There are two ways to calculate the values for DCOQ and DCSensitivity. Manual Calculation: Set the system to calibration point 1 (angle 1 = -25) and read the register ADC-Readout. For our example, the result is ADC-Readout1 = -2500. Next, set the system to calibration point 2 (angle 2 = 25), and read the register ADC-Readout again. For our example, the result is ADCReadout2 = +2350. With these measurements and the targets DC1 = 95% and DC2 = 5%, the values for DCSensitivity and DCOQ are calculated as
DCSensitivity = 5% - 95% 2048 = -0.3800 * 2350 + 2500 100% -2500*(-0.3800)*100% = 48.61% 2048
Warning: This register cannot be reset!
DCOQ = 95% -
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3. Specifications 3.1. Outline Dimensions
DATA SHEET
Fig. 3-1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads Weight approximately 0.12 g
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Fig. 3-2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g
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DATA SHEET
Fig. 3-3: TO92UT-2: Dimensions ammopack inline
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Fig. 3-4: TO92UT-1: Dimensions ammopack inline, spread
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3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm
DATA SHEET
3.3. Position of Sensitive Areas TO92UT-1/-2 x y Bd center of the package 1.5 mm nominal 0.3 mm
3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VDD -IDD VOUT VOUT - VDD IOUT tSh TJ NPROG
1) 2) 3) 4) 5)
Parameter Supply Voltage Supply Voltage Reverse Supply Current Output Voltage Excess of Output Voltage over Supply Voltage Continuous Output Current Output Short Circuit Duration Junction Temperature Range Number of Programming Cycles
Pin No. 1 1 1 3 3,1 3 3
Min. -8.5 -14.41) 2) - -55) -55)
Max. 8.5 14.41) 2) 501) 8.53) 14.43) 2) 2
Unit V V mA V V mA min C C
-10 - -40 -40 -
10 10 1704) 150 100
as long as TJmax is not exceeded t < 10 min (VDDmin = -15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to -14 V) t < 1000h internal protection resistor = 100
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3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%.
3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions/Characteristics" is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IOUT RL CL Parameter Supply Voltage Continuous Output Current Load Resistor Load Capacitance Pin No. 1 3 3 3 Min. 4.5 -1 4.5 0.33 Typ. 5 - - 10 Max. 5.5 1 - 100 Unit V mA k nF
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3.6. Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V.
Symbol IDD VDDZ VOZ Parameter Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Duty Cycle Resolution INL TK DCMINDUTY DCMAXDUTY VOUTH VOUTL fPWM fADC tPOD ROUT Non-Linearity of Output Duty Cycle over Temperature Variation of Linear Temperature Coefficient Accuracy of Minimum Duty Cycle over Temperature Range Accuracy of Maximum Duty Cycle over Temperature Range Output High Voltage Output Low Voltage PWM Output Frequency over Temperature Range Internal ADC Frequency over Temperature Range Power-Up Time (Time to reach valid duty cycle) Output Resistance over Recommended Operating Range Thermal Resistance Junction to Soldering Point Pin No. 1 1 3 3 3 3 3 3 3 3 - - - 3 Min. - - - - -0.5 -400 -1 -1 - - 105 110 - - Typ. 7 17.5 17 - 0 0 0 0 4.8 0.2 125 128 - 1 Max. 10 20 19.5 11 0.5 400 1 1 - - 145 150 25 10 Unit mA V V bit % ppm/k % % V V Hz kHz ms Conditions
DATA SHEET
IDD = 25 mA, TJ = 25 C, t = 20 ms IO = 10 mA, TJ = 25 C, t = 20 ms
1) 2)
if TC and TCSQ suitable for the application
VDD = 5 V, -1 mA IOUT 1 mA VDD = 5 V, -1 mA IOUT 1 mA
VOUTLmax VOUT VOUTHmin
RthJA TO92UT-1, TO92UT-2
1) 2)
-
-
150
200
K/W
if the Hall IC is programmed accordingly if more than 50% of the selected magnetic field range are used
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3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V.
Symbol BOffset BOffset/T Parameter Magnetic Offset Magnetic Offset Change due to TJ Pin No. 3 Min. -0.5 -10 Typ. 0 0 Max. 0.5 10 Unit mT T/K Test Conditions B = 0 mT, TJ = 25 C, unadjusted sensor B = 0 mT
3.8. Open-Circuit Detection at TJ = -40 C to +170 C, Typical Characteristics for TJ = 25 C
Symbol VOUT VOUT Parameter Output voltage at open VDD line Output voltage at open GND line Pin No. 3 3 Min. 0 4.7 Typ. 0 4.8 Max. 0.2 5 Unit V V Test Conditions VDD = 5 V RL = 10 k to GND VDD = 5 V RL = 10 k to GND
3.9. Typical Characteristics
mA 20 15 IDD 10 5 0 -5 -10 -15 -20 -15 -10 IDD
mA 10 VDD = 5 V
8
6
4
TA = -40 C TA = 25 C TA=150 C -5 0 5 10 VDD 15 20 V
2
0 -50
0
50
100
150 TA
200 C
Fig. 3-5: Typical current consumption versus supply voltage
Fig. 3-6: Typical current consumption versus ambient temperature
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mA 10 TA = 25 C VDD = 5 V IDD 8
% 120 1/sensitivity 100
80 6 60 4 40 TC = 16, TCSQ = 8 2 20 TC = 0, TCSQ = 12
TC = -20, TCSQ = 12 TC = -31, TCSQ = 0 0 -1.5 -1.0 -0.5 0.0 0.5 1.0 IOUT 1.5 mA 0 -50 0 50 100 150 TA 200 C
Fig. 3-7: Typical current consumption versus output current
Fig. 3-9: Typical 1/sensitivity versus ambient temperature
mT 1.0 0.8 BOffset 0.6 0.4 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -1 -50 200 C TC = 16, TCSQ = 8 TC = 0, TCSQ = 12
% 1.0 0.8 INL 0.6 0.4 0.2 -0.0 -0.2 -0.4 -0.6 Range = 30 mT -0.8 -1 -40
TC = -20, TCSQ = 12
0
50
100
150 TA
-20
0
20 B
40 mT
Fig. 3-8: Typical magnetic offset versus ambient temperature
Fig. 3-10: Typical nonlinearity versus magnetic field
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4.2. Measurement of a PWM Output Signal The magnetic field information is coded in the dutycycle of the PWM signal. The duty-cycle is defined as the ratio between the high time "s" and the period "d" of the PWM signal (see Fig. 4-2). Please note: The PWM signal is updated with the falling edge. If the duty-cycle is evaluated with a microcontroller, the trigger-level will be the falling edge of the PWM signal.
4. Application Notes 4.1. Application Circuit For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor each between ground and the supply voltage, respectively the output pin. In addition, the input of the controller unit should be pulleddown with a 4.7 kOhm resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage.
Out Vhigh
d s
VDD
Vlow
OUT HAL810 4.7 nF 4.7 nF GND 4.7 nF 4.7 k C
Update Fig. 4-2: Definition of PWM signal
time
Fig. 4-1: Recommended application circuit
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4.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. The HAL8x5 and HAL810 contain the same temperature compensation circuits. If an optimal setting for the HAL8x5 is already available, the same settings may be used for the HAL810.
DATA SHEET
Temperature Coefficient of Magnet (ppm/K) -810 -860 -910 -960 -1020 -1070 -1120 -1180
TC
TCSQ
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 -16 -17 -18 -19 -20 -21 -22 -24 -25 -26 -27 -28 -29 -30 -31
15 16 16 16 17 17 17 18 18 19 19 20 20 20 21 21 22 22 23 23 24 24 25 26 27 27 28 28 29 30 31
Temperature Coefficient of Magnet (ppm/K) 400 300 200 100 0 -50 -90 -130 -170 -200 -240 -280 -320 -360 -410 -450 -500 -550 -600 -650 -700 -750
TC
TCSQ
-1250 -1320
31 28 24 21 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
6 7 8 9 10 10 11 11 11 12 12 12 13 13 13 13 14 14 14 14 15 15
-1380 -1430 -1500 -1570 -1640 -1710 -1780 -1870 -1950 -2030 -2100 -2180 -2270 -2420 -2500 -2600 -2700 -2800 -2900 -3000 -3100
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DATA SHEET
HAL 810
4.6. EMC and ESD The HAL810 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V on-board system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4-1 is recommended. Applications with this arrangement passed the EMC tests according to the product standard ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances). Please contact Micronas for the detailed investigation reports with the EMC and ESD results.
4.4. Undervoltage Behavior In a voltage range of below 4.5 V to approximately 3.5 V, the typical operation of the HAL810 is given and predictable for the most sensors. Some of the parameters may be out of the specification. Below about 3.5 V, the digital processing is reset. If the supply voltage rises above approx. 3.5 V once again, a startup time of about 20 s elapses, for the digital signal processing to occur.
4.5. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * RthJA For typical values, use the typical parameters. For worst case calculation, use the maximum parameters for IDD and Rth, and the maximum value for VDD from the application. For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the temperature difference T = 11 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax -T
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5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical "0" is coded as no voltage change within the bit time. A logical "1" is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs.
DATA SHEET
- Read a register (see Fig. 5-3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. - Programming the EEPROM cells (see Fig. 5-4) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage.
tr VDDH logical 0 VDDL tp0
tf tp0
or
5.2. Definition of the Telegram Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are different telegram formats: - Write a register (see Fig. 5-2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output.
logical 1
VDDH tp0 VDDL tp1 or
tp1 tp0
Fig. 5-1: Definition of logical 0 and 1 bit
Table 5-1: Telegram parameters
Symbol VDDL VDDH tr tf tp0 tpOUT tp1 VDDPROG tPROG trp tfp tw Parameter Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise time Fall time Bit time on VDD Bit time on output pin Voltage Change for logical 1 Supply Voltage for Programming the EEPROM Programming Time for EEPROM Rise time of programming voltage Fall time of programming voltage Delay time of programming voltage after Acknowledge Pin 1 1 1 1 1 3 1, 3 1 1 1 1 1 1.7 2 50 12.4 95 0.2 0 0.5 0.7 1.75 3 65 12.5 100 0.5 Min. 5 6.8 Typ. 5.6 8.0 Max. 6 8.5 0.05 0.05 1.8 4 80 12.6 105 1 1 1 Unit V V ms ms ms ms % V ms ms ms ms tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT Remarks
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DATA SHEET
HAL 810
WRITE Sync VDD Acknowledge VOUT COM CP ADR AP DAT DP
Fig. 5-2: Telegram for coding a Write command
READ Sync VDD Acknowledge VOUT DAT DP COM CP ADR AP
Fig. 5-3: Telegram for coding a Read command
trp VDDPROG ERASE, PROM, and LOCK Sync VDD Acknowledge VOUT tw COM CP ADR AP
tPROG
tfp
Fig. 5-4: Telegram for coding the EEPROM programming
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5.3. Telegram Codes Sync Bit Each telegram starts with the Sync Bit. This logical "0" pulse defines the exact timing for tp0. Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5-2 shows the available commands and the corresponding codes for the HAL810. Data Bits (DAT)
DATA SHEET
The 14 Data Bits contain the register information. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. In the Write command, the last bits are valid. If, for example, the TC register (6 bits) is written, only the last 6 bits are valid. In the Read command, the first bits are valid. If, for example, the TC register (6 bits) is read, only the first 6 bits are valid.
Command Parity Bit (CP) Data Parity Bit (DP) This parity bit is "1" if the number of zeros within the 3 Command Bits is uneven. The parity bit is "0", if the number of zeros is even. This parity bit is "1" if the number of zeros within the binary number is even. The parity bit is "0" if the number of zeros is uneven.
Address Bits (ADR) Acknowledge The Address code contains 4 bits and is a binary number. Table 5-3 shows the available addresses for the HAL810 registers. After each telegram, the output answers with the Acknowledge signal. This logical "0" pulse defines the exact timing for tpOUT.
Address Parity Bit (AP) This parity bit is "1" if the number of zeros within the 4 Address bits is uneven. The parity bit is "0" if the number of zeros is even.
Table 5-2: Available commands Command READ WRITE PROM ERASE LOCK Code 2 3 4 5 7 Explanation read a register write a register program all nonvolatile registers (except the lock bits) erase all nonvolatile registers (except the lock bits) lock the whole device and disable programming
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DATA SHEET
HAL 810
Two-complementary number: The first digit of positive numbers is "0", the rest of the number is a binary number. Negative numbers start with "1". In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add "1". Example:
5.4. Number Formats Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal. Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example:
0101001 represents +41 decimal 1010111 represents -41 decimal
0101001 represents +41 decimal 1101001 represents -41 decimal
Table 5-3: Available register addresses Register MIN-DUTY MAX-DUTY DCOQ DCSENSITIVITY MODE LOCKR ADC-READOUT TC TCSQ Code 1 2 3 4 5 6 7 11 12 Data Bits 10 11 11 14 6 1 14 6 5 Format binary binary two compl. binary signed binary binary binary two compl. binary signed binary binary Customer read/write/program read/write/program read/write/program read/write/program read/write/program lock read read/write/program read/write/program Remark Minimum Duty Cycle Maximum Duty Cycle Output Duty Cycle at zero ADC-Readout Increase of Output Duty Cycle with ADC-Readout Range and filter settings Lock Bit for customer registers Output of A/D converter (internal magnetic signal) Temperature compensation coefficient Temperature compensation coefficient
Table 5-4: Micronas registers (read only for customers) Register OFFSET FOSCAD SPECIAL Code 8 9 13 Data Bits 5 5 8 Format two compl. binary binary Remark ADC offset adjustment Oscillator frequency adjustment special settings
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5.5. Register Information MIN-DUTY The register range is from 0 up to 1023. - The register value is calculated with:
MIN-DUTY = Min-Duty 100% * 2048
DATA SHEET
ADC-READOUT - This register is read only. - The register range is from -8192 up to 8191.
5.6. Programming Information If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands is not important. ERASE and PROM act on all registers in parallel. If all HAL810 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board.
MAX-DUTY - The register range is from 0 up to 2047. - The register value is calculated with:
MAX-DUTY = Max-Duty 100% * 2048
DCOQ - The register range is from -1024 up to 1023. - The register value is calculated with:
DCOQ = DCOQ 100% * 1024
DCSENSITIVITY - The register range is from -8192 up to 8191. - The register value is calculated with:
DCSENSITIVITY = DCSensitivity * 2048
TC and TCSQ - The TC register range is from -31 up to 31. - The TCSQ register range is from 0 up to 31. Please refer Section 4.3. on page 22 for the recommended values.
Note: For production and qualification tests, it is strongly recommended to set the LOCK bit after final adjustment and programming of HAL810. The LOCK function is active after the next power-up of the sensor. Micronas also recommends sending an additional ERASE command after sending the LOCK command. The success of the Lock Process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD.
MODE - The register range is from 0 up to 63 and contains the settings for FILTER and RANGE:
MODE = FILTER * 8 + RANGE
Please refer Section 2.2. on page 7 for the available FILTER and RANGE values.
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DATA SHEET
HAL 810
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HAL 810
6. Data Sheet History 1. Data Sheet: "HAL 810 Programmable Linear Hall Effect Sensor", Aug. 16, 2002, 6251-536-1DS. First release of the data sheet. 2. Data Sheet: "HAL 810 Programmable Linear Hall Effect Sensor", Nov. 22, 2002, 6251-536-2DS. Second release of the data sheet. Major changes: - Fig. 2-3: Diagram "Details of EEPROM and Digital Signal Processing" changed - Fig. 2-5: Diagram "Example for output characteristics" changed - DCOQ register programmable from -100% to 100% in steps of 0.0976% - Clamping function: minimum duty cycle programmable between 0% and 50% in steps of 0.0488%, maximum duty cycle programmable between 0% and 100% in steps of 0.0488% - Changes in Register Information. 3. Data Sheet: "HAL 810 Programmable Linear Hall Effect Sensor", June 24, 2004, 6251-536-3DS. Third release of the data sheet. Major changes: - new package diagram for TO92UT-1 - package diagram for TO92UT-2 added - ammopack diagrams for TO92UT-1/-2 added - Section 4.2. "Measurement of a PWM Output Signal" added
DATA SHEET
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-536-3DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
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