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| Composite Transistors XN04602 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Features * Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half 3 2 1 (0.65) 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 6 1.50+0.25 -0.05 2.8+0.2 -0.3 Unit: mm 0.16+0.10 -0.06 0.30+0.10 -0.05 Basic Part Number * 2SD0602A + 2SB0710A 0.50+0.10 -0.05 10 1.1+0.2 -0.1 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 5 0.5 1 -60 -50 -5 - 0.5 -1 300 150 -55 to +150 Unit V V V A A V Tr2 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 0 to 0.1 1.1+0.3 -0.1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 4A Internal Connection 4 5 6 Tr1 V V A A mW C C 3 2 1 0.40.2 5 Publication date: December 2003 SJJ00261BED 1 XN04602 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 40 0.35 200 6 15 0.60 V MHz pF Min 60 50 5 0.1 340 Typ Max Unit V V V A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement * Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage * Base-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -10 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 85 40 - 0.35 - 0.60 -1.1 200 6 15 -1.5 V V MHz pF Min -60 -50 -5 - 0.1 340 Typ Max Unit V V V A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Common characteristics chart PT Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJJ00261BED XN04602 Characteristics charts of Tr1 IC VCE 0.8 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.8 0.7 VCE = 10 V Ta = 25C IC I B Collector-emitter saturation voltage VCE(sat) (V) 1 VCE(sat) IC IC / IB = 10 Collector current IC (A) Collector current IC (A) 0.6 0.6 0.5 0.4 0.3 0.2 0.1 0.4 3 mA 10-1 Ta = 75C 0.2 2 mA 25C -25C Ta = 25C 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 10-2 10-2 10-1 1 10 102 Collector-emitter voltage VCE (V) Base current IB (mA) Collector current IC (mA) VBE(sat) IC 10 hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 250 Ta = 75C 200 25C 150 -25C Cob VCB 102 f = 1 MHz Ta = 25C Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 1 Ta = -25C 75C 25C Forward current transfer ratio hFE 10 100 50 10-1 10 102 103 0 1 10 102 103 1 0 10 20 30 40 Collector current IC (mA) Collector current IC (mA) Collector-base voltage VCB (V) SJJ00261BED 3 XN04602 Characteristics charts of Tr2 IC VCE - 0.8 Ta = 25C - 0.9 mA IB = -1.0 mA - 0.8 mA - 0.7 mA - 0.6 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.4 - 0.2 mA -120 -140 VCE = -10 V Ta = 25C IC I B Collector-emitter saturation voltage VCE(sat) (V) -1 VCE(sat) IC IC / IB = 10 Collector current IC (mA) Collector current IC (A) -100 -80 -60 -40 -20 -10-1 Ta = 75C -25C 25C - 0.2 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6 -10-2 -10-1 -1 -10 -102 Collector-emitter voltage VCE (V) Base current IB (mA) Collector current IC (mA) VBE(sat) IC -10 hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 400 VCE = -10 V 102 Cob VCB f = 1 MHz Ta = 25C Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 Forward current transfer ratio hFE Ta = 75C 300 25C 200 -25C -1 Ta = -25C 75C 25C 10 100 -10-1 -1 -10 -102 -103 0 -1 -10 -102 -103 1 0 -10 -20 -30 -40 Collector current IC (mA) Collector current IC (mA) Collector-base voltage VCB (V) 4 SJJ00261BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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