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| OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES * * * * * Two Isolated MOSFETs In A Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM6214SS OM6215SS OM6216SS OM6217SS VDS 100V 200V 400V 500V RDS(ON) .065 .095 .3 .4 ID(MAX) 30A 25A 15A 13A 3.1 SCHEMATIC CONNECTION DIAGRAM FET#1 D S G G FET#2 S D 4 11 R4 Supersedes 1 07 R3 3.1 - 109 3.1 OM6214SS - OM6217SS ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 .09 30 1.1 0.1 0.2 2.0 100 TC = 25 unless otherwise noted ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 25 0.1 0.2 2.0 200 TC = 25 unless otherwise noted STATIC P/N OM6214SS (Per FET) (100 Volt) Min. Typ. Max. Units Test Conditions V 4.0 100 0.25 1.0 V nA mA mA A 1.3 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C STATIC P/N OM6215SS (Per FET) (200 Volt) Min. Typ. Max. Units Test Conditions V 4.0 100 0.25 1.0 V nA mA mA A 1.36 1.52 .085 .095 0.14 0.17 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 m VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 VDS(on) Static Drain-Source On-State .055 .065 0.11 Ciss Coss Crss td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2700 1300 470 28 45 100 50 pF pF pF ns ns ns ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 2.5 V ns - 140 A - 30 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) gfs Forward Transductance1 9.0 10 S(W ) VDS 2 VDS(on), ID = 20 A VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V (MOSFET) switching times are essentially independent of operating temperature. gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 8.0 12.5 2400 600 250 25 60 85 38 S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 - 25 - 100 -2 A A V ns TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) 3.1 - 110 DYNAMIC DYNAMIC Modified MOSPOWER symbol showing G D the integral P-N Junction rectifier. S TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 0.25 15 2.0 0.1 0.2 2.0 400 TC = 25 unless otherwise noted ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 13 2.1 0.3 0.1 0.2 2.0 500 TC = 25 unless otherwise noted STATIC P/N OM6216SS (Per FET) (400 Volt) Min. Typ. Max. Units Test Conditions V 4.0 100 0.25 1.0 V nA mA mA A 2.4 0.3 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A, TC = 125 C STATIC P/N OM6217SS (Per FET) (500 Volt) Min. Typ. Max. Units Test Conditions V 4.0 100 0.25 1.0 V nA mA mA A 2.8 0.4 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TC = 125 C VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 VDS(on) Static Drain-Source On-State 0.50 0.60 0.66 0.88 gfs Ciss Coss Crss td(on) tr td(off) tf 8.0 9.6 2900 450 150 30 40 80 30 S(W ) VDS 2 VDS(on), ID = 58A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID @ 8.0 A Rg =5.0 W , VGS =10V (MOSFET) switching times are essentially independent of operating temperature. gfs Ciss Coss Crss td(on) tr td(off) tf 6.0 7.2 2600 280 40 30 46 75 31 S(W ) VDS 2 VDS(on), ID = 7 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5.0 W , VGS = 10 V (MOSFET) switching times are essentially independent of operating temperature. Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 1.6 V ns - 60 A - 15 A Modified MOSPOWER symbol showing G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 13 - 52 - 1.4 A A V ns the integral P-N Junction rectifier. TC = 25 C, IS = -15 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) (W ) 3.1 - 111 DYNAMIC Forward Transductance1 DYNAMIC Forward Transductance1 Modified MOSPOWER symbol showing G D the integral P-N OM6214SS - OM6217SS Junction rectifier. S TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms 3.1 OM6214SS - OM6217SS ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter VDS VDGR ID @ TC = 25C ID @ TC = 100C IDM PD @ TC = 25C PD @ TC = 100C Junction To Case Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 OM6214SS OM6215SS OM6216SS OM6217SS Units 100 100 30 20 140 125 50 1.0 .025 200 200 25 16 100 125 50 1.0 .025 400 400 15 9 60 125 50 1.0 .025 500 500 13 8 52 125 50 1.0 .025 V V A A A W W W/C W/C Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor1 Junction To Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 -55 to 150 -55 to 150 300 300 300 C C 1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%. THERMAL RESISTANCE (Per FET at TA = 25C) RthJC RthJA Junction-to-Case Junction-to-Ambient 1.0 40 C/W C/W Free Air Operation POWER DERATING (Per Device) PD - POWER DISSIPATION (WATTS) 180 150 120 90 60 30 0 0 25 50 75 100 125 150 175 MECHANICAL OUTLINE 1.375 .770 .302 .265 .752 REF. .040 3.1 RqJC = 1.0C/W .118 .150 DIA. THRU 2 PLACES .487 .500 MIN. .200 TYP. 1.000 .060 DIA.TYP. 6 PLACES .188 REF. .140 TYP. .270 MAX. TC - CASE TEMPERATURE ( C) 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 |
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