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| Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.60.15 2.54 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type 26.31.0 24.31.0 5.250.3 1.5 1.0 7.650.2 o5.00.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 -25 to +85 - 40 to +100 Unit mW mA A V C C o6.00.2 Absolute Maximum Ratings (Ta = 25C) 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO * Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 5 typ 8 950 50 1.3 35 25 max 0.60.15 Unit mW nm nm P VF IR Ct 1.6 10 V A pF deg. * PO Classifications Class PO (mW) R 5 to 8 S >7 1 LN66L Infrared Light Emitting Diodes IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 120 IF -- VF Ta = 25C 100 IF (mA) IFP (A) 100 IF (mA) Forward current 10 -1 1 10 10 2 10 Allowable forward current 80 80 Pulse forward current 1 60 60 10 -1 40 40 20 10 -2 20 0 - 25 0 20 40 60 80 100 10 -3 10 -2 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 PO -- Ta IF = 50mA PO VF (V) 10 2 (1) 10 1.2 50mA 10mA PO Relative radiant power 1 10 -1 10 -2 - 40 IF = 100mA Relative radiant rower Forward voltage 10 3 10 4 0.8 1 (2) 0.4 10 -1 10 -2 1 10 10 2 0 - 40 0 40 80 120 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 90 10 20 Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) P (nm) 30 Peak emission wavelength 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 20 920 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 Infrared Light Emitting Diodes LN66L Frequency characteristics 10 Ta = 25C 1 Modulation output 10 -1 10 -2 10 -3 10 10 2 10 3 10 4 Frequency f (kHz) 3 |
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