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| AP2603Y Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device SOT-26 D D D D S P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -20V 65m -5.0A ID Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 12 -5 -4 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200129043 AP2603Y Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. -0.1 Max. Units 53 65 120 250 -1.2 -1 -10 100 16 1200 V V/ m m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A 9 10.6 2.32 3.68 5.9 3.6 32.4 2.6 740 167 126 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= 12V ID=-4.2A VDS=-16V VGS=-4.5V VDS=-15V ID=-4.2A RG=6,VGS=-10V RD=3.6 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.2A, VGS=0V IS=-4.2A, VGS=0V, dI/dt=100A/s Min. - Typ. 27.7 22 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad. AP2603Y 40 36 T A =25 C -5.0V 30 o 32 TA=150oC -5.0V -4.0V 28 -ID , Drain Current (A) -4.0V -ID , Drain Current (A) 24 65m -3.0V 20 20 -3.0V 16 12 10 8 V G = -2.0V 0 0 1 2 3 4 5 6 7 8 9 4 V G = -2.0V 0 1 2 3 4 5 6 7 0 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 220 1.8 180 I =-4.2A I DD =-4.2A T A =25o o C T A =25 C Normalized RDS(ON) 0 2 4 6 8 10 12 1.6 I D = -4.2A V GS = -4.5V 1.4 RDS(ON) (m ) 140 1.2 100 1 60 0.8 20 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 10 1 1 T j =150 o C 0.1 T j =25 o C -VGS(th) (V) 0.5 -IS(A) 2.01E+08 0.01 0 0.4 0.8 1.2 1.6 0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2603Y 12 1000 f=1.0MHz C iss I D = -4.2A -VGS , Gate to Source Voltage (V) 10 V DS = -16V 8 65m C (pF) 100 C oss C rss 6 4 2 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 0.2 1ms -ID (A) 1 0.1 0.1 0.05 PDM 0.01 10ms 100ms 0.1 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 156/W 0.01 Single Pulse T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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