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Power Transistors
2SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q q q
9.90.3
3.00.5
4.60.2 2.90.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 80 60 6 10 5 1 40 2.0 150 -55 to +150 Unit V V V A A A W C C
15.00.5
3.20.1
13.70.2 4.20.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
1
2
2.540.3 3 5.080.5
1:Base 2:Collector 3:Emitter TO-220D Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A IC = 4A, IB = 0.1A VCE = 12V, IC = 0.4A, f = 10MHz IC = 4A, IB1 = 0.08A, IB2 = - 0.08A, VCC = 50V 30 0.4 2.0 0.6 60 500 2000 0.3 V MHz s s s min typ max 100 100 Unit A A V
*h
FE
Rank classification
P Q
Rank hFE
800 to 2000 500 to 1200
1
Power Transistors
PC -- Ta
50
2SD2528
IC -- VCE
TC=25C 7
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10
Collector power dissipation PC (W)
Collector current IC (A)
40
(1)
(1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink
8
6 5 4 3 2 1mA 1 0 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA
1
30
10-1
20
10
(2) (3) (4)
10-2
0 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
10-3 10-1
1
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
102 104 IC/IB=50
hFE -- IC
300
fT -- IC
VCE=12V f=10MHz TC=25C 100
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10
103
Transition frequency fT (MHz)
10-1 1 10
1
30
102
10-1
10
10-2 10-1
1
10
10 10-2
3 0.003 0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=-IB2) VCC=50V TC=25C tstg 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 5 6 7 8 tf ton
Area of safe operation (ASO)
30 ICP t=1ms IC 3 1s 1 10ms
Switching time ton,tstg,tf (s)
10
Collector current IC (A)
10
0.3
0.1 Non repetitive pulse TC=25C 1 3 10 30 100
Collector current IC (A)
Collector to emitter voltage VCE (V)
2

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