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| Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.90.3 3.00.5 4.60.2 2.90.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 80 60 6 8 4 1 40 2.0 150 -55 to +150 Unit V V V A A A W C C 15.00.5 3.20.1 13.70.2 4.20.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.40.2 1.60.2 0.80.1 2.60.1 0.550.15 1 2 2.540.3 3 5.080.5 1:Base 2:Collector 3:Emitter TO-220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Storage time (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE fT tstg * Conditions VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.8A IC = 3A, IB = 0.075A VCE = 12V, IC = 0.3A, f = 10MHz IC = 3A, IB1 = 0.06A, IB2 = - 0.06A, VCC = 50V min typ max 100 100 100 Unit A A A V 60 500 2000 0.7 30 20 VCE(sat) V MHz s *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors IC -- VCE 1.6 TC=25C 1.4 4 5 2SD2527 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=40 VCE(sat) -- IC Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA Collector current IC (A) 1 3 10-1 2 10-2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10-3 10-2 10-1 1 10 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) Collector current IC (A) hFE -- IC 104 VCE=4V 300 fT -- IC 100 VCE=12V f=10MHz TC=25C 100 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=-IB2) VCC=50V TC=25C tstg 3 1 0.3 0.1 0.03 tf ton Forward current transfer ratio hFE Transition frequency fT (MHz) Switching time ton,tstg,tf (s) 10 103 30 102 10 10 10-2 10-1 1 10 3 0.003 0.01 0.03 0.01 0.1 0.3 1 3 0 2 4 6 8 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 30 Non repetitive pulse TC=25C ICP t=1ms IC 3 1s 10ms Collector current IC (A) 10 1 0.3 0.1 3 10 30 100 300 Collector to emitter voltage VCE (V) 2 |
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