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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE High Voltage: VCEO = 50 V. Epitaxial planar type. PNP complement: L2SA812 Pb-Free Package is available. L2SC1623*LT1 3 DEVICE MARKING AND ORDERING INFORMATION Device L2SC1623QLT1 L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G Marking L5 L5 (Pb-Free) L6 L6 (Pb-Free) L7 L7 (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 1 2 SOT- 23 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Symbol VCEO VCBO VEBO IC Value 50 60 7 150 Unit V V V mAdc THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA Tj ,Tstg o o Symbol PD Max Unit o 225 o mW mW/oC o 1.8 R JA 556 C/W PD 300 2.4 417 -55 to +150 o mW mW/oC C/W o C L2SC1623-1/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol I I Min Typ Max 0.1 0.1 Unit A A OFF CHARACTERISTICS Collector Cutoff Current (VCB=60V) Emitter Cutoff Current (VBE=5V) CBO EBO ON CHARACTERISTICS DC Current Gain (IC=1.0mA, VCE=6V) Collector-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base -Emitter On Voltage IC=1mA,VCE=6.0V) hFE V CE(sat) VBE(sat) V BE 120 - 0.15 0.86 0.62 560 0.3 1.0 0.65 V V V 0.55 SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE=6.0V,IE =1.0MHz) Output Capacitance(VCE = 6V, IE=0, f=1.0MHz) Ft Cob 250 3 MHz pF hFE Values are classified as followes NOTE: * hFE Q 120~270 R 180~390 S 270~560 L2SC1623-2/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 Fig.1 Grounded emitter propagation characteristics 50 Fig.2 Grounded emitter output characteristics( ) 100 0.50mA T A = 25C VCE= 6 V 20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) 80 10 50 T A = 100 C 25C 60 2 1 - 55C 40 0.5 20 0.2 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 0 0.4 0.8 1.2 1.6 2.0 V BE , BASE TO EMITTER VOLTAGE(V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) 10 Fig.4 DC current gain vs. collector current ( ) 500 I C, COLLECTOR CURRENT (mA) 8 6 h FE, DC CURRENT GAIN 0 4 8 12 16 20 200 100 4 50 2 20 0 10 0.2 0.5 1 2 5 10 20 50 100 200 V CE , COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.6 Collector-emitter saturation voltage vs. collector current 0.5 500 0.2 h FE, DC CURRENT GAIN 200 0.1 100 0.05 50 0.02 20 0.01 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) L2SC1623-3/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 0.5 Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) 20 f r , TRANSITION FREQUENCY(MHz) 500 10 200 5 100 2 50 -0.5 -1 -2 -5 -10 -20 -50 -100 1 0.2 0.5 1 2 5 10 20 50 I E, EMITTER CURRENT (mA) V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) Fig.11 Base-collector time constant vs.emitter current C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) 200 100 50 20 10 -0.2 -0.5 -1 -2 -5 -10 I E, EMITTER CURRENT (mA) L2SC1623-4/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SC1623-5/5 |
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