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| PD - 93947 IRF5850 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Top View VDSS = -20V RDS(on) = 0.135 Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5850 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -2.2 -1.8 -9.0 0.96 0.62 7.7 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 130 Units C/W www.irf.com 1 7/25/00 IRF5850 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.45 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.011 --- --- --- --- --- --- --- --- 3.6 0.66 0.83 8.3 14 31 28 320 56 40 Max. Units Conditions --- V V GS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.135 VGS = -4.5V, ID = -2.2A 0.220 VGS = -2.5V, ID = -1.9A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 5.4 ID = -2.2A --- nC VDS = -10V --- VGS = -4.5V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -15V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 23 7.7 -0.96 A -9.0 -1.2 35 12 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -0.96A, VGS = 0V TJ = 25C, I F = -0.96A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF5850 100 VGS -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V -1.5V BOTTOM -1.2V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V -1.5V BOTTOM -1.2V TOP 10 1 1 0.1 -1.2V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 -1.2V 0.1 0.1 1 20s PULSE WIDTH TJ = 150 C 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 TJ = 150 C R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C ID = -2.2A -I D , Drain-to-Source Current (A) 1.5 1 1.0 0.5 0.1 1.2 V DS = -15V 20s PULSE WIDTH 1.6 2.0 2.4 2.8 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5850 500 400 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = -2.2A VDS =-16V VDS =-10V 8 C, Capacitance (pF) Ciss 300 6 200 4 100 Coss Crss 2 0 1 10 100 0 0 2 4 6 8 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C -ID , Drain Current (A) I 10 100us 1 1ms 1 10ms TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5850 2.5 VDS 2.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 1.5 VGS 1.0 Pulse Width 1 s Duty Factor 0.1 % 0.5 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 VGS 10% TJ , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Junction Temperature 90% VDS Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t2 1 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF5850 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.24 0.40 0.20 0.30 VGS = -2.5V 0.20 0.16 0.12 ID = -2.2A VGS = -4.5V 0.10 0 2 4 6 8 10 -I D , Drain Current (A) 0.08 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5850 1.0 24 20 -V GS(th) , Variace ( V ) 0.8 16 Power (W) ID = -250A 12 0.6 8 4 0.4 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 T J , Temperature ( C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRF5850 TSOP-6 Package Outline TSOP-6 Part Marking Information 8 www.irf.com IRF5850 TSOP-6 Tape & Reel Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00 www.irf.com 9 |
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