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| HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: * PG = 21 dB min. at 8 W/30 MHz * IMD3 = -30 dBc max. at 8 W(PEP) * OmnigoldTM Metalization System .112x45 A B C E OC E B HI J MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T STG JC O O D 1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 13.5 OC/W O O O DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10601 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICBO hFE COB GP IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 UNITS V V V V mA --pF dB IC = 200 mA f = 1.0 MHz PIN = 1.0 W f = 150 MHz 5.0 --15 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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