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| DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. 5.5 MAX. (0.216 MAX.) PACKAFE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES * NF * Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 10 1.5 65 600 150 to +150 V V V mA mW C C 1.27 (0.05) 2.54 (0.1) 1 2 3 1. Base 2. Emitter 3. Collector EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre 50 100 8 0.4 2 MIN. TYP. MAX. 1.0 1.0 250 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA A A GHz 0.9 pF dB dB 2.5 dB VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IE = 7 mA, f = 1.0 GHz S21e MAG NF 9 11 13 1.2 hFE Classification Class Marking hFE K K 50 to 250 Document No. P10359EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan (c) 4.2 MAX. (0.165 MAX.) 14 MIN. (0.551 MIN.) 1984 2SC3582 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 PT-Total Power Dissipation-mW Free air Cre-Feed-back Capacitance-pF f = 1.0 MHz 2 1000 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1 0.7 0.5 0.3 0.2 500 0 50 100 150 0.1 1 TA-Ambient Temperature-C 2 3 5 7 10 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT 20 30 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 8 V 15 |S21e|2-Insertion Gain-dB 100 hFE-DC Current Gain 10 50 5 20 VCE = 8 V f = 1.0 GHz 10 0.5 1 5 10 50 0 0.5 1 5 10 50 70 IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT 30 VCE = 8 V fT-Gain Bandwidth Product-GHz 20 MAG-Maximum Available Gain-dB |S21e|2-Insetion Gain -dB 16 20 IC-Collector Current-mA INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 8 V IC = 20 mA MAG 10 7 5 3 2 12 |S21e|2 8 4 1 1 2 3 5 7 10 IC-Collector Current-mA 20 30 0 0.1 0.2 0.3 0.5 70. 1.0 f-Frequency-GHz 2.0 3.0 2 2SC3582 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 NF-Noise Figure-dB 5 4 3 2 1 0 0.5 VCE = 8 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.668 0.425 0.294 0.214 0.167 0.132 0.098 0.073 0.071 0.070 VCE = 8.0 V, IC = 20 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 45.8 61.5 73.2 79.4 79.5 79.8 75.2 72.0 63.7 60.6 S21 11.385 7.014 5.189 3.967 3.485 2.831 2.604 2.182 2.135 1.879 S21 128.9 103.7 88.6 75.4 64.7 57.0 48.5 39.1 31.0 21.6 S12 0.049 0.063 0.088 0.103 0.123 0.147 0.175 0.192 0.215 0.221 S12 83.5 76.3 68.5 64.5 60.8 55.9 50.7 47.9 44.2 38.0 S22 0.833 0.681 0.620 0.580 0.561 0.549 0.561 0.573 0.595 0.617 S22 26.9 31.1 36.0 40.8 46.3 53.4 60.3 69.1 71.8 78.0 S11 0.333 0.195 0.158 0.156 0.146 0.143 0.134 0.132 0.131 0.130 S11 51.4 49.2 44.3 41.0 35.8 30.7 25.8 22.3 20.0 17.8 S21 17.197 8.729 6.149 4.603 3.997 3.205 2.939 2.463 2.396 2.107 S21 107.7 89.7 78.8 68.7 60.4 54.1 46.7 38.1 30.7 22.1 S12 0.053 0.064 0.078 0.111 0.136 0.168 0.185 0.218 0.234 0.238 S12 97.5 90.1 80.3 70.0 64.2 58.1 53.2 47.3 41.3 36.5 S22 0.638 0.585 0.573 0.549 0.537 0.524 0.524 0.524 0.557 0.579 S22 29.7 31.8 35.0 38.2 42.4 57.1 55.4 62.0 68.5 74.8 3 2SC3582 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 8 V 200 MHz Step 8 0.0 2 0.4 0.9 1.0 0.8 1.2 9 0.0 1 0.4 0.10 0.40 110 0.7 0.11 0.39 100 0.12 0.38 0.13 0.37 90 0.14 0.36 80 0.15 0.35 70 1.4 0.1 6 0.3 4 0.6 0. THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C 0. 5 07 43 0. 0 13 1.6 12 0 6 00 1.8 0.1 0.3 7 3 0.2 0. 2.0 50 0. 18 32 19 0. 31 0. ( -Z-+-J-XTANCE CO ) MPO N T EN 0.4 0 0.2 0 0.3 40 O WAVELEN G 0 1. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 0.1 0.4 0.6 IC = 20 mA 0. 8 0 0.2 IC = 5 mA S11e ( 1. E NC TA X - AC -J -O RE --Z 0.3 0. 4 E IV AT 0. 5 2.0 0.6 1.8 1.6 0.7 0.8 1.4 0.9 1.2 1.0 S21e-FREQUENCY CONDITION 90 120 VCE = 8 V S12e-FREQUENCY 60 120 0.2 GHz 150 IC = 5 mA IC = 20 mA IC = 20 mA 30 150 IC = 5 mA S12e 180 0 0.2 GHz 4 8 12 16 0 180 20 S21e -150 -30 -150 -30 -120 -90 -60 -120 -90 4 4.0 0.2 GHz IC = 5 mA 1.4 GHz 3. 0 ) 10 S22e 0.2 GHz 5.0 20 IC = 20 mA 50 REACTANCE COMPONENT R ---- 0.2 ZO 1.4 GHz 20 ( ) 0. 32 0. 18 -5 0 3 0.3 7 0.1 -6 4 0.3 6 0.1 0 0.35 0.15 -70 0.36 0.14 -80 1.0 0.8 0.8 0.6 0.6 0.37 0.13 0.4 0.4 0.2 0.2 -90 0.38 0.12 0.39 0.11 -100 0.40 0.10 -11 0 0.4 1 0.0 9 -1 2 0.4 0.0 2 8 0 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 1.0 6.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0.2 10 0.1 20 50 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 0.2 8 0.2 2 -20 0 .29 0.2 1 0.3 -3 0.2 0 0 0 -4 0 0. 0. 31 19 CONDITION 90 VCE = 8 V 60 2.0 GHz 30 0.2 GHz 0 0 0.05 0.10 0.15 0.20 0.25 -60 2SC3582 [MEMO] 5 2SC3582 [MEMO] 6 2SC3582 [MEMO] 7 2SC3582 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 This datasheet has been download from: www..com Datasheets for electronics components. |
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