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STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
N-CHANNEL 550V@Tjmax - 0.20 - 20A - TO220/FP-DPAK-IPAK Zener-Protected SuperMESHTM MOSFET
General features
Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
s s s
Package
RDS(on) <0.25 <0.25 <0.25 <0.25 ID 20 20 20 20 A A A A
3 12
VDSS(@Tj
max)
550 550 550 550
V V V V
3 1 2
IPAK
TO-220
HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 1
1 3 2
DPAK
TO-220FP
s
Internal schematic diagram
Description
The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTMhorizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.
Applications
The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies
Order codes
Sales Type STB20NM50T4 STB20NM50-1 STP20NM505 STP20NM50FP Marking B20NM50 B20NM50-1 P20NM50 P20NM50FP Package DPAK IPAK TO-220 TO-220FP Packaging TAPE & REEL TUBE TUBE TUBE Rev 2 1/16
www.st.com 16
September 2005
1 Electrical ratings
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
1
Table 1.
Electrical ratings
Absolute maximum ratings
Parameter Value TO-220/DPAK/IPAK VGS ID ID Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor 20 12.6 80 192 1.2 15 --65 to 150 2000 30 20 (Note 3) 12.6 (Note 3) 80 (Note 3) 45 0.36 TO-220FP V A A A W W/C V/ns V C Unit
Symbol
IDM Note 2 PTOT
dv/dt Note 1 Peak Diode Recovery voltage slope VISO Tj Tstg Insulation Withstand Volatge (DC) Operating Junction Temperature Storage Temperature
Table 2.
Thermal data
TO-220/DPAK/IPAK TO-220FP 2.8 62.5 300 Unit C/W C/W C
Rthj-case Rthj-amb Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose
0.65
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj=25C, ID=5A, VDD= 50V) Max Value 10 650 Unit A mJ
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified)
Table 4.
Symbol V(BR)DSS IDSS
On/off states
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 250A, V GS= 0 VDS = Max Rating, VDS = Max Rating,Tc = 125C VGS = 30V VDS= VGS, ID = 250 A VGS= 10 V, ID= 10 A 3 4 0.20 Min. 500 1 10
100
Typ.
Max.
Unit V A A A V
IGSS VGS(th) RDS(on)
5 0.25
Table 5.
Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Rg Qg Qgs Qgd
Dynamic
Parameter Forward Transconductance Test Conditions VDS > ID(ON) xRDS(ON)max, ID = 10A Min. Typ. 10 1480 285 34 130 Max. Unit S pF pF pF pF
Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 400V f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain VDD=400V, ID = 20A VGS =10V (see Figure 15)
Gate Input Resistance
1.6
Total Gate Charge Gate-Source Charge Gate-Drain Charge
40 13 19
56
nC nC nC
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2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Table 6.
Symbol td(on) tr tr(Voff) tf tc
Switching times
Parameter Turn-on Delay Time Rise Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD=250 V, ID=10A, RG=4.7, VGS=10V (see Figure 16) VDD=400 V, ID=20A, RG=4.7, VGS=10V (see Figure 16) Min. Typ. 24 16 9 8.5 23 Max. Unit ns ns ns ns ns
Table 7.
Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=20A, V GS=0 ISD=20A, di/dt = 100A/s, VDD=100 V, Tj=25C 350 4.6 26 435 5.9 27 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns C A ns C A
ISD=20A, di/dt = 100A/s, VDD=100 V, Tj=150C
(1) ISD 20A, di/dt 400A/s, VDD V(BR)DSS , Tj TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300s, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
2.1
Electrical Characteristics (curves)
Safe Operating Area for TO-220/DPAK/IPAK Figure 2. Thermal Impedance for TO-220/DPAK/IPAK
Figure 1.
Figure 3.
Safe Operating Area for TO-220FP
Figure 4.
Thermal Impedance for TO-220FP
Figure 5.
Output Characteristics
Figure 6.
Transfer Characteristics
5/16
2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Figure 8. Static Drain-Source on Resistance
Figure 7.
Transconductance
Figure 9.
Gate Charge vs Gate -Source Voltage
Figure 11. Capacitance Variations
Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs vs Temperatute Temperature
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Figure 13. Source-drain Diode Forward Characteristics
2 Electrical characteristics
7/16
3 Test circuits
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
3
Test circuits
Figure 15. Gate Charge Test Circuit
Figure 14. Switching Times Test Circuit For Resistive Load
Figure 16. Test Circuit For Indictive Load Switching and Diode Recovery Times
Figure 18. Unclamped Inductive Load Test Circuit
Figure 17. Unclamped Inductive Waveform
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4 Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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4 Package mechanical data
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4 Package mechanical data
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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4 Package mechanical data
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4 Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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5 Packing mechanical data
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
5
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
6 Revision History
6
Revision History
Date 05-Sep-2005 Revision 2 Inserted Ecopack indication Changes
15/16
6 Revision History
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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