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PD - 91390B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51 ID 12A
IRH7450SE 500V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
TM (R)
International Rectifier's RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-204AE
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 12 7.0 48 151 1.2 20 500 12 15 4.2 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10 sec.) 11.5 (Typical)
g
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IRH7450SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
500 -- -- -- 2.5 3.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 0.51 0.57 4.5 -- 50 250 100 -100 140 35 75 35 60 75 60 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 7.0A VGS = 12V, ID = 12A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.0A VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 250V VDD = 250V, ID = 12A, VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2800 640 250
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12 48 1.6 500 9.6
Test Conditions
A
V nS C
Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ M a x Units
-- -- -- -- 0.83 0.12 -- -- 30
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Pre-Irradiation
IRH7450SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
100K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 400V, VGS=0V VGS = 12V, ID = 7.0A VGS = 0V, ID = 12A
Min
500 2.0 -- -- -- -- --
Max
-- 4.5 100 -100 50 0.51 1.6
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br Ni LET MeV/(mg/cm2)) 28 36.8 26.6 Energy (MeV) 285 305 265 Range 43 39 42 (m) 375 350 375 V DS (V) @VGS=0V @VGS=-5V @VGS=-10V@VGS=-15V @VGS=-20V 375 375 375 375 350 350 325 300 -- -- -- --
400 300 Cu VDS 200 100 0 0 -5 -10 VGS -15 -20 Br Ni
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRH7450SE
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
1
1
5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 C
3.0
ID = 12A
I D , Drain-to-Source Current (A)
2.5
TJ = 150 C
10
2.0
1.5
1
1.0
0.5
0.1 5 6 7 8
V DS = 50V 20s PULSE WIDTH 10 11 9 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRH7450SE
5000
VGS , Gate-to-Source Voltage (V)
4000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 12 A
16
VDS = 400V VDS = 250V VDS = 100V
C, Capacitance (pF)
Ciss
3000
12
2000
8
C oss C rss
1000
4
0 1 10 100
0 0 30 60
FOR TEST CIRCUIT SEE FIGURE 13
90 120 150
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
TJ = 150 C
10
OPERATION IN THIS AREA LIMITED BY R
DS(on)
I D , Drain Current (A)
100
10us
10
100us
1ms
1
TJ = 25 C
1
10ms
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRH7450SE
Pre-Irradiation
12
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
9
RG
-VDD
VGS
6
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRH7450SE
1200
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
1000
TOP BOTTOM ID 5.4A 7.6A 12A
VD S
L
D R IV E R
800
RG
D .U .T.
IA S tp
600
+ - VD D
A
VGS 20V
400
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRH7450SE
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 6.9 mH Peak IL = 12A, VGS = 12V ISD 12A, di/dt 400A/s, VDD 500V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions --TO-204AE (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/01
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