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PD - 94620B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* * * * * Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175C.
IRGIB7B60KD
C
VCES = 600V IC = 8.0A, TC=100C
G E
tsc > 10s, TJ=150C
n-channel
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
VCE(on) typ. = 1.8V
TO-220AB FullPak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VISOL VGE PD @ TC = 25C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 12 8.0
Units
V A
c
24 24 9.0 6.0 18 2500 20 39 20 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) W V
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t=1 min. Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
PD @ TC = 100C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS RJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 2.0
Max.
3.8 6.0 --- 62 ---
Units
C/W
g
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1
09/17/03
IRGIB7B60KD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM
Min. Typ. Max. Units
-- 0.57 1.8 2.2 2.3 4.5 -9.5 3.7 1.0 200 720 1.25 1.20 1.20 --
Conditions
Ref.Fig.
IGES
Collector-to-Emitter Breakdown Voltage 600 Temperature Coeff. of Breakdown Voltage -- -- Collector-to-Emitter Voltage -- -- Gate Threshold Voltage 3.5 Threshold Voltage temp. coefficient -- Forward Transconductance -- -- Zero Gate Voltage Collector Current -- -- Diode Forward Voltage Drop -- -- -- Gate-to-Emitter Leakage Current --
-- V VGE = 0V, IC = 500A -- V/C VGE = 0V, IC = 1mA (25C-150C) IC = 8.0A, VGE = 15V, TJ = 25C 2.2 2.5 V IC = 8.0A, VGE = 15V, TJ = 150C IC = 8.0A, VGE = 15V, TJ = 175C 2.5 5.5 V VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 1mA (25C-150C) -- S VCE = 50V, IC = 8.0A, PW = 80s VGE = 0V, VCE = 600V 150 500 A VGE = 0V, VCE = 600V, TJ = 150C VGE = 0V, VCE = 600V, TJ = 175C 1100 1.45 V IF = 5.0A, VGE = 0V IF = 5.0A, TJ = 150C, VGE = 0V 1.40 IF = 5.0A, TJ = 175C, VGE = 0V 1.30 100 nA VGE = 20V, VCE = 0V
5,6,7 9,10,11
9,10,11 12
8
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (Peak) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area
Min. Typ. Max. Units
-- 29 44 -- 3.7 5.6 -- 14 21 -- 160 268 -- 160 268 -- 320 433 -- 23 27 -- 22 26 -- 140 150 -- 32 42 -- 220 330 -- 270 381 -- 490 711 -- 22 27 -- 21 25 -- 180 198 -- 40 56 -- 7.5 -- -- 440 660 -- 38 57 -- 16 24 FULL SQUARE 10 -- -- -- -- -- -- 70 100 95 13 620 -- -- 133 120 17 800 nC
Conditions
IC = 8.0A VCC = 400V VGE = 15V IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 25C IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 25C
Ref.Fig.
23 CT1
CT4
J
d
ns
CT4
J
ns
IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 150C IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 150C
CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2
d
nH pF
s A J ns A nC
Measured 5mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150C, IC = 54A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50 TJ = 150C, Vp = 600V, RG = 100 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 8.0A, L = 1.07mH VGE = 15V, RG = 50 di/dt = 500A/S
22
4 CT2 CT3 WF4 WF4 17,18,19 20,21 CT4,WF3
Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge Note to are on page 12
2
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IRGIB7B60KD
14 12
50
40
10
6 4
Ptot (W)
0 20 40 60 80 100 120 140 160 180 T C (C)
IC (A)
8
30
20
10
2 0
0 0 20 40 60 80 100 120 140 160 180 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
100 s 10
10
IC (A)
1 10ms 0.1 DC
IC A)
1ms
1
0.01 1 10 100 VCE (V) 1000 10000
0 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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IRGIB7B60KD
40 35 30 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 40 35 30 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6
ICE (A)
20 15 10 5 0 0
1
2
3 VCE (V)
4
5
6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
40 35 30 25
ICE (A)
30 25 -40C 25C 150C
20 15 10
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
20
IF (A)
15 10 5
5 0 0 1 2 3 VCE (V) 4 5 6
0 0.0 0.5 1.0 VF (V) 1.5 2.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
4
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IRGIB7B60KD
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 4.0A ICE = 8.0A ICE = 16A ICE = 4.0A ICE = 8.0A ICE = 16A
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V)
100
80
ICE = 4.0A ICE = 8.0A ICE = 16A
10 8 6 4 2 0 5 10
ICE (A)
12
60
T J = 25C TJ = 150C
40 T J = 150C T J = 25C 0
20
15 VGE (V)
20
0
5
10 VGE (V)
15
20
Fig. 11 - Typical VCE vs. VGE TJ = 150C
Fig. 12 - Typ. Transfer Characteristics VCE = 360V; tp = 10s
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IRGIB7B60KD
600 500 400
Energy (J)
1000
300 200
EOFF
Swiching Time (ns)
tdOFF
100
tF tdON tR
EON 100 0 0 5 10 IC (A) 15 20
10 0 5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.1mH; VCE= 400V, RG= 50; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.1mH; VCE= 400V RG= 50; VGE= 15V
700 600 500
10000
EON
EOFF
Swiching Time (ns)
1000
Energy (J)
tdOFF
400 300 200 100 0 0 100 200 300 400 500
tdON
100
tF tR
10 0 100 200 300 400 500
RG ( )
RG ( )
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=1.1mH; VCE= 400V ICE= 8.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=1.1mH; VCE= 400V ICE= 8.0A; VGE= 15V
6
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IRGIB7B60KD
16 14 12 10
20 18
RG = 50 RG = 150
16 14
IRR (A)
8 6 4 2 0 0 5
IRR (A)
20
12 10 8 6 4 2 0
RG = 270
RG = 470
10
15
0
100
200
300
400
500
IF (A)
RG ()
Fig. 17 - Typical Diode IRR vs. IF TJ = 150C
Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 8.0A
16 14 12
1500 50 150 1000
Q RR (nC)
16A
10
270 470 8.0A
IRR (A)
8 6 4 2 0 0 100 200 300 400 500 600
500
4.0A
0 0 100 200 300 400 500 600 700
diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; IF= 8.0A; TJ = 150C
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C
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IRGIB7B60KD
250
200
470
270
Energy (J)
150
150 50
100
50
0 0 5 10 15 20
IF (A)
Fig. 21 - Typical Diode ERR vs. IF TJ = 150C
1000
Cies
16 14 300V
Coes
12 10 400V
Capacitance (pF)
100
VGE (V)
Cres
8 6 4 2
10
1 0 20 40 60 80 100
0 0 5 10 15 20 25 30
VCE (V)
Q G , Total Gate Charge (nC)
Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE ICE = 8.0A; L = 600H
8
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IRGIB7B60KD
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.01 0.02
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.367 0.425 1.070 1.928
i (sec)
0.000164 0.000652 0.081521 2.124500
0.1
Ci= i/Ri Ci i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-6 1E-5 1E-4 1E-3 1E-2
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-1 1E+0 1E+1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
Thermal Response ( Z thJC )
1
0.20 0.10 0.05
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
0.02 0.01
1
2
Ri (C/W) 2.530 1.354 2.114
i (sec) 0.001 0.068689 2.758
Ci= i/Ri Ci i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGIB7B60KD
L
L DUT
0
VCC
80 V
+ -
DUT
480V
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT
Driver
DC
L
360V
- 5V DUT / DRIVER
Rg
VCC
DUT
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB7B60KD
600 500 400 90% Ice 300 Vce (V) 5% Vce 200 5% Ice 100 Ice
100 4 5% Vce 0 Eon Loss -100 0.3 0.5 0.7 Time (uS) -4 0.9 0
12 tf Vce 8 6 Ice (A)
Vce (V)
600
24
10
500
tr
20 Vce Ice 16 90% Ice 10% Ice
400
300
12 Ice (A)
Ice (A)
4 2 0 Eof f Loss -2 -4 0 0.2 0.4 0.6 0.8 1 Time (uS)
200
8
0 -100 -200
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
100 QR R 0 tR R -100 -200 -300 -400 -500 -600 -0.15
Peak IRR 10% Peak IRR
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
400 80
15 10 5 0 IF (A)
Vce (V)
350
300
60
250
VF (V)
200
40
-5 -10
150
100
20
-15
50
-0.05
0.05 time (S)
0.15
-20 0.25
0 0.00
10.00
20.00
30.00
40.00
0 50.00
Time (uS)
Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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IRGIB7B60KD
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
Notes : T his part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB.
EXAMPLE: T HIS IS AN IRFI840G WIT H ASS EMBLY LOT CODE E401
Notes: T his part marking information applies to devices produced after 02/26/2001 in location other than GB.
EXAMPLE: T HIS IS AN IRFI840G WITH AS S EMBLY LOT CODE 3432 AS S EMBLED ON WW 24 1999 IN T HE AS S E MBLY LINE "K"
INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE
PART NUMBER
IRFI840G E 401 9245
INT ERNATIONAL RECT IF IER LOGO AS S EMBLY LOT CODE
PART NUMBER
IRFI840G 924K 34 32
DAT E CODE (YYWW) YY = YEAR WW = WEEK
DAT E CODE YEAR 9 = 1999 WEEK 24 LINE K
Notes: VCC = 80% (VCES), VGE = 15V, L = 100H, RG = 50. Energy losses include "tail" and diode reverse recovery. TO-220AB FullPak package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/03
12
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