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Equivalent circuit C Darlington 2SD2562 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=-2A VCB=10V, f=1MHz 2SD2562 100max 100max 150min 5000min 2.5max 3.0max 70typ 120typ V V MHz pF 16.2 B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2562 150 150 5 15 1 85(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio, Series Regulator and General Purpose (Ta=25C) Unit External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 A V 9.50.2 A 23.00.3 a b 1.75 2.15 1.05 5.450.1 1.5 4.4 +0.2 -0.1 3.3 0.8 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 10 IB2 (mA) -10 ton (s) 0.8typ tstg (s) 4.0typ tf (s) 1.2typ 5.450.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 15 VCE( sa t ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V) 3 IC - V BE Temperature Characteristics (Typical) 15 (V CE= 4V) 10mA 50mA 3mA 2m A 1.5 mA 1. 0m A Collector Current I C( A) 10 0.5mA 2 Collector Current I C (A) 0. 8m A 10 emp mp) IC=.15A IC=.10A 1 IC=.5A ) e Te eT Cas C ( I B= 0.3mA 5 25C 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 Base-Emittor Voltage V B E( V) -30C 125 (Cas 5 (Cas e Te mp) 2 3.0 2.2 Collector-Emitter Voltage V C E( V) Base Current I B( mA) (VCE=4V) 50000 DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E 50000 12 5C (VCE=4V) j- a( C/ W) hFE - IC Characteristics (Typical) hFE - I C Temperature Characteristics (Typical) j-a - t Characteristics 3.0 Typ 10000 5000 Transient Thermal Resistance 10000 5000 1.0 25 C 0.5 -30 C 1000 500 02 0.5 1 Collector Current I C( A) 5 10 15 1000 500 02 0.5 1 Collector Current I C( A) 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 fT - IE Characteristics (Typical) (V C E= 12V) 80 Safe Operating Area (Single Pulse) 100 P c - T a Derating Maxim um Power Dissipatio n P C( W) Cu t-off Fre quen cy f T( M H Z) 80 60 W ith In 60 fin ite 40 he at si nk 40 20 20 Without Heatsink 0 25 50 75 100 125 150 0 -0.02 -0.05 -01 -0.5 -1 -5 -10 3.5 0 Emitter Current I E( A) Ambient Temperature Ta(C) 160 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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