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| MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. PACKAGE STYLE MRA .25 DIM A B C D E F G H J K L MILLIMETERS MIN MAX 8.00 8.38 0.08 0.15 1.98 2.34 1.40 1.65 4.32 5.08 18.77 19.03 5.33 5.84 6.17 6.43 7.74 8.64 14.10 14.35 3.17 3.43 INCHES MIN O.351 0.003 0.078 0.055 0.170 0.739 0.210 0.243 0.210 0.555 0.125 MAX 0.330 0.006 0.092 0.065 0.200 0.749 0.230 0.253 0.240 0.565 0.135 MAXIMUM RATINGS IC VCES TJ TSTG JC O O 2.5 A (CONT) 50 V -65 C to +200 C -65 C to +150 C 4.0 C/W O O O 1 = Collector 2 = Emitter 3 = Base CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB c TC = 25 C O NONE TEST CONDITIONS IC = 100 mA IE = 1.25 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V Pout = 18 W IC = 500 mA f = 1.0 MHz f = 600 MHz & 1.0 GHz MINIMUM TYPICAL MAXIMUM UNITS 50 3.5 2.5 10 14 7.8 50 100 V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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